Sec IV, L 8-11: Oxidation: MEL G611: Ic Fabrication Technology

06-09-2018
MEL G611 :
IC FABRICATION TECHNOLOGY
Section V: Lithography
Thu, 30 Aug; Sat, 1 Sept; Tue, 4 Sept;
BITS Pilani Thu, 6 Sept
Hyderabad Campus
Sanket Goel, EEE
Sec IV, L 8-11: Oxidation

• Sat, 18 Aug; Thu, 23 Aug; Sat, 25 Aug; Tues, 28 Aug;
• Learning Objectives
o To understand the Oxidation process during the IC
Fabrication
• Topics covered –
o Oxidation growth mechanisms
o Various techniques
o Properties
o Defects
MEL G611 : IC FABRICATION TECHNOLOGY 2 BITS Pilani, Hyderabad Campus
1
06-09-2018
Sec V, L 12-14: Lithography

• Thu, 30 Aug; Sat, 1 Sept; Tue, 4 Sept; Thu, 6 Sept
o Learn how to print the patterns on the wafer using
optical exposure systems
• Topics to be covered –
o Optical Lithography
o Electron Lithography
o X-ray Lithography
o Ion Lithography
Lithography
• Litho ⇒ Stone
• Graphy ⇒ Writing
Photolithography: Need photoresist, Mask, and UV light; allowed for >

0.1 µm technology node
e-beam lithography: Need e-beam and e-beam resist; No mask ; sub

10 nm or smaller dimension technology node
X-ray lithography: Same as optical lithography, but instead of UV used

X-ray beam; wavelength is very small, less than 1 nm!!
Ion-beam lithography: scanning a focused beam of ions in a patterned

fashion across a surface to create very small structures such as IC or
other nanostructures.
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06-09-2018
Lithography Requirements
BITS Pilani
Hyderabad Campus
Photolithography
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06-09-2018
Photolithography
• Photo ⇒ Light
• Litho ⇒ Stone
• Graphy ⇒ Writing
• A light sensitive photoresist is spun onto the wafer and coat the
silicon wafer
• The resistive is selectively exposed by shining light through a
mask
• Then developed the mask pattern, and Finally, etched
out the selectively area
Photolithography
• Creation of 3D structures using photographic techniques
• Derived from creation of printing plates
• Usually start with thin film on wafer (eg SiO2)
• Coat with photosensitive material (photoresist)
• Exposure: to UV Light through mask of structure
• Development of resist: leaves pattern of resist with openings
• Etching: removes film unprotected by resist
• Striping Resist: leave only patterned film
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Photolithography (1)
Photolithography (2)
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Photolithography - Process
Design ⇒ Mask ⇒ Wafer
Photolithography - Components
• Mask
• Photoresist
• Exposure System
• Chemicals
• Thickness control
• Temperature control
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06-09-2018
Photomask
• An opaque plate with
holes or transparencies
that allow light to shine
through in a defined
pattern.
• Plate  quartz glass
• Black lines on glass 
chrome
• Design is created and
transferred using a
pattern generator
Photomask (Cost)
Low Reflective Chrome (info) on Print Grade Soda Lime (S/L) Glass or
Quartz (spec's)
http://www.photoplotstore.com/pages/photomasks.html
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06-09-2018
Photolithography - Mask
• Light field Mask: "islands" of lines in
clear field
• Dark field Mask: "holes" in mostly dark
area
Mask
• Type of resist determines mask type
polarity
Photomasking
Mask & Photomasking Polarity result

Photolithography - Resist
Feature Positive Negative
Design on Mask Same as Mask Opposite to Mask
Resist after exposure Stays Goes
Shows/goes rule Goes Doesn’t go
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06-09-2018
• Positive: Exposure to UV light removes resist
• Negative: Exposure to UV light maintains resist
Mask
Positive Resist Negative Resist

