IEEE SENSORS JOURNAL, VOL. 18, NO.
16, AUGUST 15, 2018
Gas Detection Microsystem With MEMS Gas
Sensor and Integrated Circuit
Jin Wang, Jiaqi Yang, Dongliang Chen, Lele Jin, Yu Li, Yidan Zhang, Lei Xu, Youmin Guo,
Fujiang Lin, Senior Member, IEEE, and Feng Wu, Fellow, IEEE
Abstract— In this paper, a gas detection microsystem which
consists of a highly sensitive micro-electro mechanical sys-
tems (MEMS) gas sensor and a CMOS integrated circuit,
including a read-out circuit, data processing circuit, and an
interface circuit is presented. The integrated microsystem whose
area is less than 3 mm2 can work with only power supply due
to the integration and flexibility. By packing the MEMS gas
sensor with the integrated circuit using a customized package,
the system can detect a variety of gases, including ethylene glycol,
ammonia, and alcohol accurately at low concentrations (<1 ppm).
The maximum response toward the gas in the concentration
of 100 ppm can reach about 8.
Index Terms— MEMS gas sensors, CMOS integrated circuit,
integrated microsystem.
I. I NTRODUCTION
W ITH the improvement of living environment require-
ments and the safety of industrial production, there
had been more and more interests and efforts in gas detection
systems. Particular development has been made to monitor
the environment-related gases such as VOC [1]–[5]. The new
demand for portable, low-cost gas-sensing systems is growing
every year, with a focus on safety and security issues [6]. With
the development of micro-electro mechanical systems(MEMS)
technology [7], [8], miniaturized resistive MEMS gas sensors
can work at high temperature around 300-400° to achieve an
acceptable sensitivity in few tens of milliseconds, consuming
a small amount of power [3], [9]–[14].
A gas detection system has to be self-consistent and it
has to work without the need of any laboratory instruments.
Therefore, a gas-sensing system consists of a particular gas
sensor, a readout circuit, a data processing circuit including a
high precision analog-to-digital converter (ADC) and an inter-
face circuit for communication with the computer [10]. In the
past decades, many researchers built the interface circuitry
which can realize the independence of the system in the form
of discrete components on a printed circuit board(PCB) which
Manuscript received November 29, 2017; revised March 27, 2018; accepted
April 14, 2018. Date of publication April 24, 2018; date of current version
July 24, 2018. This work was supported by the Fundamental Research
Funds for the Central Universities under Grant WK2100000005. The associate
editor coordinating the review of this paper and approving it for publication
was Dr. Pantelis Georgiou. (Jin Wang and Jiaqi Yang are co-first authors.)
(Corresponding author: Lei Xu.)
J. Wang, J. Yang, D. Chen, L. Jin, Y. Li, L. Xu, F. Lin, and F. Wu are with
the School of Information Science and Technology, University of Science and
Technology of China, Hefei 230027, China (e-mail: okxulei@ustc.edu.cn).
Y. Zhang and Y. Guo are with the School of Physics and Materials Science,
Anhui University, Hefei 230601, China.
Digital Object Identifier 10.1109/JSEN.2018.2829742
1558-1748 © 2018 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
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6765
occupies a large area and leads to a high price [12], [15]–[17].
Although the design of the PCB is extremely simple, it is
necessary to design a chip which can take the place of PCB
for miniaturization and low price.
With the development of technology in the past 20 years,
a miniaturized gas-sensing system can be realized on a
single chip (single-chip approach) [18]–[20] or on different
chips included in the same package [21], [22] (multi-chip
approach) [6]. In the single-chip approach the whole system
is realized in a fabrication process optimized for integrated
circuits (IC) including the interface circuit, with a few com-
patible post-processing steps (typically etching or deposition
of materials) [10]. Essay gives a good example of an excellent
designed integrated system by Afridi et al. [18] in 2002.
Although he achieved monolithic integration, the interface
circuits can’t meet all the needs for data processing and
communicating with the computer. Similarly, the multi-chip
approach the interconnections between the sensor chip and the
interface circuit, chip can be made with bonding wires or with
other techniques, such as flip-chip or wafer bonding. With
this approach the different chips can be fabricated with dif-
ferent technologies and optimized for the sensors and the
circuitry [6]. Therefore, both of two approaches are more
useful than the design with the PCB.
The single-chip gas-sensing system requires smaller area for
the whole chip. However, this approach may increase the costs
for an advanced fabrication process and decrease the
flexibility of the system, thus making the design more
challenging [6]. Moreover, if there is any problem in the any
one of two parts, the other parts can’t work while the multi-
chip approach can avoid the problem because of separate
design. So a lot of researchers chose to design a gas sensor and
an application specific chip in multi-chips approach., in view
of its flexibility and potentially low cost. Malcovati et al. [6]
designed a CMOS integrated interface circuit which can realize
the independence of the system for metal-oxide gas sensors by
the means of the multi-chip approach in 2012. Many problems
on the accuracy and communication with computer and smart
phone still exist in gas detection system. Meanwhile, the area
of the chip will affect the portability of the system when it is
larger than 10 mm2 [6].
In this paper, we give a detailed description of the gas
detection microsystem including the MEMS gas sensor [23]
and the specific chip. The chip which is fabricated in a
standard 0.18 um CMOS process can realize all the functions
above, for instance, a variable power supply for gas sensors,
 6766 IEEE SENSORS JOURNAL, VOL. 18, NO. 16, AUGUST 15, 2018

