FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET

November 2011

FDC658AP
Single P-Channel Logic Level PowerTrench® MOSFET
-30V, -4A, 50m:
General Description Features
This P-Channel Logic Level MOSFET is produced using
Fairchild's advanced PowerTrench process. It has been „ Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A
optimized for battery power management applications.
„ Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A
Applications „ Low Gate Charge

„ Battery management „ High performance trench technology for extremely low

rDS(on)
„ Load switch
„ RoHS Compliant
„ Battery protection

„ DC/DC conversion

S
D
1 6
D
2 5
G
D
D 3 4
PIN 1
SuperSOTTM-6

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage r25 V
Drain Current - Continuous (Note 1a) -4
ID A
- Pulsed -20
Maximum Power dissipation (Note 1a) 1.6
PD W
(Note 1b) 0.8
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RTJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity
.58A FDC658AP 7inch 8mm 3000 units

©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDC658AP Rev. B1
 FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage ID = -250PA, VGS = 0V -30 V
'BVDSS Breakdown Voltage Temperature ID = -250PA,
-22 mV/°C
'TJ Coefficient Referenced to 25°C
IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = -24V -1 PA
IGSS Gate-Body Leakage VGS = r25V, VDS = 0V r100 nA

On Characteristics (Note 2)
VGS(TH) Gate Threshold Voltage VDS = VGS, ID = -250PA -1 -1.8 -3 V
'VGS(TH) Gate Threshold Voltage ID = -250PA,
4 mV/°C
'TJ Temperature Coefficient Referenced to 25°C
ID = -4A, VGS = -10V 44 50
ID = -3.4A, VGS = -4.5V 67 75
rDS(on) Static Drain-Source On-Resistance m:
ID = -4A, VGS = -10V,
60 70
TJ = 125°C
ID(ON) On-State Drain Current VGS = -10V, VDS = -5V -20 A
gFS Forward Transconductance ID = -4A, VDS = -5V 8.4 S

Dynamic Characteristics
Ciss Input Capacitance 470 pF
VDS = -15V, VGS = 0V,
Coss Output Capacitance 126 pF
f = 1MHz
Crss Reverse Transfer Capacitance 61 pF

Switching Characteristics (Note 2)

td(on) Turn-On Delay Time 7 14 ns
tr Turn-On Rise Time VDD = -15V, ID = -1A 12 22 ns
td(off) Turn-Off Delay Time VGS = -10V, RGEN = 6: 16 29 ns
tf Turn-Off Fall Time 6 12 ns
Qg Total Gate Charge 6 8.1 nC
VDS = -15V, ID = -4A,
Qgs Gate-Source Charge 2.1 nC
VGS = -5V
Qgd Gate-Drain Charge 2 nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -1.3 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = -1.3 A (Note 2) -0.77 -1.2 V
Notes:
1: RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design.

a) 78oC/W when mounted on a b) 156oC/W whe mounted on a

1 in2 pad of 2 oz copper minimum pad of 2 oz copper

Scale 1: 1 on letter size paper

2: Pulse Test: Pulse Width < 300 Ps, Duty Cycle < 2.0%

2 www.fairchildsemi.com
FDC658AP Rev. B1
 FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics
20 2

DRAIN TO SOURCE ON-RESISTANCE

VGS = -10V -5.0V
-4.5V
-6.0V 1.8
-I D , DRAIN CURRENT (A)

15 VGS = -4.5V
-4.0V
1.6

NORMALIZED
-5.0V
10 1.4
-3.5V
-6.0V
1.2 -7.0V
-8.0V
5
-3.0V -10V
1

0 0.8
0 1 2 3 4 5 0 4 8 12 16 20
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain

Current and Gate Voltage

1.6 0.22
ID = -4.0A
DRAIN TO SOURCE ON-RESISTANCE

ID = -2.0A
VGS = -10V
1.4 0.18
r DS(on), DRAIN TO SOURCE
ON RESISTANCE (OHM)
NORMALIZED

1.2 0.14

TJ = 125oC
1 0.1
o
TJ = 25 C
0.8 0.06

0.6 0.02
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On-Resistance vs Junction Figure 4. On-Resistance vs Gate to Source

Temperature Voltage

15 10
o
25 C VGS = 0V
-I S , REVERSE DRAIN CURRENT (A)

o
VDS = -5V TJ = -55 C
12 1
-I D , D R A IN C U R R E N T (A )

o
125 C
o
TJ = 125 C
9 0.1

o
25 C
6 0.01
o
-55 C
3 0.001

0 0.0001
1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage
vs Source Current

3 www.fairchildsemi.com
FDC658AP Rev. B1
 FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics

10 600
f = 1 MHz
-V G S , G A T E -S O U R C E V O L T A G E (V )
ID = -4A VDS = -5V
-10V Ciss VGS = 0 V
8
-15V 450

C A PA C ITA N C E (pF)
6
300

4 Coss

150
2

Crss
0 0
0 2 4 6 8 10 0 6 12 18 24 30
Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage

100 10

SINGLE PULSE

P(pk), PEAK TRA NSIENT PO W ER (W )

RJA = 156°C/W
rDS(on) LIMIT 8 TA = 25°C
-I D , DR A IN C UR REN T (A )

10 100us

1ms
6

1 10ms

100ms 4
VGS = -10V
SINGLE PULSE
0.1 1s
RJA = 156oC/W 2
o
TA = 25 C
DC

0.01 0
0.1 1 10 100 0.01 0.1 1 10 100
t, PULSE WIDTH (s)
-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power
Dissipation
TRANSIENT THERMAL RESISTANCE

1
r(t), NORMALIZED EFFECTIVE

D = 0.5
RJA(t) = r(t) x RJA
o
0.2 RJA = 156 C/W
0.1 0.1

0.05 P(pk)
0.02 t1
0.01 t2
0.01 TJ - TA = P x RJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, RECTANGULAR PULSE DURATION

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

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FDC658AP Rev. B1
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Definition of Terms
Datasheet Identification
Advance Information
Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I58