Characteristic Positive Negative

Adhesion to Silicon Fair Excellent
Relative Cost More Expensive Less Expensive
Developer Base Aqueous Organic
Minimum Feature 0.5 μm and below ± 2 μm
Step Coverage Better Lower
Wet Chemical
Fair Excellent
Resistance
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06-09-2018
Relative Advantages of Resist

type
• Positive resists used in almost all processes now
• Positive resist has much higher resolution
• Resist is constantly changing: altered to fit the wavelength used
• Negative resists only used in specialized processes
Lithography Steps
• Wafer clean
• Pre-bake and primer coating
• Photoresist spin coating PR coating
Track- • Soft bake
stepper • Alignment and exposure
integrate • Post exposure bake
d system • Development
• Hard bake Development
• Pattern inspection
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06-09-2018
Lithography : Relative
Thickness
• Thickness function of resist type, viscosity, spin

speed
• Viscosity controlled by fraction of solids in resist
• Higher spin speed more centripetal force vs gravity
• Higher viscosity harder to throw off resist
Lithography : Prebake &

Primer
Prebake
• Dehydration bake at ~1000C
• Remove moisture from wafer surface
• Promote adhesion between PR and surface
• Integration wit primer coating
Primer
• Promotes adhesion of PR to wafer surface
• Widely used: Hexamethyldisilazane (HMDS)
• HMDS vapor coating prior to PR spin coating
• Usually performed in-situ with pre-bake
• Chill plate to cool down wafer before PR coating
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06-09-2018
Litho: Wafer Cooling & Coating

• Wafer needs to cool down
• Water-cooled chill plate
• Temperature can affect PR viscosity  Affect PR spin
coating thickness
Primer
• Undoped-
Silicate-
Glass-(USG) Photoresist
• STI – Shallow
Trench Polysilicon
Isolation STI USG
P-Well
Litho: Spin Coating -

background
• Wafer sit on a vacuum chuck
• Slow spin ~ 500 rpm
• Liquid photoresist applied at center of wafer
• Ramp up to ~ 3000 - 7000 rpm
• Photoresist spread by centrifugal force
• Evenly coat on wafer surface
Automated Spin Coater
• Wafer Coater/Developers cost
$0.3-1 Million
• Same wafer track design used for
coat or development
• Problem – if not used often resist
lines clog
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06-09-2018
Litho: Spin Coating
Photoresist Applying
PR dispenser
nozzle
Wafer
Chuck
Spindle
To vacuum pump
Litho: Spin Coating
Photoresist Suck Back
PR dispenser nozzle
PR suck back
Wafer
Chuck
Spindle
To vacuum pump
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06-09-2018
Litho: Spin Coating
Photoresist Spin Coating
PR dispenser
nozzle
PR suck back
Wafer
Chuck
Spindle
To vacuum pump
Litho: Spin Coating
PR dispenser
nozzle
PR suck back
Wafer
Chuck
Spindle
To vacuum pump
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06-09-2018
Litho: Spin Coating
PR dispenser
nozzle
PR suck back
Wafer
Chuck
Spindle
To vacuum pump
Litho: Spin Coating
PR dispenser
nozzle
PR suck back
Wafer
Chuck
Spindle
To vacuum pump
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06-09-2018
Litho: Spin Coating
PR dispenser
nozzle
PR suck back
Wafer
Chuck
Spindle
To vacuum pump
Litho: Spin Coating
PR dispenser
nozzle
PR suck back
Wafer
Chuck
Spindle
To vacuum pump
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06-09-2018
Litho: Spin Coating

PR dispenser
nozzle
PR suck back
Wafer
Chuck
Spindle
To vacuum pump
Litho: Spin Coating
PR dispenser
nozzle
PR suck back
Wafer
Chuck
Spindle
To vacuum pump
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06-09-2018
Litho: Spin Coating
PR dispenser
nozzle
PR suck back
Wafer
Chuck
Spindle
To vacuum pump
Litho: Soft bake
Ready For Soft Bake
Wafer
Chuck
Spindle
To vacuum
pump
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06-09-2018
Litho: Analysis
Relationship of PhotoresistThickness to Spin Rate and Viscosity
3.5
100 cst
3.0
50 cst
2.5
Thickness (mm)
2.0
27 cst
20 cst
1.5
1.0 10 cst
5 cst
0.5
0
2k 3k 4k 5k 6k 7k
Spin Rate (rpm)
Litho: Exposure
Viscosity
• Fluids stick on the solid surface