Fig. 2. The schematic of gas sensor circuit.

Fig. 1. The structure of the MEMS gas sensor.

data process including a 10-bit ADC [24] for a higher accuracy

and communication with the computer by an widely used I2 C
interface circuit.

II. M EMS G AS S ENSOR

The design of the MEMS gas sensor is shown in Fig. 1. It’s
a kind of metal oxide semiconductor (MOS) gas sensor with
a sensitive material of tin oxide (SnO2 ). Based on a silicon
substrate, the active area of the micro/nano gas sensing chip
consists of five layers from bottom to up: supporting layer,
microheater made by Pt, isolation layer, interdigital electrodes,
and SnO2 nanoparticles film. Fig. 3. The architecture of chip.
The supporting layer, which is made of SiO2 /Si3 N4 ,
is suspended by four slender beams for thermal isolation.
Pt microheater maintains proper working temperature for gas
sensing with electric current flows through it. With an isolation
layer (SiO2 or Si3 N4 ), the micro-spaced interdigital electrodes
are well separated from Pt microheater. The resistance of SnO2
nanoparticles film is measured and monitored by interdigital
electrodes during test. There are four pads on the surface
of silicon substrate, two of which are for injecting current
to the Pt microheater. The other pads are for measuring the
resistance change of gas sensing material. The fabrication
process of the MEMS gas sensor can be found in our previous
papers [23], [25].
The internal circuit of the gas sensor is presented in Fig. 2.
Fig. 4. The schematic of the signal path circuit.
The voltage (V H ) which can drive the heater resistance (R H )
heating the sensing resistance (RS) can be controlled by
an external circuit. The change of sensing resistance signal measuring circuit, low-pass filter (LPF), 10-bit analog-to -
can be reflected by the voltage across the resistance. It’s digital converter (ADC), logic part including an I2 C serial
obviously that the measurement in voltage across the resistance interface to handle the external communication, relaxation
is more convenient than the measurement of resistance itself. oscillator, power-on reset circuit and power management.
Therefore, the concentration of the target gas in the environ- The circuits can match the gas sensor very well. For better
ment can be determined by measuring the voltage across the flexibility, the gas detection system adapts different modes to
sensing resistance. How to measure the voltage and control different requirements. The whole system can be controlled
the heater are urgent problems need to be solved. by the circuit according to the corresponding demand.

