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Role of Oxygen Vacancies on Resistive Switching with Rapid

Thermal Process in Bi-layer ZrO2/ZnO Bi-Layer Synaptic
Device

Journal: ACS Applied Materials & Interfaces

Manuscript ID am-2021-21588x

Manuscript Type: Article

Date Submitted by the

07-Nov-2021
Author:

Complete List of Authors: Song, Ki-Woo; Chungnam National University, Dept. Electronics Engi.
Sunil Babu, Eadi; Chungnam National University, Department of
Electronics Engineering
Choi, Hyun-Woong; Chungnam National University, Department of
Electronics Engineering
Kim, Seong-Hyun; Chungnam National University, Department of
Electronics Engineering
Nguyen, Kimthahn; Chungnam National University, Department of
Electronics Engineering
Ahn, Young-Jin; Chungnam National University, Department of
Electronics Engineering
Shin, Hyun-Jin; Chungnam National University, Department of
Electronics Engineering
Lee, Jong-Won; National NanoFab Center, Division of System IC
Development
Bae, Hee-Kyung; National NanoFab Center, Division of System IC
Development
Kwon, Hyuk-Min; Korea Polytechnics Anseong Campus, Department of
Semiconductor Processing Equipment
Lee, Hi-Deok; Chungnam National University, Dept. Electronics Engi.

