See discussions, stats, and author profiles for this publication at: https://www.researchgate.

net/publication/283644148

The Effect of Temperatures on the Silicon Solar Cell

Article · July 2014

CITATIONS READS

8 8,770

1 author:

Asif Javed
Government College University Faisalabad
5 PUBLICATIONS   15 CITATIONS   

SEE PROFILE

Some of the authors of this publication are also working on these related projects:

theoretical quantum plasma View project

All content following this page was uploaded by Asif Javed on 10 June 2018.

The user has requested enhancement of the downloaded file.

 International Association of Scientific Innovation and Research (IASIR) ISSN (Print): 2279-0047
(An Association Unifying the Sciences, Engineering, and Applied Research) ISSN (Online): 2279-0055

International Journal of Emerging Technologies in Computational

and Applied Sciences (IJETCAS)
www.iasir.net
The Effect of Temperatures on the Silicon Solar Cell
Asif Javed
Department of Physics
GC University, Faisalabad – 38000, Pakistan
__________________________________________________________________________________________
Abstract: In this research work, described the effect of temperatures on the silicon solar cells parameters such
as open circuit voltage, short circuit current, fill factor and efficiency. These all parameters are the function of
temperature to understand the performances of silicon solar cells at temperature range (20-80)OC and
estimated variation of silicon solar cells parameters such as short circuit current I sc increases so tedious with
temperature but voltage Voc decreases regularly and shows linearly behavior on this temperature conditions.
The fill factor and efficiency variations are directly proportional to the Isc and Voc respectively.. On this
temperature range the maximum efficiency of (18.5%) is obtained in which I sc= 37.56 mA and Voc=667.3 mV.

Keywords: silicon solar cell; open circuit voltage; short circuit current; temperature; linearly; efficiency.
_________________________________________________________________________________________

I. Introduction
To estimate the performances of silicon solar cells under different conditions such as irradiance and temperature
[1].Solar radiation produces great effect on the performance of silicon solar cell in the form of temperature.
There are so many parameters can effects on the performances of solar cells working in which most prominent
is temperature. A standard solar cell conditions are solar radiation is equal 1kW/m2 and temperature usually
25OC [2].In this paper, we talk about the solar cells effects on the temperature variation. For that purpose only
crystalline silicon solar cells were used.

II. Silicon Solar Cells

The temperature performance of crystalline silicon solar cells were studied because c-Si solar cells most
promising substance in the field of photovoltaic application, specially used for the solar cell among low cost and
a large area [3-4]. There are so many technologies that produce energy but all of these are harming full but the
only solar energy is environmental friendly and non toxic. In photovoltaic industry different material are used in
which silicon most popular candidate due to its easily availability and this silicon further divide into some
categories such as amorphous, crystalline and multi-crystalline. The most silicon solar cells made by crystalline
material because of excess of existing in the earth about 80% [5-6].

III. Simulated Parameters Details

In this section describes the main parameters of the silicon solar cells base on different quantities. Short circuit
and open circuit voltage is function of temperature.

A. Open Circuit Voltage

Maximum voltage of the solar cell which can be delivering and open circuit voltage no flow of current exist.
It calculates by the formula (VOC).Open circuit voltage depends on Jo Saturation current. Open Circuit Voltage
decrease with increase the temperature in regular interval

(1)
Where, K, is Boltzmann constant, T, is the temperature, q is the electronic charge, J ph, is the photocurrent, and
Jo, is the diode saturation current.

B. Short Circuit Current

Short circuit current is the maximum current of the solar in the circuit and no open circuit voltage no exist. It
calculates by the formula (ISC).
(2)
Where, q is the electronic charge, G, Ln, Lp

C. Fill Factor
An optimal output power needs for electrical engineering through load resistor R a. The maximum power (Pm) is
obtain from where Im and Vm locate points. FF Factor is ratio (Vm x Im) to (VOC x ISC) is given: Why we called

IJETCAS 14-643; © 2014, IJETCAS All Rights Reserved Page 305

Asif Javed., International Journal of Emerging Technologies in Computational and Applied Sciences, 9(3), June-August, 2014, pp. 305-308

fill factor because of graphically show the covered area under I-V curve are fill by two rectangles first one is
Vmx Im and VOC x ISC). 0.75 to 0.85 this is range of normally fill Factor.
(3)
Where Vm, maximum voltage, Im, maximum current, Voc, open circuit voltage and Isc, short circuit current.

D. Efficiency
Efficiency of the solar cell is calculated by the ratio maximum power generated verus incoming power. The
incoming solar intensity Pin is 1000W/m2 of spectrum 1.5AM
(4)
Where Vm, maximum voltage, Im, maximum current, Voc, open circuit voltage, Isc, short circuit current and
Plight, Power light

IV. Result and discursions

The most important parameter of silicon solar cell efficiency is open circuit voltage (Voc). It is function of
temperature which shown in equation [1]. For Temperature range 20 to 80 thickness =100µm. The Voc
decreases as temperature increased as shown in table (1).