III. C IRCUIT D ESIGN A. Signal Path Circuit

In this section, the circuit implementation is presented. The schematic of the signal path circuit is shown in the
As shown in Fig. 3, the chip includes the following parts: Fig. 4. It consists of a measuring circuit which generates

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 WANG et al.: GAS DETECTION MICROSYSTEM WITH MEMS GAS SENSOR AND IC 6767

DC voltage signal by resistive division, a LPF acting as

an anti-aliasing filter to remove the high-frequency interfer-
ence and a 10-bit successive approximation register (SAR)
ADC [24], [26]. The LPF turns the single-ended output signal
of the measuring circuit into differential signal, which is then
passed to ADC to be quantized [27]–[29].
In the measuring circuit, Rl is the serial resistance which is
chosen to be the square root of the product of Rs’s maximum
and minimum values. Because that Rl and Rs cannot be
matched on chip, the absolute value of Rl will affect the output
range. The Voltage is given by (1)
Vref Fig. 5. The architecture of the ADC.
Vin = Rs (1)
Rl + Rs
which Vref stands for the reference voltage of the voltage
divider. As is shown in (1), the output range will reduce
when the value of Rl increases. In addition, the sensitivity of
the measuring circuit must be considered due to R1. On the
contrary, the sensitivity will increase when the value of Rl
increases. So it is necessary to make a compromise on the
sensitivity and output range. In order to balance the sensitivity
and the output range, the measuring circuit selects a suitable
resistance.
As the voltage divider requires a high input impedance of
the next stage to avoid current diversion, a source follower is
added before the LPF to act as a voltage buffer. Meanwhile,
two equal resistors are connected in series to generate (2)
Vref
V cm = (2)
2
which is also the median level of Vin. Vcm is buffered as well Fig. 6. The architecture of the logic.
as Vin. Vin_buf and Vcm_buf are pseudo-differential signals.
The LPF is based on a closed-loop operational ampli-
fier (OPA), as shown in Fig. 4. As is well-known, a high the measuring circuit use the same supply power for easier
supply power can make the design of LPF easier when the design and better performance due to the DC gain of the LPF.
output range is set. In addition, the closed-loop OPA can get
a better linearity which also means the harmonic performance B. Logic and Clock Generator Circuit
will get better and the total harmonic distortion (THD) will be The schematic of the logic is shown in Fig. 6. The logic
lower when the supply power is high. In addition to a higher is the most important module for the whole system to ensure
supply power for larger output swing with lower harmonic that the system is controlled of the chip. The logic has two
distortion, the OPA is designed to be a typical 2-stage miller main tasks. One is receive the configuration information from
amplifier with feedback. The cut-off frequency is set at 1 KHz the interface and select an operating mode. The other one is
for the trade-off between the chip area of passive devices and to store and process the 10-bit binary codes from the previous
the alias-free sampling frequency. stage, the ADC. The 10-bit data can be transmitted by an I2 C
The ADC is based on a typical architecture of synchronize interface circuit which is used widely for portability.
successive approximation register (SAR) [24], [26] as shown The logic is divided into the following four parts:
in Fig. 5. The SAR ADC is the last step of the signal path, • The CLKGEN module generates the division clock .
which quantizes the differential signals Vout+ and Vout− • The TPG module generates some ADC test data.
from the anti-aliasing LPF. The SAR ADC is controlled by • As for I2 C SLAVE module, the master can communicate
a synchronous clock supplied by the logic module. with the chip through I2 C interface.
After receiving the clock signal from the logic module, • The CONTORL module ensures the programmability of
the SAR ADC converts the frequency to 10 kHz through the entire system through multiple registers.
the internal divider which means the duty ratio of the clock As previously mentioned, the gas detection system has dif-
becomes 6/16. That is to say, the SAR ADC needs 6 cycles to ferent operating modes including single mode and continuous
sample the data and 10 cycles to convert the voltage signal to mode by configuring the corresponding register in the logic
a10-bit digital signal. When finished, the SAR ADC outputs module. The gas sensor only samples once for testing when the
the 10-bit data to the logic module in parallel. It is worth system is working in single mode. Conversely, when working
mentioning that the digital to analog converter (DAC) as shown in continuous mode the gas sensor will sample continuously
in Fig. 5 and the reference voltage for the voltage divider in for stable work.

