ECE

 305     Spring  2015  

ECE  305  Homework  SOLUTIONS:  Week  7  

 
Mark  Lundstrom  
Purdue  University  
 
 
1) A  silicon  diode  is  symmetrically  doped  at   N D = N A = 1015  cm-­‐3.    Answer  the  following  
questions  assuming  room  temperature,  equilibrium  conditions,  and  the  depletion  
approximation.  
 
1a)    Compute   Vbi .  
 
Solution:  
k BT ⎛ N A N D ⎞ ⎛ 1030 ⎞
Vbi = ln ⎜ 2 ⎟ = 0.026ln ⎜ 1020 ⎟ = 0.60  V  
q ⎝ ni ⎠ ⎝ ⎠
Vbi = 0.60  
 
1b)    Compute   xn , x p  and  W.  
 
1/2
⎡ 2κ ε NA ⎤
Solution: xn = ⎢ S 0 Vbi ⎥ = 0.625 µ m    
⎢⎣ q N D ( N A + N D ) ⎥⎦
 
xn = x p = 0.625 µ m  (because  the  N  and  P  regions  are  symmetrical)  

W = xn + x p = 1.25 µ m
 
 
1c)   Compute   V ( x = 0 )  and  E ( x = 0 ) .    Take  the  reference  for  the  potential  to  be  the  
neutral  P-­‐region,  which  means  that  the  neutral  P-­‐region  is  at   V = 0  and  the  
neutral  N-­‐region  is  at   V = Vbi  
 
Solution:  
By  symmetry:  
Vbi qN A 2
V (0) = = 0.30 V  or  use   V ( x = 0 ) = x  
2 2κ S ε 0 p
qN A
E ( x = 0) = x = 9.6 × 103
κ Sε0 p  

E ( 0 ) = 9.6 × 103 V/cm  

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HW7  solutions  (continued):  
 
1d)    Sketch   ρ ( x )  vs.  x.  
 
Solution:  
ρ N = +qN D = +1.6 × 10 −4 C/cm 3
 
ρ P = −qN A = −1.6 × 10 −4 C/cm 3  
 

 
2) A  silicon  diode  is  asymmetrically  doped  at   N A = 10 N D = 1015  cm-­‐3  .  Answer  
19
 cm-­‐3  and  
the  following  questions  assuming  room  temperature,  equilibrium  conditions,  and  the  
depletion  approximation.  
 
2a)      Your  textbook  (Pierret,  SDF)  presents  the  “classic”  expressions  for  PN  junction  
electrostatics.    Simplify  these  expressions  for  a  “one-­‐sided”  P+N  junction  for  
which   N A >> N D .    Present  simplified  expressions  (when  possible)  for  the  
following  quantities:  
 
Solution:  
 
A)    The  built-­‐in  potential,   Vbi ,  from  Pierret,  Eqn.  (5.10).  
 
k BT ⎛ N D N A ⎞
Vbi = ln ⎜  no  simplification  is  possible  
q ⎝ ni2 ⎟⎠
 
B)    The  total  depletion  layer  depth,   W ,  from  Pierret,  Eqn.  (5.31).  
 
1/2 1/2
⎡ 2κ ε ⎛ N + N D ⎞ ⎤ ⎡ 2κ ε ⎤
W =⎢ S 0⎜ A ⎟ Vbi ⎥   N A >> N D à   W = ⎢ S 0 Vbi ⎥  
⎣ q ⎝ NDNA ⎠ ⎦ ⎣ qN D ⎦
 

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HW7  solutions  (continued):  

 
C)    The  peak  electric  field,  E ( 0 ) ,  from  Pierret,  Eqn.  (5.19)  or  (5.21).  

2Vbi 2qVbi ⎛ N D N A ⎞ 2qN DVbi

E (0) = = ⎜ ⎟    à   E ( 0 ) =  
W κ sε 0 ⎝ N A + N D ⎠ κ sε 0
 
D)    The  electrostatic  potential,   V ( x )  from  Pierret,  Eqn.  (5.28)  
qN D
V ( x ) = Vbi −
2κ S ε 0
( xn − x ) à     V ( x ) = Vbi −
2 qN D
(W − x )2  
2κ S ε 0
Now  use  the  expression  for  W  above  to  find:  
V ( x ) = Vbi ⎡1 − (1 − x W ) ⎤
2
⎣ ⎦
 
 
2b)    Compute   Vbi  for  this  diode.  
 