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Role of Oxygen Vacancies on Resistive
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Switching with Rapid Thermal Process in Bi-
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14 layer ZrO2/ZnO Bi-Layer Synaptic Device
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17 Ki-Woo Song1, Sunil Babu Eadi1, Hyun-Woong Choi1, Seong-Hyun Kim1, Kim Thahn
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19 Nguyen1, Young-Jin An1, Hyun-Jin Shin1, Jong-Won Lee2, Hee-Kyung Bae2, Hyuk-Min
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22 Kwon3*, and Hi-Deok Lee1*
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25 Department of Electronics Engineering, Chungnam National University, 99, Daehak-ro,
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27 Yuseong-gu, Daejeon, Republic of Korea
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30 Division of System IC Development, National Nano Fab Center, 291, Daehak-ro, Yuseong-
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32 gu, Daejeon, Republic of Korea
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Department of Semiconductor Processing Equipment, Semiconductor Convergence Campus
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of Korea Polytechnic College, 41-12, Songwon-Gil, Kongdo-Eup, Anseong, Kyunggi-Do,
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39 Republic of Korea
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41 Correspondence to H. M. Kwon and H. D. Lee (E-mails: hmkwon@kopo.ac.kr and
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43 hdlee@cnu.ac.kr)
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48 ABSTRACT
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50 Bi-layer ZrO2/ZnO synaptic devices was proposed for the implementation of neuromorphic
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systems. The high electron conductivity of the ZnO layer in bi-layer memristive devices was
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55 used to easily form conduction filaments. Rapid thermal processing (RTP) treatment easily
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57 controlled the oxygen vacancy concentration in the ZnO layer, and the results were analyzed
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59 using X-ray photoelectron spectrometer (XPS). With 400°C RTP in N2 ambient, the uniform
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distribution of VSET and VRESET or high and low resistance states was significantly improved.
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7 The bi-layer ZrO2/ZnO synaptic devices could emulate the potentiation and depression
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9 functions of oxygen vacancy migration/diffusion for neuromorphic computing because the V0
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11 in the ZnO layer could be adjusted by the temperature of RTP treatment. Therefore, it can
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14 significantly and essentially improve the resistive switching mechanism, the uniformity, and
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16 the long-term potentiation and depression characteristic for the realization of neural network
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18 accelerators and neuromorphic systems.
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26 KEYWORDS
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30 memristor; oxygen vacancies; rapid thermal process; neuromorphic systems; synaptic
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32 behavior; long-term potentiation and depression (LTP and LTD)
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INTRODUCTION
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8 The success of the semiconductor industry has resulted in an exponential increase in
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computational power in traditional computing technologies.1,2 The exponential growth of data
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13 consumed significantly large computing resources, posing a significant challenge to the
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15 traditional Von Neumann architecture-based digital computers. Because of their data-intensive
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nature and the Von Neumann bottleneck in the architecture, current digital computing
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20 technologies are unsuitable for dealing with Artificial Intelligence and Big Data analytics.
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22 Because of the limitations of integration density and energy dissipation, it has become
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24 necessary to develop neuromorphic computing technologies based on neural networks rather
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27 than conventional computing technologies as interest in future computing technologies
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29 increases.3–6 The adjustable two-terminal resistive switching devices based on a crossbar
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31 structure stand out as promising opportunities for developing new structures capable of
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emulating neuromorphic functions, such as electronic synapses, which can maintain their
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36 internal resistance states depending on the applied voltages or currents.7–9 The unique
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38 properties of memristors can simultaneously offer its key advantages such as nonvolatile
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characteristics, nanoscale size, low power consumption, faster response, and excellent
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43 compatibility with CMOS processes.10–12 Additionally, the memristor is a simple-structured
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45 device consisting of metal-insulator-metal and has attracted much attention for in-memory
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47 computing that can replace commercialized memory, dynamic random access memory, and
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50 flash memory.13,14 The resistive switching materials, as well as the top and bottom electrode
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52 materials, have significantly determined the phenomenon and performance of resistive
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54 switching devices.15,16 Among many resistive switching materials, such as hafnium oxide
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(HfO2), zirconium dioxide (ZrO2), tantalum oxide (Ta2O5), aluminum oxide (Al2O3), and
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59 titanium oxide (TiO2), the oxide-based memristors have attracted the ability to form conduction
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filaments based on the migration of oxygen vacancy (V0) or oxygen ion (O2−) at the metal-
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7 oxide interface or bulk of resistive switching materials by externally applied electrical
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9 fields.17,18 Therefore, controlling the migration of V0 or O2− in resistive switching materials is
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11 an important factor for the performance of the oxide-based memristors.19,20 However, the
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14 operation mechanism by the migration of V0 or O2− in memristive devices causes fundamental
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16 problems that disrupt device stability and uniformity properties such as cycle to cycle, a device
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18 to device resistive switching variations.21–23 These issues are closely related to the thermal
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processing conditions of oxide-based memristors for resistive switching materials.24,25 Post
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23 deposition annealing is required because it improves device performance, film properties, and
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25 reduces current leakage; it can also cause oxide regrowth in oxide-based memristors and has a
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strong influence on the defect sites within resistive switching materials.26,27 Therefore, rapid
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30 thermal processing (RTP) is critical for improving the quality of dielectric film properties
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32 during short time annealing because it can provide significant advantages for controlling
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34 oxygen vacancy within resistive switching materials.28–30 However, the contributions of the
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37 resistive switching mechanism on RTP treatment have yet to be systematically studied.
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In this study, we investigated the resistive switching mechanism and long term potentiation
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43 (LTP) and long term depression (LTD) characteristics of a single layer ZrO2 and bi-layer
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45 ZrO2/ZnO without RTP, and bi-layer ZrO2/ZnO with 400°C RTP. XPS was used to analyze the
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47 oxygen vacancy concentration of each layer for bi-layer ZrO2/ZnO memristive devices as RTP
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50 treatment temperature increased. RTP treatment improved the uniformity distribution of VSET
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52 and VRESET or high-resistance state (HRS) and low-resistance state (LRS), which can be
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54 controlled by the change of the V0 in the ZnO layer during RTP treatment. In particular, the
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number of applied positive and negative pulses can control the synaptic response in the form
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59 of potentiation or depression, which depended on the input-spiking signals.
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EXPERIMENTAL DETAIL
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7 As shown in Figure 1a, a single square structure memristor was fabricated. Ti and Pt metal
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9 were deposited on the Si/SiO2 substrate with a thickness of 10 and 100 nm using an E-Beam
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11 evaporator. The Ti layer was used to improve the weak adhesion of SiO2, and the bottom
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14 electrode Pt metal. At a chamber temperature of 200°C, an atomic layer deposition system was
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16 used to deposit a 3 nm ZrO2 layer as the HRS using TEMAZr
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18 (tetrakis(ethylmethylamino)zirconium, Zr[N(CH3)(C2H5)]4) and an H2O of source precursors
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on the bottom electrode. Then, a 5 nm ZnO layer as the LRS was deposited by atomic layer
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23 deposition system using DEZn (diethylzinc, Zn(C2 H5)2) and an H2O of source precursors at a
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25 chamber temperature of 80°C. After ZnO deposition, it was subjected to rapid thermal
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annealing processes. Some samples were annealed at 300°C, 400°C, 500°C, and 600°C for 30
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30 s in N2 ambient to verify the V0 change of resistive switching materials as a function of
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32 annealing temperature. Finally, the Pd layer was deposited as the top electrode using a radio
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34 frequency sputtering system and patterned with photolithography using the lift-off process to
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37 form a square type device. Top-view images of a field emission scanning electron microscope
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39 (FE-SEM) in memristive devices were shown in Figure 1b.
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41 The electrical performance for single and bi-layer ZrO2/ZnO memristors was measured using
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the Keysight B1500A semiconductor device analyzer. The current compliance was used during
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46 the I-V measurements of memristive devices to limit the current through the memristor to
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48 prevent damage when the memristive devices transitioned from HRS to LRS. The Keysight
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B1500A semiconductor device analyzer’s B1530 option was used to perform long-term
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53 sampling measurements. The B1530 was an arbitrary waveform generator and fast
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55 measurement unit that allowed for the application of pulse signals down to 100 ns and the
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57 precise current measurement at a sampling rate of 50 ns. The voltage pulses were applied across
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60 the memristive devices, which were connected in series with a resistor, and the current was

