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Aqueous Materials For Advanced Lithography
Aqueous Materials For Advanced Lithography
Advanced Lithography
Strategic Materials Conference Taiwan 2019
Yi Cao
Taipei, 9/19/2019
Agenda
2 Aqueous materials for advanced lithography | Strategic Materials Conference Taiwan | Sep. 19, 2019
01 Overview and
product
roadmap
Merck Performance Materials – Semiconductor Solutions
Our solutions enable electronic industry
Mobile Devices
Patterning Dielectric Deposition
materials materials materials
Servers for
Big Data
• smaller structures to continue Moore’s law
193i LEx2
120
FINFET
100
193i LEx3
32nm
EUV SE
High NA EUV SE
28nm
80
EUV LEx2
60 20/22nm 14/16nm
40
10nm
7nm
5nm
20 3nm
2nm
0
2009 2011 2013 2015 2017 2019 2021 2023 2025
5 Aqueous materials for advanced lithography | Strategic Materials Conference Taiwan | Sep. 19, 2019
Commercial product
Lithography & cleaning materials roadmap Development stage
15 16 17 18 19 20 21 22 23 24 25
Logic 14nm 10nm 7nm 5nm 3nm? 2nm?
DRAM 20nm 1X 1Y 1Z 1? & beyond
2D NAND 15/16nm 14nm 12nm?
3D NAND 32/36L 48L 64/72L 92/96L 128L 256L& beyond
TARC (i-line /KrF)
OBARC (KrF/ArF/ArF-i)
Generic SOC
Patterning KrF/i-line Thick Film Resists
Specialty SOC
Metal Hard Mask / EPL
DSA
6 Aqueous materials for advanced lithography | Strategic Materials Conference Taiwan | Sep. 19, 2019
02 Rinse
materials
Rinse materials
Concept
8 Aqueous materials for advanced lithography | Strategic Materials Conference Taiwan | Sep. 19, 2019
Rinse materials
The process and benefits
Exposed
Key Benefits
✓ Straightforward process
✓ Defect reduction
10 Aqueous materials for advanced lithography | Strategic Materials Conference Taiwan | Sep. 19, 2019
Rinse materials
Material design
Considerations
• Resist chemistry
Ideal Pattern CD-shift Bridging Melting • Loading of surfactants
• Bulkiness of surfactants
• Melting control
• Functionality
11 Aqueous materials for advanced lithography | Strategic Materials Conference Taiwan | Sep. 19, 2019
Rinse materials – ArF
Commercial products
Introduction of melting
inhibitor
12 Aqueous materials for advanced lithography | Strategic Materials Conference Taiwan | Sep. 19, 2019
Rinse materials
EUV Rinse – development roadmap
Gen. 3
SPC-75x
✓ Nanobridges
SPC-7xx
Gen. 1 ✓ Improved process margin
& PR compatibility
SPC-6xx
Prototype
Extreme 1x
13 Aqueous materials for advanced lithography | Strategic Materials Conference Taiwan | Sep. 19, 2019
Rinse materials
Lithographic performance on EUV Resist B
Dose
Low High
Minus
Focus
Plus
14 Aqueous materials for advanced lithography | Strategic Materials Conference Taiwan | Sep. 19, 2019
Rinse materials
Lithographic performance on EUV Resist C
Process conditions
Exposure tool: NXE3300 (0.33NA, Dipole)
EUV Resist C / 35nm thick (16/nm hp)
Dose: 53 mJ/cm2 center / 2.0mJ/cm2 step
Focus: 0.04um center / 0.02um step
Dose
Low High
Minus P32V16 37 39 41 43 45 47 49 51 53 57 59 61 63 65 67 69 71 P32V16 37 39 41 43 45 47 49 51 53 55 57 59 61 63 65 67 69 P32V16 37 39 41 43 45 47 49 51 53 55 57 59 61 63 65 67 69
0 0 0
22.11 21.32 20.07 19.03 18.14 17.31 16.54 15.71 14.87 14.14 13.27 12.79 22.32 21.5 20.34 19.32 18.55 17.65 16.89 16.08 15.3 14.57 13.79 13.19 22.43 21.71 20.57 19.62 18.77 17.87 17.08 16.35 15.46 14.75 13.95 13.18
Focus
0.02 0.02 0.02
22.21 21.19 20.08 19.12 18.24 17.41 16.53 15.77 14.97 14.35 13.65 12.81 22.34 21.43 20.35 19.44 18.54 17.81 16.94 16.15 15.43 14.7 14.06 13.32 12.53 22.51 21.59 20.59 19.6 18.82 18.01 17.1 16.42 15.67 14.96 14.28 13.53 12.76
Plus
0.12 0.12 0.12
19.03 18.15 17.23 16.41 15.62 14.93 14.03 13.23 12.49 19.26 18.3 17.51 16.67 15.92 15.14 14.31 13.41 12.55 19.49 18.58 17.77 16.94 16.17 15.42 14.65 13.72 12.75 12.21
80 Specific
Invisible Defect Density (pcs/cm2) 0.66 0.26 0.18
60
Collapse Fall on Bridge Pinching Specific
42 [32]
40 Defect
29 [26]
type
20
0
✓ Pattern collapse dominates in regular process.