• Affect PR thickness in spin coating
• Related to PR type and temperature
• Need high spin rate for uniform coating
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06-09-2018
Litho: Exposure
• Need to cool down to ambient temperature
• For 8 inch (200 mm) wafer, 1 C change causes 0.5 mm
difference in diameter
• Wafers exposed within 2-3 days of soft bake otherwise strip and
recoat
• Several exposure systems: simplest mask aligner
• Wafers placed in mask aligner, moved under mask
• Mask very close to resist (possibly in contact with resist)
• Contact may cause resist to stick to mask  mask needs to be
cleaned
• But separation needs to be close otherwise shadow spreads
• Exposure to UV: mask blocks light to desired areas
Diffraction
Place wave in
free space Light passing through Place wave through
a narrow aperture an aperture
Diameter of
central maximum
Image intensity of circular aperture Small aperture being imaged

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06-09-2018
Diffraction
Image intensity of circular aperture Small aperture being imaged
Two types of Diffractions:

1. Fraunhofer Diffraction: far-field diffraction
2. Fresnel Diffraction: near field diffraction
Methods of Wafer Exposure
Provides high resolution and low

Capable of high Cannot easily
defect densities and dominates today.
resolution but has print features
Typical projection systems use
unacceptable defect below a few
reduction optics (2X - 5X), step and
densities. µm
repeat or step and scan mechanical
systems, print ≈ 50 wafers/hour and
cost $5 - 10M
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06-09-2018
Fraunhofer Diffraction
Resolution
0.6 < K1 < 0.8
Depth of Focus
k2 depends on resist
Problem
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Fresnel Diffraction
W  mask feature size
Minimum resolvable
feature size
• A proximity exposure system operating with 10 µm gap and a

365 nm light source can resolve features < 2 µm
• Much smaller than used in IC chips
• These systems are not useful for manufacturing these chips
• However much less expensive than projection system
• For applications where feature size are compatible with them,
proximity printers are an economical solution
Litho: UV Source
• Current aligner UV source mercury
vapour lamp
• Exposure time set by light intensity, resist
type and thickness, reflectivity of layer
below
• 436 nm ("g-line")
• 405 nm ("h-line")
• 365 nm ("i-line")
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06-09-2018
Litho: Exposure
Gate Mask
Photoresist
Polysilicon
STI USG
P-Well
Litho: Exposure
Gate Mask
Photoresist
Polysilicon
STI USG
P-Well
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06-09-2018
Litho: Exposure
Ready for Post Exposure Bake
Photoresist
Polysilicon
STI USG
P-Well
Litho: Exposure (caution)

Alignment of Layers
• Must get new mask aligned with devices
on after
• Use two objectives with large separation
• Structures aligned in both fields
• This prevents rotational errors
Alignment marks on the mask

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06-09-2018
Resist Type
Contrast Q0  dose when exposure begins
Qf  dose when exposure ends
Problem
To be developed properly, a 10 mm photoresist requires an
energy density of 100 mJ/cm2/ mm. If a UV source provides
a power density of 1000 W/m2, how long do you need to
expose the wafer with this photoresist?
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06-09-2018
Litho: Post Exposure Bake

• PEB normally uses hot plate at 110 to 130 C for about
1 minute.
• For the same kind of PR, PEB usually requires a higher
temperature than soft bake.
• Insufficient PEB will not completely eliminate the
standing wave pattern,
• Over-baking will cause polymerization and affects
photoresist development
Litho: Post Exposure Bake
Purpose of Post Exposure Bake
• Baking temperature higher than the Photoresist glass

transition temperature Tg
• Thermal movement of photoresist molecules
• Rearrangement of the overexposed and underexposed
PR molecules
• Average out standing wave effect,
• Smooth PR sidewall and improve resolution
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06-09-2018
Litho: Development
PR
Polysilicon
STI USG
P-Well
Litho: Development
Development: Immersion
Develop Rinse Spin Dry
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06-09-2018
Litho: Development
Applying Development Solution
Exposed Development solution