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simultaneously monitored. To study the pulse responses, a train of rectangular pulses of 3.2 V
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7 amplitude, 400 ns pulse width, and a short duration (2 ms) was used with a read voltage of 0.1
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9 V to minimize disturbance on device conductance. For the analysis of the potentiation and
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depression characteristics of bi-layer ZrO2/ZnO memristors, 200 pulses were applied
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14 respectively, and the current was measured after each stimulation pulse. In addition, by
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16 applying 100 pulses repeatedly, we confirmed the repetitive potentiation and depression
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18 characteristics of the memristor. The Agilent Easy Expert software controls all equipment.
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23 RESULTS AND DISCUSSION
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25 Figures 2a–d show the cross-sectional transmission electron microscope (TEM) images of
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28 the Ti/Pt/ZrO2/ZnO/Pt memristive devices. The film thickness of ZrO2 and ZnO layer in bi-
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30 layer ZrO2/ZnO memristive devices with 400°C RTP in N2 ambient is 3 and 5 nm, respectively,
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32 confirming that there is no visible change after RTP treatment. The result of the energy-
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dispersive X-ray spectroscopy (EDS) line-scan to confirm the chemical elements in the
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37 Ti/Pt/ZrO2/ZnO/Pt memristive device is shown in Figure 2e. The element distributions of Zn
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39 and Zr are observed between top electrode and Pt bottom electrode metal layers, which is
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41 consistent with the HRTEM analysis. Any chemical elements of the top or bottom electrode
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44 metal are not observed on the intrinsic ZrO2/ZnO oxide-based memristors, which can be
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46 attributed to the operating mechanism by V0 migration/diffusion. The depth profiles of the bi-
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48 layer ZrO2/ZnO memristors and the narrow-scan spectra O 1s peaks in ZnO and ZrO2 layers
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51 using XPS without and with RTP annealing are shown in Figure 3a–d. The O 1s spectra from
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53 ZnO and ZrO2 layers can be deconvoluted into two peaks. The binding energy of O 1s spectrum
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55 peak corresponding to Zn-O and Zr-O bonding in ZnO and ZrO2 layers was 529.2 and 530.1
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eV, respectively, which agrees with the recently reported ZnO and ZrO2 values.31,32 The peaks
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percentage is calculated from the area proportion of the peak to verify the resistive switching
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7 mechanism. The slightly higher energy of 531.5 eV in the O 1s spectrum peak, which has the
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9 most significant effect on the resistive switching oxide-based memristors, is attributed to the
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11 oxygen vacancies in ZnO and ZrO2 layers.33 The percentage of oxygen vacancies of the bulk
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14 of ZrO2 and ZnO layers depending on the RTP temperature is observed in Figure 3e. The
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16 percentage of oxygen vacancies of the ZrO2 layer does not change depending on the RTP
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18 temperature whereas that of the ZnO layer increases as the RTP temperature increases except
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for over 450°C. The oxygen vacancy concentration of the ZnO layer is the highest when RTP
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23 is performed at 400°C. Each chemical element obtained through the component analysis plays
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25 an important role in the resistive switching performance.
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Figure 4 shows typical bipolar resistive switching characteristics for various cycles for a
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30 single ZrO2 and bi-layer ZrO2/ZnO memristors without and with the RTP annealing. On
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32 consecutive I-V sweeps, the VSET varies significantly, whereas the VRESET remains relatively
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34 constant. During the forming process, O2− diffused rapidly from the bottom electrode metal
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37 toward the ZnO bulk and the top electrode metal by the applied electrical field as shown in
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39 Figure 5b and c. At this time, oxygen vacancies are generated in the ZrO2 layer and act as the
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41 formation of conduction filaments, indicating that bi-layer ZrO2/ZnO memristive devices
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increase the conductance. The O2− generated by the applied negative electrical field during the
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46 reset process is recombined with the oxygen vacancies which are already formed by conduction
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48 filaments in the ZrO2 and ZnO bulk (Figure 5d). A schematic illustration of the repeated
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resistive switching process in memristive devices is shown in Figure 5e and f. Because the
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53 uniformity of VSET and VRESET is an important factor in neuromorphic computing technologies,
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55 Figure 6a shows the statistical results of the distribution and cumulative probability of HRS
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57 and LRS measured from a single memristor unit during 50 consecutive I-V sweeps, where HRS
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60 and LRS are extracted by the read voltage at ±0.1 V.34 The standard deviations normalized to