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 6768 IEEE SENSORS JOURNAL, VOL. 18, NO. 16, AUGUST 15, 2018

Fig. 7. The block diagram of power management.

Fig. 8. The circuit of linear regulator.

With the purpose of assuring the orderly operation, the clock

generator consisted of a relaxation oscillator which generates
8MHz square wave to serve as the synchronous clock for the
digital logic and the interface I2 C circuit [30], [31] and the
power-on reset circuit to ensure that the digital logic has a
correct initial state [13] is designed.
As in the fast mode the frequency of I2 C signals is 400KHz,
according to the I2 C bus communication protocol, a synchro-
nous clock at least ten times faster is needed [32]. To guarantee
that there is enough margin, the frequency of the output square
wave of the oscillator is set to be approximately 8MHz. The
frequency varies with the process corners of the two MIM
capacitors mainly instead of the temperature. The temperature
characteristic is relatively flat because the reference voltage
and the reference current are co-designed carefully to make
their ratio fixed. The power-on reset circuit is based on the
step response characteristic of the RC series circuit. As the
power supply rises up, the capacitor plate which is connected
with the resistor rises to the highest level. Then the capacitor is
charged through the resistor in an exponential curve. This wave
can be reshaped into a wide pulse through a buffer. The pulse Fig. 9. Gas detection system. (a) Package architecture. (b) Package
width is proportional to the time constant. Hence, using two microphotograph. (c) Microphotograph of the sensor. (d) Microphotograph
of the chip.
RC series circuits with unequal time constant, the output wave
as illustrated can be generated. Note that simply inverting the provides 1V voltage reference for all linear regulators and
high pulse is not feasible, because all the nodes in the system current reference circuit. Every linear regulator is designed
are floated before power on. as two stage. The first stage serves regulated power supply for
the next stage.
C. Power Management The basic architecture of linear regulator is shown in Fig. 8.
The power management power for all other circuit. The All of the 6 linear regulators utilize the same structure.
supply power from outside is only 3.3V. However, the voltage To obtain heavy load current and wide rang input supply
required for different modules is different. For the sensor voltage, the P-type pass MOS is designed in large size.
the supply power voltage depends on its own characteristics The error amplifier (AE) is a classical one stage amplifier.
which can affect the optimal operating point, while there are By adjusting the ratio of R1 and R2, different output voltage
different considerations in supply power for other module. can be achieved.
Of course, the power consumption must be considered for a
whole system. So the supply power should be as small as IV. E XPERIMENTAL R ESULTS
possible after reaching the requirement of the circuits. It’s A. Experimental Details
worth mentioning that the supply power for analog module and In order to validate the circuit which will be used with a gas
digital module must be different due to the noise. Therefore, sensor described in last paragraph, we fabricated a chip whose
power management is used to transform this voltage into microphotograph is shown in Fig. 9(d) using a 0.18um CMOS
different voltage power that is needed in the whole design. The technology. Meanwhile, the microphotograph of the gas sensor
3.3V supply voltage is transformed into 1.2V, 1.5V and 1.8V. is shown in Fig. 9(c). As shown in the Fig. 9, the area of chip
Meanwhile, bias currents are also provided for the whole chip. is 1∗ 1.5mm2 and the sensor area is only 1∗ 1mm2 .
The power management includes 6 linear regulators and one The chip and gas sensor were packaged in a special package
bandgap reference (BGR) block [33], [34]. The BGR circuit with 8 pins for testing as shown in Fig. 9(b). The PADs in the