Photoresist dispenser nozzle
Wafer
Chuck
Spindle
To vacuum
pump
Litho: Development
Applying Development Solution
Exposed
Photoresist
Wafer
Chuck
Spindle
To vacuum
pump
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06-09-2018
Litho: Development
Developer Spin Off
Edge PR Patterned
removed photoresist
Wafer
Chuck
Spindle
To vacuum
pump
Litho: Development
DI Water Rinse
DI water
dispenser
nozzle
Wafer
Chuck
Spindle
To vacuum
pump
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06-09-2018
Litho: Development
Spin Dry
Wafer
Chuck
Spindle
To vacuum
pump
Litho: Development
Ready For Hard Bake
Wafer
Chuck
Spindle
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06-09-2018
Litho: Development
Mask
PR PR
Film Film
Substrate Substrate
PR Coating Exposure
PR PR
Film Film
Substrate Substrate
Etching Development
Litho: Development
PR PR
Substrate Substrate
Normal Incomplete
Development Development
PR PR
Substrate Substrate
Under Development Over Development
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06-09-2018
Litho: Hard Bake
• Evaporating all solvents in PR

• Improving etch and implantation resistance
• Improve PR adhesion with surface
• Polymerize and stabilize photoresist
• PR flow to fill pinhole
PR
Polysilicon
STI USG
P-Well
Wafer Inspection
• Surface irregularities - scratches, pin
holes, stains, contamination, etc.
• Critical dimension (CD)
• Overlay or alignment
– run-out, run-in, reticle rotation, wafer
rotation, misplacement in X-direction,
and misplacement in Y-direction
•Fail inspection, stripped PR and
rework
- Photoresist pattern is temporary
-Etch or ion implantation pattern is
permanent.
• Scanning electron microscope (SEM)
• Optical microscope
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06-09-2018
BITS Pilani
Hyderabad Campus
Direct Laser Writing
Direct Writing
• Direct writing with a narrow beam of charged particles or
photons uses a “software” mask or Grey-tone mask
• Software-based techniques
o Laser lithography
o Greyscale Lithography
o Electron-beam (e-beam) lithography
• E-beam lithography  electron dosage is given by the
product of current and dwell time and is varied across the
resist surface.
• Laser lithography --> pixel-by-pixel UV-laser scanning to
fabricate spherical and aspherical lenses in a positive
photoresist
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06-09-2018
Laser Writing – Basics

-Norland Optical Adhesive (NOA)
- Refractive index ~1.5
- Used as –ve PR
- Can be cured by UV
- A He-Cd UV laser (325 nm from LiCONIX) is used to write

microchannel walls in spun-on NOA on glass substrates.
- The uncured adhesive is washed away
Laser Writing – Schematic
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06-09-2018
Laser Writing – Calculations
If the total energy required to cure NOA is 4.5 joule/cm2 then,
‘W’ is the laser output power

‘D’ is the diameter of laser spot
‘v’ motor speed
For a spot size of 0.1 mm and output power of 0.1 mW, the
motor speed is approximately 0.1 mm/sec.
Laser Writing – Program
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06-09-2018
Laser Writing – Device
100
mm
Laser-written channel master using Norland optical adhesive

Width = 150 µm, Depth = 60 µm

73
Laser Writing – Device (ii)
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06-09-2018
Laser Writing – Device app
• NOA (index of refraction =1.58) works as waveguide core and

walls for the microchannel.
• The chip can be capped by thin microscopic slide –cover
Example- SU8 Biochip (Concept)
Microchannel
Output
Waveguide
Input waveguide
with air cladding
• Grooves in SU-8 (refractive index = 1.59) define air claddings

for waveguides and microchannels for fluids (left)
• Structure is capped with PDMS
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06-09-2018
Example- SU8 Biochip (Concept)
Microchannel
Output
Waveguide
Input waveguide
with air cladding
• Grooves in SU-8 (refractive index = 1.59) define air claddings

for waveguides and microchannels for fluids (left)
• Structure is capped with PDMS

SU8 Biochip (Fabrication)
UV
Mask
SU-8
Glass Substrate
Glass Substrate
• Spin-coat 50 mm of SU-8 on glass substrates and pre-bake

• Pattern using standard lithography
• UV-exposed SU-8 is cross-linked, unexposed part is developed
away
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06-09-2018
Y-shaped and T-shaped

microchannel –
For detecting and separating
different particle types
Split waveguides-
For combining light of different
wavelengths for particle
sorting experiments
Chip C-
To observe continuous
Electroosmotic flow.