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the mean resistance at VSET for a single ZrO2, bi-layer ZrO2/ZnO without RTP and bi-layer
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7 ZrO2/ZnO with 400°C RTP are 0.39, 0.42, and 0.22, respectively, whereas that at VRESET are
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9 0.05, 0.07, and 0.05, respectively. The distribution of the obtained VSET and VRESET for cycle
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11 to cycles during 50 consecutive I-V sweeps, which can confirm a clear resistance window is
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14 shown in Figure 6b–e. The distribution of VRESET is uniform with little deviation, whereas that
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16 of VSET shows greater deviation as the number of cycles increases. However, the distribution
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18 of the VSET for bi-layer ZrO2/ZnO with 400°C RTP shows more improvement than that of the
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VRESET for a single ZrO2 and bi-layer ZrO2/ZnO without RTP treatment, which can be affected
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23 by the change of the V0 in the ZrO2 and/or ZnO layer by RTP treatment. As previously
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25 discussed, according to the results of the XPS analysis, the oxygen vacancy concentration of
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the ZnO layer increases with increasing RTP temperature more than that of the ZrO2 layer.
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30 Therefore, the formation and destruction of conduction filaments in bi-layer ZrO2/ZnO
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32 memristors play a significant role in the change of the V0 in the ZnO layer, which can be
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34 adjusted using RTP treatment. It can significantly and essentially improve the uniform
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37 distribution of VSET and VRESET or HRS and LRS for developing successful neuromorphic
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39 hardware.
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41 Figure 7 shows LTP and LTD characteristics for bi-layer ZrO2/ZnO with 400°C RTP to
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confirm the role of V0 migration/diffusion on synaptic behavior. At 400°C RTP, 200
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46 consecutive pulses with 3.2 V amplitude and 400 ns pulse width are applied for bi-layer
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48 ZrO2/ZnO memristors with 400°C RTP and the conductance for LTP is measured at a read
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voltage with 0.1 V and 2 μs pulse width immediately after each pulse. The amplitude of pulses
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53 is reversed at the same width condition, and a read voltage for LTD is applied. The LTP and
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55 LTD characteristics are not linearly proportional to synaptic weight depending on the input-
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57 spiking signal and the memristive device conductance shows a gradual increase or decrease in
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post-neurons, synaptic weight potentiation should be a saturated value to avoid excessive
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7 neuron excitability (Figure 7b).36–38 The nonlinearity in the LTP and LTD characteristics is
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9 similar to those reported in other oxide-based memristive devices.39,40 Figure 7c shows the
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11 synaptic response in the form of the potentiation or depression after the implementation of the
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14 repeated cycles of the potentiation (positive bias) and depression (negative bias) when every
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16 100 pulses are applied. The conductance for every cycle in LTP remains constant, whereas the
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18 conductance in LTD decreases with the increase in each cycle. Note that the number of applied
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positive and negative pulses can accurately control the synaptic 100 weight states depending
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of oxygen vacancy migration/diffusion for neuromorphic systems.
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32 CONCLUSIONS
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34 We demonstrated the resistive switching mechanism, oxygen vacancy functions, and
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37 LTP/LTD characteristics for bi-layer ZrO2/ZnO for neuromorphic systems. The ZnO layer was
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39 used in bi-layer memristive devices to provide high electron conductivity, which can be easily
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41 injected to charge carriers to form conduction filaments. We investigated the resistive switching
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mechanism using an XPS depth profile at each layer for bi-layer ZrO2/ZnO memristive devices
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46 as the RTP treatment temperature increases. The uniformity distribution of VSET and VRESET or
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48 HRS and LRS was improved with 400°C RTP. Furthermore, because the V0 in the ZnO layer
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can be adjusted using RTP treatment, the bi-layer ZrO2/ZnO can emulate the potentiation and
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treatment. (e) Energy-dispersive X-ray spectroscopy (EDS) line-scan to confirm chemical
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5 M-O Peak
(a) (b) O1s (c)
M-O Peak M-O Peak
O1s OV Peak OV Peak O1s OV Peak
6 Fitting Line Fitting Line
ZnO1-x (400 ℃) Fitting Line
ZnO1-x Layer ZnO1-x (300 ℃)
7 Layer Layer
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11 M-O Peak M-O Peak M-O Peak
12 O1s OV Peak O1s OV Peak O1s OV Peak
Fitting Line Fitting Line Fitting Line
13 ZrO2 Layer ZrO2(300 ℃) ZrO2(400 ℃)
Layer Layer
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536 534 532 530 528 526 536 534 532 530 528 526 536 534 532 530 528 526
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Binding Energy [eV] Binding Energy [eV] Binding Energy [eV]
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(d) (e)
ZrO2
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80 ZnO
21 50 C1s
Atomic % [%]