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 WANG et al.: GAS DETECTION MICROSYSTEM WITH MEMS GAS SENSOR AND IC
Fig. 10. The response time of gas sensor to 60 ppm H2 .
chip and gas sensor were connected with different pins of the
package by an Au wire using a bonding process. The different
functions of different pins are shown in Fig. 9(a). As shown
in Fig. 9(a), pin2 and pin6 are the ground for the chip; pin5 and
pin7 can be a power supply for the chip; pin3 and pin4 are the
communication ports which can communicate with an external
microcontroller; the output of gas sensor was connected with
pin8 for convenient verification. After the chip was connected
with package, the gas sensor can be enabled or disabled and
measured using a serial interface by a microcontroller (MCU).
The MCU can control the chip by writing data to the
register. To enable the gas sensor, the MCU sends a start signal
to each part in the chip and gas sensor. After measurement in
ADC, the data will be saved in the register and passed to the
MCU using I2 C interface through pin3 and pin4.
B. Gas Sensing Measurements
The chemical measurements were carried out by using a
special PCB with the package. The gas sensor was exposed
to the gas at the corresponding concentration of the target
gas firstly, and the resulting signal was recorded at the same
time. Hydrogen (H2 ) was used as a test. The ambient pressure
is set at the total pressure of 100KPa with the flow-rate of
the gas is about 500 sccm [1]. Fig. 10 shows the response
time of gas sensor to 60 ppm H2 . The response time of a
gas sensor is defined as the time when it reaches 90% of its
maximum response. Meanwhile, the recovery time is defined
as it returns to 90% of the original value upon removal of
target gas [35]. As mentioned, the resistance designed in the
gas sensor is very stable, so the response time and the recovery
time of the gas sensors are approximately minutes (<1minute).
As noted, it takes, however, about 1 minute to reach an
equilibrium state after the change of the concentration of gas.
Of course, it is necessary to keep the concentration of gas in
the chamber (volume 60 mL) at the chosen flow- rate in this
time span. The time response of the gas sensor to the target
gas is extremely slow (approximately seconds) compared to
the sampling time (on the order of microseconds) of the ADC.
So a dedicated computer can acquire the sensor response in
digital form at the output of the read-out circuit when the gas
sensor are exposed to different concentrations of gas.
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6769
Fig. 11. Response of the gas sensor to different concentrations of H2 , with
recovery in pure air.
Fig. 12. Calibration curve of the gas sensor towards H2 .
Fig. 11 shows a representative response to different con-
centrations of H2 ranging from 10 ppm to 100 ppm. The gas
sensor’s voltage signal output changes from 0.35 V to 0.9V,
which suggested a resistance of the sensor change from
411K to 3M. A lower value of the voltage signal indicated
a lower resistance of the sensor. Each experimental step lasted
150s at a constant temperature (25°) with recovery in pure air
for 150s.
After acquiring the digital output value of the ADC,
the computer can get the voltage value of the sensor resistance
by an interface circuit which using an I2 C interface. As shown
in Fig. 11, the voltage decreases as the gas concentration
increases. Meanwhile, the voltage can recover from the change
when the gas sensor is in pure air [6]. It can be observed
that the resistance of the gas sensor can be restored to
the initial value. It’s suggested that the gas sensor can be
a reliable gas detection candidate. There exists the small
variations on top of the curve which is due to noise [10].
The noise mainly introduced by the sensor can be reduced by
a filter in the interface circuit. The same gas-sensing test was
repeated without the recovery period in pure air after each gas
concentration step, as shown in Fig. 13(a). Calibration curve
of the gas sensor to different concentrations of H2 is plotted
as shown in Fig. 12, which shows a linear correlation in the
response in reflectance with the change in concentration of H2
 6770 IEEE SENSORS JOURNAL, VOL. 18, NO. 16, AUGUST 15, 2018

Fig. 13. Sensor response to gases. (a) Response of the gas sensor to different concentrations of H2 , without recovery in pure air. (b) Response of the gas
sensor to different concentrations of (CH2 OH)2 . (c) Response of the gas sensor to different concentrations of NH3 . (d) Response of the gas sensor to different
concentrations of CH3 CH2 OH.