Split waveguides-
For combining light of different wavelengths for particle sorting
experiments
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06-09-2018
SU8 Biochip- Optical Microscope

Split waveguides for combining light of different wavelengths for
particle sorting experiments.
Different points in the microchannel
SU8 Biochip- App
PMT 1
Laser
PMT 2
Flow by pressure-driven flow
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06-09-2018
SU8 Biochip- App

300 mm
Video showing the flowing microparticles at one waveguide-

microchannel intersection
Flow by pressure-driven flow
SU8 Biochip- App

Labview screenshot showing 6 microparticles passing by the
intersection
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06-09-2018
SU8 Biochip- App
3500
3000
Time
k
2500 Peak between Vel

Particle number # peaks (s) (mm/s)
2000
PMT Signal (mV)
1 2 3 4 5 6
1 1.43 209.79
1500
2 1.2 250.00
1000
500
3 1.37 218.98
0
4 1.74 172.41
68 73 78 83 88 93 98
Time (sec) 5 1.78 168.54
6 1.75 171.43
BITS Pilani
Hyderabad Campus
Grayscale Lithography
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06-09-2018
• Normal photolithography 
o a binary image transfer process
o developed pattern consists of regions with resist (1) and
regions without resist (0).
• Grayscale lithography 
o partial exposure of a photoresist renders it soluble to a
developer in proportion to the local exposure dose
o consequence, after development, the resist exhibits a
surface relief.
• Gray-tone masks (GTMs) (physical / software based) 
o lets varying amounts of light pass through
o micromachines with varying topography
Conventional vs Grayscale
Lithography
Normal mask Grayscale
• Low exposure dose  mask
cross-linking acid in the
regions closer to the light
source.
• Stronger exposure doses
 penetrate further and
induce cross-linking in the
photoresist further away
from the light source.
• Partial exposure  renders it soluble to a developer in
proportion to the local exposure dose and as a consequence,
after development, the resist exhibits a surface relief or 3D
topography
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06-09-2018
Conventional vs Grayscale
Lithography Same Mask is used
• Smart filter with a
several micro-mirrors
contained in a
rectangular array, to
render patterns from
software masks.
• Micro-mirror corresponds to a pixel of image to be transferred to substrate

and is individually addressable
• Micro-mirror ON position can reflect light coming from the light source onto
the photoresist and transfers a bright pixel.
• Micro-mirror in the OFF position directs the light elsewhere and a dark pixel
is seen by the photoresist.
• Grayscale images are obtained by toggling the mirrors between ON and
OFF states rapidly (typically 20 μs) and the ratio of ON time to OFF time
determines the shade produced.
45
06-09-2018
GSL – Software Mask Design

• Design  any graphics drawing software including MS Paint
• Check pixel  ? area on PR
• Exposure light intensity  RGB code of the color
• Grayscale is implemented (set RGB between 0 and 255)
o Higher RGB  lighter shade (closer to white)
o Lower RGB  darker shade (closer to black)
• Software mask design assigns proper grayscale values to the
appropriate regions of the image based on PR type (+/-)
• For –ve PR (SU-8)
o Regions where less thickness is required were assigned a
lower grayscale value, i.e., a dark shade
o Regions of high thickness were assigned a high grayscale
value, i.e., a lighter shade.
GSL – Processes
1. Substrates and spin coating

2. Soft baking and post exposure baking
3. Exposure
4. Developing
5. Pattern characterization
6. characterization
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06-09-2018
GSL – Characterization
• Power density increases proportional to the RGB value.

• Pattern height is expected to increase with the RGB grayscale
value.
GSL – Characterization
• SU-8 structure is characterized using optical profilometry as

well as SEM.
• Structure is also symmetrical on both the x- and y-axis as
shown in
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06-09-2018
GSL – Characterization:
Exposure Time
400 s exposure
time 800 s exposure
time
• Exposure time increases

o Sufficient exposure energy to
polymerize the SU-8 film even at 1200 s
low RGB value areas (dark exposure
shades). time
o Sharp needles to cones to
truncated to mesas.
GSL – Application: Bridges and

Cantilevers
• Suspended bridges
at different grayscale
values from 130 (A)
to 230 (D).
• Cantilevers of
different lengths at
grayscale 130 and 15
μm width and
• Cantilevers of
different lengths at
grayscale 130 and 45
μm width.
48
06-09-2018
GSL – Application: Micromixers
Two ports Embedded Embedded

connected by a microchannel with microchannel with
microchannel alternating obstructions
alternating ridges
Mask used
SEM images
BITS Pilani
Hyderabad Campus
Electron Beam Lithography (EBL)
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06-09-2018
EBL: Introduction
• Conventional Photolithography is limited by the wavelength of light
E  1/
• Higher E can cause unwanted side effects
• Solution?
• Use electrons instead of light
• E-beam lithography
• Used for making mask and reticles

