AP65PN1R4I

Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ 100% Rg & UIS Test D BVDSS 650V

▼ Fast Switching Characteristic RDS(ON) 1.45Ω
3
▼ Simple Drive Requirement ID 5.2A
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP65PN1R4 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer G
D
with an extreme efficient device for use in a wide range of power S TO-220CFM(I)
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.

.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol Parameter Rating Units
VDS Drain-Source Voltage 650 V
VGS Gate-Source Voltage +30 V
3
ID@TC=25℃ Drain Current, VGS @ 10V 5.2 A
3
ID@TC=100℃ Drain Current, VGS @ 10V 3.3 A
1
IDM Pulsed Drain Current 20.8 A
PD@TC=25℃ Total Power Dissipation 32.9 W
PD@TA=25℃ Total Power Dissipation 1.92 W
4
EAS Single Pulse Avalanche Energy 13.5 mJ
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.8 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W

Data & specifications subject to change without notice 1

201511101
AP65PN1R4I

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 650 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.5A - - 1.45 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V
gfs Forward Transconductance VDS=10V, ID=3A - 9 - S
IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA
Qg Total Gate Charge ID=3A - 32 51 nC
Qgs Gate-Source Charge VDS=480V - 8 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 13 - nC
td(on) Turn-on Delay Time VDD=300V - 40 - ns
tr Rise Time ID=3A - 40 - ns
td(off) Turn-off Delay Time RG=50Ω - 140 - ns
tf Fall Time VGS=10V - 36 - ns
Ciss Input Capacitance VGS=0V - 1250 2000 pF
Coss Output Capacitance VDS=100V - 44 - pF
Crss Reverse Transfer Capacitance .
f=1.0MHz - 9 - pF
Rg Gate Resistance f=1.0MHz - 1.5 3 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=3A, VGS=0V - - 1.5 V
trr Reverse Recovery Time IS=3A, VGS=0V - 320 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 1.7 - uC

Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Ensure that the junction temperature does not exceed TJmax..
4.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP65PN1R4I

16 8

o o 10V
T C =25 C T C =150 C
10V 9.0V
8.0V 8.0V
ID , Drain Current (A)

ID , Drain Current (A)

12 6
7.0V 7.0V
6.0V
0.37Ω
8 4

V G =6.0V

4 2
V G =5.0V

0 0
0 10 20 30 40 0 8 16 24 32

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

2.6 4

I D =2.5A I D =2.5A
V G =10V
T C =25 o C
Normalized RDS(ON)

2.2 3
RDS(ON) (Ω)

1.8 2

.
1.4 1

1 0
5 6 7 8 9 10 -100 -50 0 50 100 150

V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( o C )

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10 2

I D =250uA

8 1.6
Normalized VGS(th)
IS (A)

6 1.2

T j = 150 o C T j = 25 o C
4 0.8

2 0.4

0 0
0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100 150

V SD (V) T j , Junction Temperature ( o C )

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP65PN1R4I

12
f=1.0MHz
2000

I D =3A
10
V DS =480V
VGS , Gate to Source Voltage (V)

1600

8
C iss
1200
0.37Ω

C (pF)
6

800

400
2

C oss
0 0
C rss
0 10 20 30 40 0 100 200 300 400 500 600 700

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthjc)

Duty factor=0.5

10 Operation in this area

limited by RDS(ON)

10us 0.2
ID (A)

100us
0.1
0.1

0.1
. 0.05 PDM
1ms
t
T

0.01
10ms 0.02
Duty factor = t/T
100ms
T C =25 o C 0.01
Peak Tj = PDM x Rthjc + T C

Single Pulse DC
Single Pulse

0.001 0.01
1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance

40 2

I D =1mA
PD , Power Dissipation (W)

1.6
Normalized BVDSS

30

1.2

20

0.8

10

0.4

0 0
0 50 100 150 -100 -50 0 50 100 150

T C , Case Temperature ( o C ) T j , Junction Temperature ( o C)

Fig 11. Total Power Dissipation Fig 12. Normalized BVDSS v.s. Junction
Temperature

4
 AP65PN1R4I
MARKING INFORMATION

Part Number

65PN1R4
YWWSSS

Date Code (YWWSSS)

Y：Last Digit Of The Year
WW：Week
SSS：Sequence