over the range from 10 ppm to 100 ppm. The response can be
defined as the following:
Rair
Resonpse = (3)
Rgas
where Rair is the measured resistance in ambient air, Rgas is
the resistance when the sensor is exposed to target gases. The
sensitivity is directly proportional to the change in resistance.
The Rair can be expressed through the voltage of gas sensor
by Ohm’s law [36]:
V outair
Rair = Rl (4)
V r e f − V outair
the response value can be expressed by voltage:
(V r e f − V outgas) V outair
Response = (5) Fig. 14. Gas response to different concentration of H2 , NH3 , CH3 CH2 OH,
V outgas (V r e f − V outair ) (CH2 OH)2 .
where Voutair is the measured voltage in ambient air, Voutgas
is the voltage when the sensor is exposed to target gases. gas sensor are also presented as shown in the Fig. 14, which
The response to H2 can reach about 6.6. Apart from H2 , the shows different linear increment in the response change to
response of the gas sensor to other gas has been measured. the increment in concentration of gas over different ranges.
As shown in Fig. 13, the gas sensor can distinguish different Among the target gases, the response to alcohol and ethylene
concentrations of ammonia (NH3 ), alcohol (CH3 CH2 OH) and glycol ((CH2 OH)2 ) are over 6, and fast response time is
ethylene glycol (CH2 OH)2 . Those experiments are static tests within 10 s. It has been observed that when the concentration
with a sealed chamber (volume 19L) at room temperature. of gas reaches a high level, the response will be slower
After the voltage of the gas sensor stabilizing in the air, the with the increase in gas concentration. The possible reason
concentrations of gas in the chamber can be increased by for the nearly saturated response to higher concentration is
injecting gas into the chamber. Fig. 13 shows a representative that the rate of absorption at the surface of structures is
response to different concentrations of ammonia ranging from close to saturation [37]. The response to ethylene glycol
1ppm to 100 ppm. As shown in the Fig. 13, the 1 ppm can reach about 8. So the gas sensor is a multiplexing gas
ammonia was clearly detectable. Calibration curves of the detector. However, the response to ethylene glycol can reach an