• Smallest geometry achieved: 14 nm
• Direct print possible, no mask is required
– Low throughput
• Scattering exposure system (SCALPEL) looks promising
– Tool development
– Reticle making
– Resist development
EBL: Mechanism
To “shoot” a beam of electrons in a
Electron Gun
direction
•The emitter is heated to produce and
excite electrons on the surface.
Lens • When a high voltage is applied, the
excited electrons accelerate towards a
Blanking Plate structure called the anode.
•By varying this voltage, the trajectory
Lens and the focus of the beam can be
manipulated
Stigmator
Optics  to focus the electrons into a
concentrated beam in a desired direction.
Deflection
•Two parallel plates inside the column
Coils
Lens can be electrostatically charged to a
precise degree
•The resulting electric field is able to bend
Wafer
the beam in a desired direction.
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06-09-2018
EBL: Methods
When the beam hits the surface,
either an additive or subtractive
reaction takes place.
Additive writing method
uses the electrons to induce a
deposition of a compound on the
surface.
Subtractive writing method
• uses the e-beam to remove the
sections of the resist and surface.
• common in creating masks for
other lithographic techniques
EBL: Scanning
Raster Scan: The e-beam is swept across entire
surface, pixel by pixel, with the beam being
turned on and off according to desired pattern.
• Easy to design and calibrate
• Time consuming [because the beam is scanned
across the entire surface]
Vector Scan: The e-beam “jumps” from one

patterned area to the next, skipping unwanted
areas.
• Much faster
• Beam adjustments easy
• It takes longer for the beam to settle  more
difficult to maintain accurate placing for the
beam.
51
06-09-2018
EBL” Challenges
Electron Backscattering
- Direct electron bombardment on the surface Quick scattering
- Unwanted reactions outside of the focused e-beam
- E-beam resolution is not limited to only the size of the beam
Proximity Effect
- Focused e-beam can produce Secondary electrons (SEs)
- SEs expose the resist several mms away from exposure point
- Critical variations on surfaces on the sub-micron level
Efficiency
- Complex and expensive equipments Not feasible on mass
production
- Slow exposure time
- Need to perform in vacuum (e- are charged particle)
- Scanning may avoid this, still…
EBL: Few Patterns
20 nm phase
change bridge
5 nm lines waveguides
52
06-09-2018
BITS Pilani
Hyderabad Campus
X-ray and Ion Lithography
X-ray Lithography: Introduction

• Used to selectively remove parts of a thin film by X-rays to
transfer a geometric pattern from a mask to a photoresist
• A series of chemical treatments then engraves the produced
pattern into the material underneath the photoresist.
• As  < 1 nm), X-rays overcome

the diffraction limits of optical
lithography, allowing smaller
feature sizes.
• Mask pattern is written by direct-
write EBL onto a resist that is
developed by conventional
semiconductor processes.
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06-09-2018
Ion-beam Lithography
• Scanning a focused beam of ions in a patterned fashion
• Higher resolution patterning than UV, X-ray, or electron beam
lithography as heavier ions have more momentum.
• Smaller wavelength than even an e-beam and therefore
almost no diffraction (ions move in straight line)
• Momentum reduces scattering in target and any residual gas.
• Reduced potential radiation effect to sensitive underlying
structures compared to x-ray and e-beam lithography.
• Secondary particles have very short range, because of the
lower speed of the ions.
• Fast-moving ions interact differently with matter than electrons
do, and, due to their higher momentum, their optical properties
are different.
Sec V, L 12-14: Lithography

• Thu, 30 Aug; Sat, 1 Sept; Tue, 4 Sept; Thu, 6 Sept
o Learn how to print the patterns on the wafer using
optical exposure systems
o Optical Lithography
o Electron Lithography
o X-ray Lithography
o Ion Lithography
54
06-09-2018
Sec VI, L 16-17: Etching

• Sat, 8 Sept; Tue, 11 Sept
o Learn different etching techniques involved in device
fabrication
o Wet Etching
o Dry Etching
55