Table I: Open circuit voltage verse Temperature

T(OC) Vsc(mv)
20 663.9
25 654.9
30 645.4
35 635.7
40 625.9
45 615.9
50 606.0
55 595.9
60 585.8
65 575.7
70 565.6
75 555.4
80 545.2

Figure (1) shows the effect of temperature variation on the Voc. At 20oC° the Voc has it higher value of 663.9
mV and increased with temperature to achieve its minimum value of 545.2mV at 80C° and its regularly
decreeing with temperature increased.

Figure 1: Variation of VOC with Temperature at 100µm

680

Voc(mv)
660
Thickness = 100m
640 Bulk Recombination= n= p=100s

620
Voc(mv)

600

580

560

540

10 20 30 40 50 60 70 80 90
o
Temp ( C)
.

IJETCAS 14-643; © 2014, IJETCAS All Rights Reserved Page 306

Asif Javed., International Journal of Emerging Technologies in Computational and Applied Sciences, 9(3), June-August, 2014, pp. 305-308

he short circuit current Isc of the silicon solar cell minor depending on temperature as shown in equation [2].The
short circuit current, Isc, versus temperature is shown in table below:
Table II: Short circuit current versus temperature
T(OC) Isc(mA)

20 37.49
25 37.50
30 37.51
35 37.52
40 37.52
45 37.53
50 37.53
55 37.54
60 37.54
65 37.55
70 37.55
75 37.56
80 37.56
Figure (2) shows that the effect of temperature variation on I sc. The short circuit current Isc was minor increase
with temperature which almost no change and tends to arrive at its maximum value of (37.56 mA) at
temperature of (80°C). Isc start to almost no depends on temperature increase and minimum value 37.49 mA at
T=20°C.
Figure 2: Variation of ISC with Temperature at 100µm.
.

37.56

37.54

37.52
Isc(mA)

ISC(mA)
Thickness = 100m
37.50 Bulk Recombination= n= p=100s

37.48
10 20 30 40 50 60 70 80 90
o
Temp( C)

The efficiency of Silicon solar cell is most important parameter which shows the performance on temperature
and FF of Silicon Solar cell between 0.75 to 0.85 on standard solar irradiation 1kw/m2 in equation [4] The
efficiency at different temperatures is shown in table below:

Table III: The Temperature of Silicon solar cell versus External Parameters
T(OC) Isc(mA) Voc(mv) η(%)
20 37.49 663.9 18.34
25 37.50 654.9 17.97
30 37.51 645.4 17.57
35 37.52 635.7 17.17
40 37.52 625.9 16.78
45 37.53 615.9 16.55
50 37.53 606.0 16.16
55 37.54 595.9 15.76
60 37.54 585.8 15.35
65 37.55 575.7 14.94
70 37.55 565.6 14.53
75 37.56 555.4 14.12
80 37.56 545.2 13.71

IJETCAS 14-643; © 2014, IJETCAS All Rights Reserved Page 307

 Asif Javed., International Journal of Emerging Technologies in Computational and Applied Sciences, 9(3), June-August, 2014, pp. 305-308

In Figure shows that maximum value of efficiency 18.34% at Temperature 20 oC and at Temperature 80 oC
obtained minimum. The open circuit voltage increased with decreased Temperature.
Figure 3: Variation of ƞ with Temperature at 100µm.

19


18
Thickness = 100m
Bulk Recombination= n= p=100s
17


16

15

14

13
10 20 30 40 50 60 70 80 90
O
Temp ( C)

V. Conclusion
In this study we have evaluated effect of temperature on the performance of thin film silicon solar cell made up
materials like crystalline. For that purpose simulation of TF solar cells was performed by using PC1D. The
temperature is varied from 20 – 80 C while solar cell thickness was varied from 100 micron down to 1 micron.
It is observed that the Voc, FF and efficiency decreases with increasing temperature whereas Jsc shows almost
no appreciable change and maximum value of 157 mV at 89° C is obtained. The short circuit current (Isc)
increase with temperature increases until reaching a maximum value of 92 mA at 85°C and then decreases for
highest temperatures. The efficiency follows the changes of open circuit voltage and short circuit current.
Maximum Efficiency was achieved η=18.34% in PCID with Thickness 100µm at temperature 20 OC. Figure (4)
show the changes of Voc, Isc and η in each case.

References
[1] Tsuno, Y., Hishikawa, Y., & Kurokawa, K. (2005). Temperature and irradiance dependence of the IV curves of various
kinds of solar cells. In 15th international photovoltaic science & engineering conference (PVSEC-15) (No. 1).
[2] Singh, P. & Ravindra, N.M. (2012). Temperature dependence of solar cell performance an analysis. Solar Energy Materials
& Solar Cells, 101, 36-45.
[3] Carlson DE. Monolithic amorphous silicon alloy solar modules. Solar Energy Materials and Solar Cells 2003;78:627–45.
[4] V. Fthenakis, Third Generation Photovoltaics, pp.202, InTech Publisher, Croatia 2012
[5] Z. C. Liang, D. M. Chen, X. Q. Liang, Z. J. Yang, H. Shen, and J. Shi, “Crystalline Si solar cells based on solar grade silicon
materials”, Renewable Energy, vol. 35, no.10, pp.2297-2300,Oct. 2010.

IJETCAS 14-643; © 2014, IJETCAS All Rights Reserved Page 308

View publication stats