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 WANG et al.: GAS DETECTION MICROSYSTEM WITH MEMS GAS SENSOR AND IC
especially higher value than other gases when the concentra-
tion of gas is very low <( 1ppm). So the sensor can detect the
presence of ethylene glycol even if it is in low concentration.
In conclusions, gas sensor is reasonably selective towards
ethylene glycol. As shown in Fig. 13, there exists a mutation
in the voltage of gas sensor when gas is injected into the
chamber. The reason is that gas molecules have not spread
out, so it need several seconds to spread for a stable status.
V. C ONCLUSION
In this paper we introduced a gas detection microsystem
including an ASIC chip and a gas sensor in customized pack-
age. We designed a sensor microsystem for higher sensitivity,
flexibility and portability. The read-out circuit and the ADC
can accurately sample the output signal of the sensor and
convert it to a 10-bit digital signal. The power management
can supply different modules with different voltages without
applying too much external resources. Meanwhile, the logic
module including an I2 C interface circuit can realize self-
control according to the configuration information from the
interface, which greatly improves flexibility and portability.
More importantly, the area of the chip is only1∗1.5mm2, which
can achieve miniaturization like the single-chip approach. The
experimental results reported that a variety of gases including
hydrogen, ethylene glycol, ammonia and alcohol can be accu-
rately detected, especially ethylene glycol which can make
sensor reach a high response at low concentrations (<1ppm).
The microsystem can work independently without external
circuits which suggests the microsystem may be more flex-
ible and portable. Of course, there are still some problems
in the selectivity of the microsystem. We are designing a
higher selectivity microsystem by applying a gas sensor array.
In spite of that, the gas detection microsystem which is
flexible, portable and miniaturized presented here enables
new applications such as for a sport bracelet and a smart
phone [11], [38], [39].
ACKNOWLEDGMENT
The authors would like to thank the Micro/Nano-Electronic
System Integration Center (MESIC) in USTC for EDA tools
support, Minqiang Chen, Dongcheng Xie and Shufeng Peng
for measurement support.
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Jin Wang received the B.S. degree in electronic science and technology from
the Huazhong University of Science and Technology, Wuhan, China, in 2017.
He is currently pursuing the M.Sc. degree with the University of Science and
Technology of China. His research includes the integration of MEMS gas
sensors and CMOS circuits.
Jiaqi Yang received the B.S. degree in electronic engineering from the
Nanjing University of Science and Technology, Nanjing, China, in 2012.
She is currently pursuing the Ph.D. degree with the Micro-/Nano-Electronic
System Integration R&D Center, Department of Electronic Science and
Technology, University of Science and Technology of China, Hefei, China.
Her current research interests include data converters and sensor interface.
Dongliang Chen received the B.S. degree in communication engineering from
Anhui University, Hefei, China, in 2013, and the M.Sc. degree from the Micro-
/Nano-Electronic System Integration R&D Center, Department of Electronic
Science and Technology, University of Science and Technology of China,
Hefei, in 2016. His research includes the digital integrated circuit.
Lele Jin received the B.S. degree in electronic engineering from the Hefei
University of Technology, Hefei, China, in 2013, and the M.Sc. degree from
the Micro-/Nano-Electronic System Integration R&D Center, Department of
Electronic Science and Technology, University of Science and Technology of
China, Hefei, in 2016. His research includes the data converters.
Yu Li received the B.S. degree in electronic science and technology
from the University of Science and Technology of China, Hefei, China,
in 2013, where he is currently pursuing the Ph.D. degree with the Micro-/
Nano-Electronic System Integration R&D Center, Department of Electronic
Science and Technology. His current research interests include digital inte-
grated circuit and digital communication system.
Yidan Zhang received the bachelor’s degree from the School of Physics and
Materials Science, Anhui University, China, where she is currently pursuing
the master’s degree. Her current research is focused on the rational design
and efficient synthesis of perovskite oxides as electrochemical sensor’s solid
electrolyte and oxygen reduction reaction for the metal-air batteries.
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IEEE SENSORS JOURNAL, VOL. 18, NO. 16, AUGUST 15, 2018
Lei Xu received the B.S. degree in electronic and information engineering
from Anhui Normal University, Wuhu, China, in 2007, and the Ph.D. degree
from the Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences, Shanghai, China, in 2012. Then, he joined the
No. 38 Research Institute, China Electronics Technology Group Corporation,
Hefei, China, where he was an Engineer in 2012 and a Senior Engineer
in 2015. He was a Visiting Scholar with the California Institute of Technology,
Pasadena, CA, USA, from 2014 to 2015. In 2016, he joined the University of
