EXPERIMENT No-1

BJT CHARACTERISTICS
(COMMON EMITTER CONFIGURATION)
AIM: To study the input and output characteristics of a transistor in common emitter configuration.
EQUIPMENT REQUIRED:
S. No Description of item Range Qty
1 Regulated Power Supply 0-30V 1
0-1V 1
2 Voltmeter
0-30V 1
0-50V 1
3 Ammeter
0-100µA 1
4 Bread board ------- 1

COMPONENTS REQUIRED:
S. No Description of item Range Qty
1 Transistor BC 107 1
1KΩ 1
2 Resistor
100KΩ 1
CIRCUIT DIAGRAM:

0-30V

PIN ASSIGNMENT OF TRANSISTOR

THEORY:
A transistor is a three-terminal device. The terminals are emitter, base, collector. in
common emitter configuration, input voltage is applied between base and emitter terminals and
output is taken across the collector and emitter terminals. Therefore, the emitter terminal is
common to both input and output.
The input characteristics resemble that of a forward biased diode curve. This is expected
since the base-emitter junction of the transistor is forward biased. As compared to CB
arrangement IB increases less rapidly with VBE. Therefore, input resistance of CE circuit is higher
than that of CB circuit. The output characteristics are drawn between Ic and VCE at constant IB.
The collector current varies with VCE unto few volts only. After this the collector current
becomes almost constant, and independent of VCE. The value of VCE up to which the collector
current changes with VCE is known as knee voltage. The transistor always operated in the region
above knee voltage, Ic is always constant and is approximately equal to IB
The current amplification factor of CE configuration is given by β = ∆IC/∆IB
PROCEDURE:
INPUT CHARACTERISTICS
1. Make the connections as per circuit diagram figure.
2. Keep output voltage VCE = 0V by varying V CC.
3. Varying VBB gradually, note down both base current IB and base - emitter voltage (VBE).
4. Step Size is not fixed because of nonlinear curve and vary the X-axis variable (i.e if
output variation is more, decrease input step size and vice versa).
5. Repeat above procedure (step 3) for VCE =5V.
OUTPUT CHARACTERISTICS
1. Make the connections as per circuit diagram fig (2).
2. By varying VBB keep the base current IB = 20μA.
3. Varying VCC gradually, note down the readings of collector-current (IC) and collector-
emitter voltage (VCE).
4. Step Size is not fixed because of nonlinear curve and vary the X-axis variable (i.e if
output variation is more, decrease input step size and vice versa).
5. Repeat above procedure (step 3) for IB=40μA.
EXPECTED GRAPHS:
INPUT CHARACTERISTICS: OUTPUT CHARACTERISTICS:

IB
IC

IB3=40µA

IB2=20µ IB1=0
VBE VCE

OBSERVATIONS:

INPUT CHARACTERISTICS: OUT PUT CHARACTERISTICS

VCE(V)=0 VCE(V)=10
VBE(V) IB (µA) VBE(V) IB (µA)

IB (µA)=20 IB (µA)=50
VCE(V) IC (mA) VCE(V) IC (mA)
CALCULATIONS: -
Input impedance hie = ΔVBE/ΔIB at VCE = const. =
Output admittance hoe = ΔIC/ΔVCE at IB = const.=
Forward current gain hfe = ΔIC/ΔIB at VCE = const. =
Reverse voltage gain hre = ΔVBE/ΔVCE at IB = cont.=
Calculate in linear portion of the characteristics.
Compare the results with data sheets values.
PRECAUTIONS:

1. While doing the experiment do not exceed the ratings of the transistor. This may lead to
damage the transistor.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.

3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.
4. Make sure while selecting the emitter, base and collector terminals of the transistor.
RESULT:
Input impedance hib =

Output admittance hob =

Forward current gain hfb =
Reverse voltage gain hrb =

VIVA QUESITIONS

1) Why transistor is called current controlled device?

2) What is the significance of arrow head in the transistor symbol?
3) What are ‘emitter injection efficiency, and base transport factor ‘and how they influence
the transistor operation?
4) What are three regions of operation of a transistor?
5) Can a transistor be obtained by connecting two semiconductor diodes back to back?
6) How α and β are related to each other?
7) Indicate whether the β-value of a BJT increases or decreases with the increase in the
values of following parameters: i) base width ii) minority carrier life time in the base region iii)
temperature iv) collector current v) collector voltage
8) Why there is a maximum limit of collector supply voltage for a transistor?
9) Explain why ICEO>> ICBO?
10) Give reasons why common emitter (CE) configuration is widely used in amplifier circuits?
11) Why CE configuration preferred for cascaded amplifiers?
12) Why CC configuration is called a voltage buffer? what is the other name?