Solution:  
k BT ⎛ N A N D ⎞ ⎛ 1025 × 1019 ⎞
Vbi = ln ⎜ 2 ⎟ = 0.026ln ⎜⎝ 1020 ⎟⎠ = 0.84  V  
q ⎝ ni ⎠
Vbi = 0.84
 
 
2c)    Compute   xn , x p  and  W.  
 
Solution:  
1/2
⎡ 2κ ε ⎤
x p ≈ 0   xn ≈ W = ⎢ S 0 Vbi ⎥ = 1.05 µ m    
⎣ qN D ⎦
 
W = 1.05 µ m  (depletion  region  mostly  on  the  N-­‐side,  the  lightly  doped  side)  
 
2d)    Compute   V ( x = 0 )  and  E ( x = 0 ) .  
 
Solution:  
 
V ( 0 ) ≈ 0 V  We  are  taking  our  reference  for  the  potential  to  be  the  neutral  part  of  the  
P-­‐side  far  away  from  the  junction.    Since  the  depletion  layer  is  on  the  N-­‐side,  
essentially  all  of  the  bandbending  (and  the  built-­‐in  potential  drop)  occurs  on  the  N-­‐
( )
side.     V −xn = Vbi .  
 

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HW7  solutions  (continued):  

 
Note  that  we  could  have  just  as  well  taken  our  reference  for  the  potential  to  be  the  
( )
neutral  part  of  the  N-­‐side  far  away  form  the  junction.    Then   V x p ≈ V ( 0 ) = −Vbi .  
 
The  answer  depends  on  where  we  take  the  reference.    Potentials  are  always  
arbitrary  in  terms  of  the  chosen  reverence,  but  quantities  like  the  electric  field  
 
cannot  depend  on  where  we  choose  our  reference.
 
qN D
E (0) = W = 1.6 × 104 V/cm
κ Sε0  
E ( 0 ) = 1.6 × 104 V/cm  (plus  sign  assumes  N  region  is  on  the  left)  
 
2e)    Sketch   ρ ( x )  vs.  x.  
 
Solution:  
 

 
 
The  charge  on  the  P-­‐side  is  essentially  a  delta  function  with  the  total  charge  in  C/cm2    
equal  in  magnitude  and  opposite  in  sign  to  the  charge  on  the  N-­‐side  
 
3) This  problem  concerns  a  junction  with  a  heavily  doped  N-­‐type  region,  a  thin  intrinsic  
layer,  and  a  moderately  doped  P-­‐type  region  as  sketched  below.      Assume  the  
depletion  approximation  and  assume  that  the  width  of  the  depletion  region  on  the  P-­‐
side  is  greater  than  the  thickness  of  the  intrinsic  layer.  
 
 
 
 
 
 
 

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HW7  solutions  (continued):  

 
3a)     Sketch  the  electric  field  vs.  position  assuming  the  depletion  approximation.  
 
Solution:  

       
 
3b)     Using  the  sketch  in  4a),  develop  an  expression  for  the  depletion  layer  width  in  
the  p-­‐region,  W.    Your  answer  should  be  in  terms  of   Vbi  and   N A .    
 
Solution:    
1
The  area  under  the  curve  is  the  built-­‐in  potential:    E max xi + E max (W − xi ) = Vbi    
2
2Vbi
E max =  
( xi + W )
We  can  get  another  expression  for  E max  from  the  Poisson  equation:  
dE −qN A
=
dx κ S ε 0  
qN A
E max =
κ Sε0
(W − xi )  
2κ S ε 0Vbi
Now  equate  the  two  expressions  for  E max to  find:     W 2 − xi2 =
qN A  

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HW7  solutions  (continued):  

 
2κ S ε 0Vbi
Finally     W = + xi2  
qN A
Note  that  for   xi = 0 ,  we  get  the  expected  result.  
 
3c)     Compare  this  structure  to  the  same  structure  without  the  intrinsic  layer.  Explain  
what  effect  the  intrinsic  layer  will  have  on  the  built-­‐in  potential,   Vbi .  
 
Solution:  
The  built  in  potential  develops  to  align  the  Fermi  levels  at  the  two  ends  of  the  
device.    It  does  not  matter  what  is  in  between.  
 
No  effect  on  Vbi.  
 
3d)     Compare  this  structure  to  the  same  structure  without  the  intrinsic  layer.    Explain  
what  effect  the  intrinsic  layer  will  have  on  the  maximum  electric  field  in  the  
junction.  
 