V0 Rate [%]

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O1s
Pt4f 60
23 30
Zn2p
Zr3d 40
24 20
20
25 10
26 0
0 3 6 9 12 15
0
0 200 400 600
27 Etch Time [s] Temperature [°C]
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30 Figure 3. XPS spectra of O1s of ZnO and ZrO2 layers in bi-layer ZrO2/ZnO memristive devices.
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33 Fitting results of oxygen vacancy and metal-oxygen (a) without RTP, (b) 300°C RTP, and (c)
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35 400°C RTP in N2 ambient. (d) XPS depth profiling spectra of chemical elements as a function
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37 of an etch time in bi-layer ZrO2/ZnO memristive devices. (e) Oxygen vacancy concentration
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was determined from XPS spectra of ZnO and ZrO2 layers depending on the RTP temperature.
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5 (a) (b)
0 0
6 10 10
7 -2 Single Layer -2 Bi-Layer
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9 10
-4
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-4
Current [A]

Current [A]
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-6 -6
11 10 10
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-10 1st cycle 10
-10
1st cycle
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-12 -12
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18 Voltage [V] Voltage [V]
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0 0
21 10 10
22 -2 Bi-Layer RTP 300 ℃ -2 Bi-Layer RTP 400 ℃
23 10 10
24 -4 -4
10 10
Current [A]

Current [A]

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-6 -6
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10 50th cycle 10
30 50th cycle
-12 -12
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32 -2 -1 0 1 2 3 4 5 -2 -1 0 1 2 3 4 5
33 Voltage [V] Voltage [V]
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37 Figure 4. Typical bipolar resistive switching characteristics with various cycles for (a) a single
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39 layer ZrO2, and bi-layer ZrO2/ZnO memristive devices (b) without RTP, (c) with 300 °C RTP,
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27 Figure 5. Schematic illustration of the resistive switching mechanism in bi-layer
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29 Ti/Pt/ZrO2/ZnO/Pt memristive devices. (a) Initial state as the high‐resistance state (HRS), (b)
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(e-f) Repeatability of the resistive switching process in memristive devices.
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5 (a) (b)
99.5 40
6 98 Pt/ZrO2/Pd

7 90 30
Pt/ZrO2/ZnO/Pd

Probability [%]
Pt/ZrO2/ZnO/Pd (400 °C)
8

Counts [#]
70
9 50 ~104 20
30
10
10 Pt/ZrO2/Pd 10
11 Pt/ZrO2/ZnO/Pd
2
12 0.5
Pt/ZrO2/ZnO/Pd(400 °C)
0
13 1 100 10k1M 100M 10G -2 -1 0 1 2 3 4
Resistance [W] Voltage [V]
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15 (c) (d) (e)
4 4 4
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17 2 2 2
18
Voltage [V]

Voltage [V]
Voltage [V]

