Primary Memory

Year of Maximum Bus Peak Volts Other Information

Introduction Clock Rate Width Bandwidth
I. RAM  Volatile (Temporary)
Random Access  Read and write operations
Memory  Processor access all memory directly
 Available in very small quantities of up to 1GB
A. DRAM 1968 3200MHz 64 bits 141.7GB/s 1.35V  Needs to be refreshed
Dynamic Random thousand times a second
Access Memory  Primary memory of most of
the personal computers is
made of DRAM
 Cheap
 Utilizes more power
 Sometimes loses data even
without power cut-off
1. SDRAM 1996 133MHz 64 bits 1.1 GB/s 3.3V  Synchronized with system
Synchronous clock
Dynamic Random  Wide number of pins
Access Memory  Faster than DRAMs
2. FPM DRAM 1990 25MHz 64 bits 200 MB/s 5V  It gives higher performance
Fast Page Mode than other DRAM types
Dynamic Random through focusing on fast
Access Memory page access
3. EDO DRAM 1994 40MHz 64 bits 320 MB/s 5V  It eliminated wait times by
Extended Data Out allowing a new cycle to start
Dynamic Random while retaining the data
Access Memory output buffer from the
previous cycle active, which
allows a degree pipelining
that improved performance
4. RDRAM 1998 400MHz 16 bits 800 MB/s 2.5V  Speeds of up to 800 MHz
Rambus Dynamic (x2)  It provides a very high data
Random Access transfer rate over a narrow
Memory CPU-memory bus
 Uses various speedup
mechanisms (synchronous
memory interface, caching
inside the DRAM chips and
very fast signal timing)
5. DDR SDRAM  It has the features of SDRAM but with twice the data transmission frequency
Double Data Rate  It transfers memory on both the rising edge and falling edge of a clock cycle
Synchronous  Its increased power efficiency makes it an ideal solution for laptops
Dynamic Random  It comes from different shapes and sizes, depending on the type of the computer
Access Memory
a. DDR1 SDRAM 2000 266MHz 64 bits 4.2 GB/s 2.5V  Also known as double
Double Data Rate (x2) pumped
Synchronous  Advance version of SDRAM
Dynamic Random  Developed by Samsung
Access Memory 1
b. DDR2 2003 533MHz 64 bits 8.5 GB/s 1.8V  Transfer data twice at the
(x2) same time
  Capable of transferring data
faster than DDR1
 Developed by Samsung
JEDEC
c. DDR3 2007 800MHz 64 bits 12.8 GB/s 1.5V  Transfer data twice at the
(x2) same time
 Capable of transferring data
faster than DDR2 and DDR1
 Developed by JEDEC
d. DDR4 2012 1600MHz 64 bits 25.6 GB/s 1.2V  Transfer data twice at the
(x2) same time with high
bandwidth
 Capable of transferring data
faster than DDR3, DDR2 and
DDR1
 Developed by JEDEC
e. DDR5 2020 3200MHz 64 bits 4.8-6.4 1.2V  It offers increased memory
GB/s density
 It maintains lower power
consumption
 Promises better error
checking over DDR4
B. SRAM 1963 133MHz 32 bits 18 GB/s 0.25 to  Does not need to be
Static Random 1.2V refreshed
Access Memory  Used in specialized
applications
 Expensive
 Utilizes more power
 Holds data until power is
turned off
II. ROM  Nonvolatile (Permanent)
Read Only Memory  Read only operation
 Can only be read by the processor, cannot be changed or deleted
 Data to be stored written during the manufacturing phase
 Slower and cheaper than RAM
PROM  Can be modified once by the
Programmable user
Read Only Memory  Can be programmed only
once and is not erasable
EPROM  User can write programs by
Erasable using special devices
Programmable  Data/Program can be
Read Only Memory removed from EPROM by
using ultraviolet rays
EEPROM  Programmed and erased
Electronically electronically
Erasable  Can be reprogrammed and
Programmable erased about ten thousand
Read Only Memory times
 Can be erased one byte at a
time rather than erasing the
entire chip
  Process of reprogramming is
flexible but slow

Fixed Storage
Hard Disk Drive (HDD)
Solid-state Drive (SSD)
Internal flash memory
Removable Storage
Pen Drive
Compact Disk Drive
Digital Versatile Disk Drive
Blu-Ray Disk
Floppy Disk
Memory Card
Secondary Memory
 Store and retrieve data
 Capacity of 250 GB to 16 TB
 Can be internal or external
 It consists of one or more circular disks called platters
 Its storage capacities are 128GB, 256GB, 512GB, 1TB and 2TB
 4TB is available on a few stand-alone SSD models while 8TB SSD storage
capacities can be found in high-end computers (Apple Mac Pro)
 The average speed of SSD is around 520 MB/s to 550 MB/s
 Life span up to 10 years and non-volatile storage chip that is widely used in
embedded systems
 It can keep stored data and information even when the power is off
 It can hit read speeds of around 1100 MB/s and write speeds of 975 MB/s
 Store and transfer data
 Capacity from 1 GB to 1 TB
 Very small in size and scratch resistant
 Non-volatile
 Also called as USB drive, key drive or flash memory
 Circular, flat piece of plastic
 Capacity up to 700 MB
 Can be easily carried from one place to another
Three types:
CD-ROM (Read only memory) Data cannot be changed.
CD-R (Recordable) Data can be recorded only once.
CD-RW (Rewritable) Read and written multiple times but needs to be installed.
 Looks like CD
 Uses red laser beam to read and write data
 Capacity from 4.7 GB to 17 GB
 Store high definition (HD) video and other multimedia files
 Can store up to 27-54 GB data
 Uses blue laser to read and write data on a disk
 Flexible disk with a magnetic coating on it
 Packaged inside a protective plastic envelop
 One of the oldest types of portable storage devices
 Can stored up to 1.44MB of data but now they are not used due to very little
memory storage
 Expand capacity of android devices, digital cameras and play stations
 Small in size
 Stores data up to 1 TB

Primary Memory
RAM
DRAM

SDRAM

FPM DRAM

EDO DRAM

RDRAM

DDR1 SDRAM

DDR2 SDRAM
DDR3 SDRAM

DDR4 SDRAM

DDR5 SDRAM

SRAM

ROM

PROM

EPROM

EEPROM

Secondary Memory
Hard Disk Drive (HDD)

Solid-state Drive (SSD)

Internal flash memory

Pen Drive

Compact Disk Drive

Digital Versatile Disk Drive
Blu-Ray Disk

Floppy Disk

Memory Card