Sec IV, L 8-11: Oxidation: MEL G611: Ic Fabrication Technology

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06-09-2018

Sec IV, L 8-11: Oxidation

MEL G611 : IC FABRICATION TECHNOLOGY 2 BITS Pilani, Hyderabad Campus

Sec V, L 12-14: Lithography

MEL G611 : IC FABRICATION TECHNOLOGY 3 BITS Pilani, Hyderabad Campus

Photolithography: Need photoresist, Mask, and UV light; allowed for >

e-beam lithography: Need e-beam and e-beam resist; No mask ; sub

X-ray lithography: Same as optical lithography, but instead of UV used

Ion-beam lithography: scanning a focused beam of ions in a patterned

MEL G611 : IC FABRICATION TECHNOLOGY 5 BITS Pilani, Hyderabad Campus

MEL G611 : IC FABRICATION TECHNOLOGY 7 BITS Pilani, Hyderabad Campus

MEL G611 : IC FABRICATION TECHNOLOGY 8 BITS Pilani, Hyderabad Campus

MEL G611 : IC FABRICATION TECHNOLOGY 9 BITS Pilani, Hyderabad Campus

MEL G611 : IC FABRICATION TECHNOLOGY 10 BITS Pilani, Hyderabad Campus

MEL G611 : IC FABRICATION TECHNOLOGY 11 BITS Pilani, Hyderabad Campus

MEL G611 : IC FABRICATION TECHNOLOGY 12 BITS Pilani, Hyderabad Campus

MEL G611 : IC FABRICATION TECHNOLOGY 13 BITS Pilani, Hyderabad Campus

MEL G611 : IC FABRICATION TECHNOLOGY 14 BITS Pilani, Hyderabad Campus

Mask & Photomasking Polarity result

Resist after exposure Stays Goes

Shows/goes rule Goes Doesn’t go

MEL G611 : IC FABRICATION TECHNOLOGY 16 BITS Pilani, Hyderabad Campus

Positive Resist Negative Resist

Characteristic Positive Negative

MEL G611 : IC FABRICATION TECHNOLOGY 18 BITS Pilani, Hyderabad Campus

Relative Advantages of Resist

MEL G611 : IC FABRICATION TECHNOLOGY 19 BITS Pilani, Hyderabad Campus

MEL G611 : IC FABRICATION TECHNOLOGY 20 BITS Pilani, Hyderabad Campus

• Thickness function of resist type, viscosity, spin

MEL G611 : IC FABRICATION TECHNOLOGY 21 BITS Pilani, Hyderabad Campus

Lithography : Prebake &

Litho: Wafer Cooling & Coating

Litho: Spin Coating -

Litho: Spin Coating

MEL G611 : IC FABRICATION TECHNOLOGY 25 BITS Pilani, Hyderabad Campus

Litho: Spin Coating

Photoresist Suck Back

MEL G611 : IC FABRICATION TECHNOLOGY 26 BITS Pilani, Hyderabad Campus

Litho: Spin Coating

Photoresist Spin Coating

MEL G611 : IC FABRICATION TECHNOLOGY 27 BITS Pilani, Hyderabad Campus

Litho: Spin Coating

Photoresist Spin Coating

MEL G611 : IC FABRICATION TECHNOLOGY 28 BITS Pilani, Hyderabad Campus

Litho: Spin Coating

Photoresist Spin Coating

MEL G611 : IC FABRICATION TECHNOLOGY 29 BITS Pilani, Hyderabad Campus

Litho: Spin Coating

Photoresist Spin Coating

MEL G611 : IC FABRICATION TECHNOLOGY 30 BITS Pilani, Hyderabad Campus

Litho: Spin Coating

Photoresist Spin Coating

MEL G611 : IC FABRICATION TECHNOLOGY 31 BITS Pilani, Hyderabad Campus

Litho: Spin Coating

Photoresist Spin Coating

MEL G611 : IC FABRICATION TECHNOLOGY 32 BITS Pilani, Hyderabad Campus

Litho: Spin Coating

Photoresist Spin Coating

MEL G611 : IC FABRICATION TECHNOLOGY 33 BITS Pilani, Hyderabad Campus

Litho: Spin Coating

Photoresist Spin Coating

MEL G611 : IC FABRICATION TECHNOLOGY 34 BITS Pilani, Hyderabad Campus