Science and Technology of China, Hefei, where he is currently a Professor
with the School of Information Science and Technology and the School of
Microelectronics. His research interests include MEMS gas sensors, MEMS
bio/medical sensors, odor identification, and neural signal detection.
Youmin Guo received the Ph.D. degree in chemical engineering from the
Nanjing University of Technology in 2011. She held a post-doctoral position
with the Institute of Researches on Catalysis and Environment in Lyon,
(IRCELYON-CNRS), France, from 2011 to 2014. In 2014, she joined the
School of Physics and Materials Science, Anhui University. Her research
interests include fuel cells, energy conversion device, and gas sensors.
Fujiang Lin (M’93–SM’99) received the B.S. and M.S. degrees in electrical
engineering from the University of Science and Technology of China (USTC),
Hefei, China, in 1982 and 1984, respectively, and the Dr.Ing. degree in elec-
trical engineering from the University of Kassel, Kassel, Germany, in 1993.
He was a Research Scientist with the National University of Singapore, Singa-
pore. In 1995, he was transferred to the Institute of Microelectronics (IME),
Singapore, as a Member of Technical Staff, where he pioneered practical
RF modeling for MMIC/RFIC development. In 1999, he joined HP EEsof,
as the Technical Director, where he established the Singapore Microelectronics
Modeling Center, providing accurate state-of-the-art device and package
characterization and modeling solution service worldwide. From 2001 to 2002,
he started up and headed Transilica Singapore Pte. Ltd., the Research And
Development Design Center, Transilica Inc., a Bluetooth and IEEE 802.11 a/b
wireless system-on-chip (SoC) company. The company was acquired by
Microtune Inc. After the close down of Transilica Singapore in 2002, he joined
Chartered Semiconductor Manufacturing Ltd. (now GlobalFoundries, second
largest foundry) as the Director, where he led the SPICE Modeling Team in
support of company business. In 2003, he rejoined IME as a Senior Member
of Technical Staff, where he focused on upstream research and development
initiatives and leadership toward next waves. His current research interests
include the development of CMOS as a cost-effective technology platform for
60-GHz band millimeter-wave SoC and millimeter wave therapy for healthcare
applications. As an Adjunct Associate Professor with the National University
of Singapore and an Adjunct Professor with USTC, he is actively involved
in educating and training post-graduate students. In 2010, he returned back
USTC as a Full Professor under the Chinese 1000 Talents Program, where he
is currently the Head of the Department Electronic Science and Technology.
He is also the Executive Director of the Micro-/Nano-Electronic System
Integration R&D Center, which is jointly established by USTC and IME.CAS.
He has authored or co-authored over 120 scientific papers. He holds seven
patents. His current research interests include modeling cum IC validation of
next-generation technology devices, such as GaN and FinFET. Dr. Lin has
been involved in the IEEE activities in different functions since 1995,
including the Chair of the IEEE Singapore MTT/AP Chapter, Committee
Member of the Singapore Section, Reviewer Board Member for a few of
transactions or journals, and a Technical Program Committee Member of
numerous conferences, such as RFIC and ESSCIRC. He is the initiator and
the co-organizer of international workshops and short courses at APMC99,
SPIE00, ISAP06, and IMS07. In 1995, he and his team initiated and
organized the IEEE International Symposium on Radio-Frequency Integration
Technology, Singapore, and now becomes the MTT-S fully sponsored flagship
conference in Asia. He was a recipient of the 1998 Innovator Award presented
by the EDN Asia Magazine.
 WANG et al.: GAS DETECTION MICROSYSTEM WITH MEMS GAS SENSOR AND IC
Feng Wu (M’99–SM’06–F’13) received the B.S. degree in electrical engi-
neering from Xidian University, Xi’an, China, in 1992, and the M.S. and
Ph.D. degrees in computer science from the Harbin Institute of Technol-
ogy, Harbin, China, in 1996 and 1999, respectively. He was a Principle
Researcher and Research Manager with Microsoft Research Asia, Beijing,
China. He is currently a Professor with University of Science and Technology
of China, Hefei, China. He has authored or co-authored over 200 high-
quality papers (including several dozens of the IEEE T RANSACTIONS papers)
and top conference papers on MOBICOM, SIGIR, CVPR, and ACM MM.
He holds 77 granted U.S. patents. His 15 techniques have been adopted into
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6773
international video coding standards. His current research interests include
image and video compression, media communication, and media analysis and
synthesis. He received the IEEE Circuits and Systems Society 2012 Best
Associate Editor Award. As a co-author, he received the Best Paper Award
at the IEEE T-CSVT 2009, PCM 2008, and SPIE VCIP 2007. He was
also the TPC Chair in MMSP 2011, VCIP 2010, and PCM 2009, and the
Special Sessions Chair at ICME 2010 and ISCAS 2013. He was an Associate
Editor of the IEEE T RANSACTIONS ON C IRCUITS AND S YSTEM FOR V IDEO
T ECHNOLOGY, the IEEE T RANSACTIONS ON M ULTIMEDIA, and several
other international journals.