σ = 0.39 σ = 0.42 σ = 0.21

19 0 0 0
20
σ = 0.05 σ = 0.07 σ = 0.05
21 -2 VSET -2 VSET -2 VSET
Single Layer Bi-Layer Bi-Layer RTA 400 ℃
22 VRESET VRESET VRESET
-4 -4 -4
23 0 10 20 30 40 50 0 10 20 30 40 50 0 10 20 30 40 50
24 No. Cycle [#] No. Cycle [#] No. Cycle [#]
25
26
27 Figure 6. (a) Statistical results of cumulative probability of HRS and LRS measured from a
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single memristor unit by the read voltage at ±0.1 V during 50 consecutive I-V sweeps. (b)
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32 Distribution of obtained VSET and VRESET, confirming a clear resistance window. Distribution
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34 of the obtained VSET and VRESET on cycle to cycles for (c) a single layer ZrO2, (d) bi-layer
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36 ZrO2/ZnO memristive devices without RTP, and (e) bi-layer ZrO2/ZnO memristive devices
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39 with 400°C RTP in N2 ambient during consecutive 50 times I-V sweeps.
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5 (a) (b)
4.5
6 LTP
200 Cycle
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7 4.0 LTD 400 ns
Conductance [mS]

Conductance [mS]
8 3.2 V
2 µs 5
9 3.5 NL = 7.31 % NL = 4.88 % 0.1 V
4
10
3.0 200 Cycle
11 -0.1 V 3 400 ns

12 2.5 -3.2 V
2 µs 2 µs
3.3 V
3.5 V
13 2 0.1 V 3.7 V

14 2.0 400 ns
0 100 200 300 400 0 50 100 150 200
15 Pulse Number [#] Pulse Number [#]
16
17 (c)
4.5
18 5.23 % 2.98 %
100 Cycle
4.31 % 4.02 % 2.68 %
19 400 ns
Conductance [mS]

4.0
20 3.2 V
2 µs

21 0.1 V

22 3.5
100 Cycle
23 4.51 % -0.1 V
3.85 %
24 3.0 4.22 %
-3.2 V
5.26 % 5.24 % LTP 2 µs
25 LTD
400 ns
26 2.5
0 200 400 600 800 1000
27
Pulse Number [#]
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Figure 7. (a) Gradual conductance modulation of long-term potentiation and depression(LTP
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32 and LTD) characteristics of bi-layer ZrO2/ZnO with 400°C RTP in N2 ambient. (b)
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34 Conductance saturation characteristics of bi-layer ZrO2/ZnO memristive devices under a series
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36 of positive pulses with different voltage amplitude. (c) Synaptic response of bi-layer ZrO2/ZnO
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39 memristive devices on repeated cycles of the potentiation (positivebias) and depression
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41 (negative bias).
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AUTHOR INFORMATION
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7 Corresponding Authors
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9
10 Hyuk-Min Kwon − Department of Semiconductor Processing Equipment, Semiconductor
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12 Convergence Campus of Korea Polytechnic College, 41-12, Songwon-Gil, Kongdo-Eup,
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15 Anseong, Kyunggi-Do, Republic of Korea; Email: hmkwon@kopo.ac.kr
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17
Hi-Deok Lee − Department of Electronics Engineering, Chungnam National University, 99,
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20 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea; Email: hdlee@cnu.ac.kr
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22
23
24
25 Authors
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27
28 Ki-Woo Song − Department of Electronics Engineering, Chungnam National University, 99,
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Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea;
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32
33 Sunil Babu Eadi − Department of Electronics Engineering, Chungnam National University,
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99, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea;
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38 Hyun-Woong Choi − Department of Electronics Engineering, Chungnam National
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41 University, 99, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea;
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43
Seong-Hyun Kim − Department of Electronics Engineering, Chungnam National University,
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46 99, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea;
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Kim Thahn Nguyen − Department of Electronics Engineering, Chungnam National
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51 University, 99, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea;
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54 Young-Jin An − Department of Electronics Engineering, Chungnam National University, 99,
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56 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea;
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Hyun-Jin Shin − Department of Electronics Engineering, Chungnam National University,
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7 99, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea;
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Jong-Won Lee − Division of System IC Development, National Nano Fab Center, 291,
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12 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea;
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15 Hee-Kyung Bae − Division of System IC Development, National Nano Fab Center, 291,
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17 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea;
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24 Notes
25
26 The authors declare no competing financial interest.
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34 ACKNOWLEDGMENT
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37 This work was supported by a National Research Foundation of Korea (NRF) grant funded
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39 by the Korean government (MSIT; Ministry of Science and ICT) (No. 2020R1F1A1068242).
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42 This work was also supported in part by the Ministry of Education of the Republic of Korea
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45 and the National Research Foundation of Korea (NRF－2019S1A5C2A03081332).
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