DIW Gen. 2 Gen. 3 ✓ Rinse process is effective in eliminating defects.
*[]: Defect count excluding invisible
✓ Pinching defects are reduced with rinse process.
16 Aqueous materials for advanced lithography | Strategic Materials Conference Taiwan | Sep. 19, 2019
Summary
• Rinse materials offer benefits of pattern collapse mitigation and defect improvement,
therefore, superior process margins for yield improvement.
• Merck offers rinse materials for both ArF and EUV lithography processes.
• Rinse process has been implemented in volume production of the first generation of
EUV lithography.
• 16nm half pitch is resolved with rinse process with sufficient pattern collapse margin.
• Collaborating with TEL, Merck offers not only innovative materials but also expertise in
process optimization.
17 Aqueous materials for advanced lithography | Strategic Materials Conference Taiwan | Sep. 19, 2019
03 Chemical
shrink
materials
Shrink materials
The process & mechanism ADI
(After Development Image)
ADI
Resist SHM
SHM
SHM
Substrate
ASI
(After Shrink Image)
Mixing layer
MB
Substrate
Insoluble in DIW
• Constant shrinkage through pitch
DIW dev. • Whole track compatible process
Substrate • In-process tunable shrinkage
• Reduced Cost of Ownership
Shrinkage
19 Aqueous materials for advanced lithography | Strategic Materials Conference Taiwan | Sep. 19, 2019
Shrink materials
Shrinkage controllability
ADI
Shrink Process
Film thickness:100nm
Mixing Bake: 110, 130, 150°C/ 60sec Top Image
Development: DI-Water
16
CD (nm) 65.5
12
Top Image
10
20 Aqueous materials for advanced lithography | Strategic Materials Conference Taiwan | Sep. 19, 2019
Shrink materials
Local CD uniformity
Focus vs shrinkage
Grid hole: 110nm pitch 25
20
Shrinkage (nm)
15
10
5 NSM-314
NSM-530
0
-0.2 -0.15 -0.1 -0.05 0
NSM-314 Focus (um)
CDU Improvement
60%
NSM-530 50%
40% NSM-314
NSM-530
30%
-0.2 -0.15 -0.1 -0.05 0
Focus (um)
21 Aqueous materials for advanced lithography | Strategic Materials Conference Taiwan | Sep. 19, 2019
Shrink materials
Proximity effects
ID bias =1.2
Pitch Pitch
ID bias =2.2
ID bias =3.2
ID bias =1.6
ID bias
Significantly higher shrinkage and lower iso-dense bias are achieved with NSM-530.
22 Aqueous materials for advanced lithography | Strategic Materials Conference Taiwan | Sep. 19, 2019
Shrink materials
Resist compatibility
Test conditions
NTD resists from multiple suppliers
Shrink: 1st Gen shrink material and NSM-314
Mixing Bake: 150°C/60sec
Development: DIW
20
Shrinkage (nm)
10
0
AX2110 Resist A Resist B Resist C
23 Aqueous materials for advanced lithography | Strategic Materials Conference Taiwan | Sep. 19, 2019
04 Summary
Summary
• Rinse process has bee proven effective in mitigating pattern collapse, improving process
margin, and depressing defectivity in multiple generations of lithography.
25 Aqueous materials for advanced lithography | Strategic Materials Conference Taiwan | Sep. 19, 2019