Solution:  
We  can  see  from  the  equations  in  4b)  that  W  will  be  bigger  so  E max  will  be  
reduced.    Another  way  to  see  this  is  from  the  fact  that  potential  is  integral  of  
electric  field  vs.  position.    As  we  increase  the  distance  over  which  there  is  an  
electric  field,  then  a  smaller  electric  field  gives  the  same  potential  drop.  
 
4) A  silicon  diode  is  asymmetrically  doped  at   N D = 1019  cm-­‐3  and N A = 1016  cm-­‐3.    (Note  
that  at   N D = 1019 the  semiconductor  is  on  the  edge  of  degeneracy,  but  we  can  assume  
that  non-­‐degenerate  carrier  statistics  are  close  enough  for  this  problem.)    Answer  the  
following  questions  assuming  room  temperature.    Assume  that  the  minority  electron  
and  hole  lifetimes  are   τ n = τ p = 10−6  s.    The  lengths  of  the  N  and  P  regions  are  
L = 500 µm  and   L >> x p , xn .  Assume  an  “ideal  diode”  and  answer  the  following  
questions.  

 
 

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HW7  solutions  (continued):  

 
4a)    Compute   J D = I D A ,  the  diode  current  density  at  a  forward  bias  of     V A = 0.5  V.  
 
Solution:  
Since  this  in  a  one-­‐sided  junction  with   N D >> N A  ,  essentially  all  of  the  current  is  
due  to  electrons  injected  into  the  P-­‐region.  
 

JD = q
N A Ln
(
ni2 Dn qVA kBT
e ) (
− 1 = J 0 eqVA kBT − 1     )
(*)  

 
From  Fig.  3.5  on  p.  80  of  SDF,   µ n = 1248 cm 2 V-s  at   N A = 1016  .  
Using  the  Einstein  relation,  we  find  
 
kT
Dn = B µ n = 0.026 × 1248 = 32.4 cm 2 /s    
q
The  diffusion  length  is:  
 
Ln = Dnτ n = 32.4 × 10−6 = 57 µm    
 
Since   Ln << L  ,  this  is  indeed  a  long  base  diode  as  assumed  in  (*)  
Now,  putting  numbers  n  (*):  
n2 D 1020 32.4
J 0 = q i n = 1.6 × 10−19 16 = 9.1× 10−12 A/cm 2  
N A Ln 10 57 × 10−4
(
J D = J 0 eqVA k BT
) ( ) (
− 1 = 9.1× 10−12 e0.5/0.026 − 1 = 9.1× 10−12 2.25 × 108 − 1 = 2.1× 10−3   )
 
J D ( 0.5 V ) = 2.1× 10−3 A/cm 2  
 
4b)    Compute   J D = I D A ,  the  diode  current  density  at  a  forward  bias  of     V A = 0.6  V.  
 
Solution:  
Under  modest  forward  bias  we  can  ignore  the  -­‐1:  
( )
J D = J 0 eqVA kBT − 1 ≈ J 0 eqVA kBT  
J D ( 0.6 V ) = J 0 eq0.6 kBT = J 0 eq0.5 kBT × eq0.1 kBT = J D ( 0.5 V ) × 46.8  
J D ( 0.6 V ) = J D ( 0.5 V ) × eq0.1 kBT = 2.1× 10−3 × e0.1 0.025 = 9.6 × 10−2  
 
J D ( 0.6 V ) = 9.6 × 10−2 A/cm 2  

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HW7  solutions  (continued):  

 
4c)    Compute   J D = I D A ,  the  diode  current  density  at  a  reverse  bias  of     V A = −0.5  V.  
 
Solution:  
J D ( −0.5 V ) = J 0 e ( ) (
q −0.5 k BT
) ( ) (
− 1 = J 0 e−0.5 0.025 − 1 = J 0 4.5 × 10−9 − 1 ≈ − J 0   )
 
J D ( −0.5 V ) = − J 0 = −9.1× 10−12 A/cm 2  
 
4d)    Compute   J D = I D A ,  the  diode  current  density  at  a  reverse  bias  of     V A = −0.6  V.  
 
Solution:  
J D ( −0.6 V ) = J 0 e ( ) (
q −0.6 k BT
) ( ) (
− 1 = J 0 e−0.6 0.025 − 1 = J 0 9.5 × 10−11 − 1 ≈ − J 0   )
J D ( −0.6 V ) = − J 0 = −9.1× 10−12 A/cm 2
 
 
For  an  ideal  diode,  the  reverse  current  is  constant  at   J D = − J 0  as  long  as  the  
reverse  bias  is  greater  than  a  few   k BT q .  
 
 
5) Consider  the  diode  in  problem  1)  above  and  answer  the  following  questions.  
 
5a)    If  the  diode  is  biased  such  that   J D = 10−6 A/cm 2 ,  what  is   V A  ?  
 
Solution:  

Begin  with   J D = q (
ni2 Dn qVA kBT
N A Ln
e ) (
− 1 = J 0 eqVA kBT − 1   )
 
In  moderate  forward  bias,  we  can  drop  the  -­‐1:  
J D = J 0 eqVA kBT  
 
so  
k T ⎛J ⎞
V A = B ln ⎜ D ⎟  
q ⎝J ⎠
0

Putting  in  numbers:  

⎛ 10−6 ⎞
V A = 0.026ln ⎜ = 0.302 V     V A = 0.302 V  
⎝ 9.1× 10 ⎟⎠
−12

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HW7  solutions  (continued):  

 
5b)    If  the  temperature  changes  from  300  K  to  301  K,  how  much  does   V A  change?  
 
Solution:  
 
Differentiate  the  expression  that  we  obtained  above:  
d ⎧⎪ k BT ⎛ J D ⎞ ⎫⎪ k B ⎛ J D ⎞ k BT J 0 d
dV A
=
dT dT ⎪⎩ q
⎨ ln ⎜ ⎟ ⎬ = ln ⎜ ⎟ +
⎝ J 0 ⎠ ⎪⎭ q ⎝ J 0 ⎠ q J D dT
( )
J D J 0`−1  

dV A k B ⎛ J D ⎞ k BT ⎛ 1 dJ 0 ⎞
= ln ⎜ ⎟ −  
dT q ⎝J ⎠ 0
q ⎜⎝ J dT ⎟⎠
0

dJ 0 d ⎛ n Dn ⎞
2
= q i
 
dT dT ⎜⎝ N A Ln ⎟⎠
 
The  strongest  part  of  the  temperature-­‐dependence  comes  from  the  exponential  
factor  in   ni2 ,  so  we  can  ignore  the  temperature  dependence  of  the  diffusion  
coefficient,  the  diffusion  length,  and  the  effective  densities-­‐of-­‐states  and  write:  
 
J 0 = Ke− EG kBT    
then  
1 dJ 0 1 ⎛ E ⎞ ⎛ E ⎞
= − EG k BT
Ke− EG kBT ⎜ G 2 ⎟ = ⎜ G 2 ⎟ ,  
J 0 dT Ke ⎝ k BT ⎠ ⎝ k BT ⎠
which  can  be  used  to  find  
dV A k B ⎛ J D ⎞ k BT ⎛ 1 dJ 0 ⎞ k B ⎛ J D ⎞ k BT ⎛ EG ⎞
= ln ⎜ ⎟ − = ln −  
dT q ⎝ J0 ⎠ q ⎜⎝ J 0 dT ⎟⎠ q ⎜⎝ J 0 ⎟⎠ q ⎜⎝ k BT 2 ⎟⎠
so  
dV A k B ⎛ J D ⎞ ⎛ EG q ⎞
= ln ⎜ ⎟ − ⎜ .  
dT q ⎝ J 0 ⎠ ⎝ T ⎟⎠
Putting  numbers  in:  
dV A 1.38 × 10−23 ⎛ 10−6 ⎞ ⎛ 1.12 ⎞
= ln −  
dT 1.6 × 10−19 ⎜⎝ 9.1× 10−12 ⎟⎠ ⎜⎝ 300 ⎟⎠
dV A
= 1.00 × 10−3 − 3.73× 10−3 = −2.7 × 10−3  
dT
 
dV A
≈ −3 mV/K  
dT
 

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HW7  solutions  (continued):  

 
So  we  need  to  lower  the  applied  bias  about  3  millivolts  to  keep  the  current  constant  as  
the  temperature  increases  1  K  or  1  degree  C.  
 
PN  junctions  can  be  used  as  thermometers  because  the  diode  current  depends  
sensitively  on  temperature.  
 
A  more  careful  treatment  would  include  the  temperature  dependencies  of  the  
bandgap,  effective  densities-­‐of-­‐states,  diffusion  coefficient,  etc.,  but  the  result  would  
be  close  to  the  value  obtained  here.  
 
 
 
 
 

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