High-NA EUV Optics

High-NA EUV Optics – the Key for Miniaturization
of Integrated Circuits
in the Next Decade
Bartosz Bilski, Heiko Feldmann, Paul Gräupner, Peter Kürz, Winfried Kaiser
Carl Zeiss SMT GmbH, Germany

bartosz.bilski@zeiss.com
September 24th, 2019
ESSCIRC/ESSDERC 2019, Cracow, Poland 1 of 43

Reminder
This session’s theme is…

„Advanced Semiconductor Process & Device Technologies in Europe”
For this talk this means that…

High-NA lithography is the key to extending the life of Moore’s Law into the next decade
Currently only Europe has the competence to deliver high-NA EUV systems
High-NA (optics) is really challenging yet remarkable advanced piece of technology
These are interesting times for a lithographer!
Bartosz Bilski, Heiko Feldmann, Paul ESSCIRC/ESSDERC 2019, Cracow, Poland 2 of 43

Gräupner, Peter Kürz, Winfried Kaiser
Outline
1 | A little history + basics of lithography
2 | EUV lithography is the future
3 | The fascinating world of high-NA optics
4 | Where are we today?
5 | Looking beyond

Outline
5 | Looking beyond

Let’s talk Moore’s Law again!
half-pitch [nm]
1.000
For an imaging engineer, this is a success
story of this relatively simple equation:
100
but also:
 $ / transistor
 € / transistor
10  PLN (złoty) / transistor
 złoty / function
 Watt / function
… Decades of continued shrink! Ernst Abbe
1
1985 1990 1995 2000 2005 2010 2015 2020 2025
year
Ernst Abbe
The cornerstone equation of the microscopic image formation theory

picture by Bernd Geh

Ernst Abbe

Critical Dimension = k1 λ/NA

The fundamental equation of the
lithographic image formation theory
Abbe–Lin equation
move out from

the denominator
= numerical aperture (NA)
and generalize
Ernst Abbe

Critical Dimension = k1 λ/NA

The fundamental equation of the
lithographic image formation theory
Abbe–Lin equation
Three knobs to shrink the Critical Dimension:

 reduce wavelength λ
 increase numerical aperture NA
 reduce lithographic factor k1

Critical Dimension = k1 λ/NA We are not infinitely flexible, though
Abbe–Lin equation
=NA
refractive index
image space
*
NA < image-side refractive index k1 > ¼
half-pitch [nm]
exposure wavelength [nm]
1.000
436, g-line
365, i-line
248, KrF
NXT:1950i
193, ArF
100 NA = 1.35
NXE:3400 1/
XT:1400 14×
EUV benefit
NA = 0.33
NA = 0.93
13.5, EUV
10
CDmin = 13 nm @k1 = 0.32
EXE:5000
high-NA EUV lithography NA = 0.55 CDmin = 8 nm @k1 = 0.32
the subject of this talk
1 High-NA EUV lithography
1985 1990 1995 2000 2005 2010 2015 2020 2025 breaks 10 nm resolution limit
year
in a single exposure.
Moore’s Law is well and alive
source: anandtech.com
source: anandtech.com source: c't / Florian Müssig
tsmc keynote | Hot Chips: A Symposium on High Performance Chips

Outline
5 | Looking beyond

The (historical) perspective
1995 2003 2006 2009 2012 2015 2018 2021
MET (Micro Exposure Tool)
EUV Lithography reaches

ADT (α-Demo Tool) Starlith® 3100 maturity and enters production
fabs as a high-volume
manufacturing tool
NA = 0.25
Starlith® 3300 Starlith® 3400
2019
NA = 0.33
↓ start of development
High-NA EUV: Starlith® 5000
NA = 0.55

EUV lithography is in production now
source: notebookcheck.net
source: Intel
source: hothardware.com

EUV lithography is in production now 2020??
4.5 M
Cumulative number of exposed EUV wafers
3.8 M
More than
2.0 M 4.5 million wafers
run since 2011
1.1 M
0.6 M
source: ASML
2011
2011 2012 2013
2013 2014 2015 2017 2018 2019
2015 2016 2017 2019
year

Outline
5 | Looking beyond

EUV lithography system
However
source EUV is absorbed by everything
refractive optics
illumination optics reflective optics (mirrors)
normal incidence
reticle (mask)
oblique incidence
projection optics
wafer
A more realistic example of a litho lens

EUV lithography system
However
source EUV is absorbed by everything
mask refractive optics
illumination
illumination optics reflective optics (mirrors)
normal incidence
reticle (mask) everything in vacuum oblique incidence
→ NA < 1
projection optics
projection
wafer
from EUV source
wafer design principle

EUV projection optics
Multilayer reflectivity [%]

80
60
Si 40× 40
Mo 20
Bragg-reflectors 0
0 5 10 15 20
Θ [˚]
source: ASML
substrate
Even when we can’t have normal incidence,

we need to keep angles in the design small.
design principle, not the actual design
High-NA
NXE 3400 with High-NA
NA=0.55
NA=0.33
obscuration NA=0.55
Multilayer reflectivity [%]
80
60
40
20
0
0 5 10 15 20
wafer wafer
Θ [˚]
source: ASML
incidence angles higher incidence angles in general

within reason
higher incidence angle variation
design principle, not the actual design
NEW
Eelco van Setten et al., High NA EUV lithography: Next step in EUV imaging
(a SPIE Advanced Lithography 2019 paper)

NA = 0.33 high-NA
not the actual designs
PV value of
wavefront
aberration
image
wavefront RMS
wavefront plane 0.8
aberration
0.4
forecast
0
wavefront 3100 3300 3350 3400 high-NA
reference
exit sphere
pupil
source: Institut für Angewandte Physik, Friedrich-Schiller-Universität Jena

valley = -1.8 m / -5.9 ft BMSL
Tatra mountains with Rysy summit (2499 m / 8199 ft AMSL)
690 km
If Poland was as flat as a high-NA mirror, Rysy summit would be ~69 μm high
you are here
source: www.radiokrakow.pl
Kraków Balice Airport
Φ 1.2 m (peak-to-valley ~ 0.12nm)
× 575 000 RMS ~ 20 pm
source: maps.google.com peak
a high-NA mirror
high-NA
NXE 3400 high-NA
NA=0.55
NA=0.33 NA=0.55
αmask
αmask =sin
=sin -1-1 (0.55
(0.33 4° αmask=sin-1(0.55/4) = 8° Multilayer reflectivity [%]
/4/)8)==5°
NEW
mask 80
anamorphic 60
mask / wafer 40
demagnification 8°
5°
4° 20
ββ =
x=¼¼ 0
βy = ⅛ 6° 0 5 10 15 20
9°
Θ [˚]progress
Jan van Schoot et al., High-NA EUV lithography exposure source:
tool ASML
room to “breathe”
(a SPIE Advanced Lithography 2019 paper)
fulfilling Abbe condition (!) unacceptable transmission losses
… and
sin(α follow the studies performed
mask) / sin(αwafer) = β
at imec.
non-usable incidence angles
Anamorphic magnification
Extreme aspheres enabling further improved

wavefront / imaging performance
Tight surface specifications enabling

low straylight / high contrast imaging
Big last mirror driven by high-NA
Obscuration enables high transmission

Outline
5 | Looking beyond

Mirror production starts…
Processing first mirror
Grinding machine

Mirror production starts…
First mirror ground

Mirror handling robots installed

Metrology vessels’ integration



Things become really large
high-NA EUV integration
high-NA EUV coating
high-NA EUV R+D
high-NA EUV metrology
high-NA EUV optics

Things become really large
TWINSCAN NXE 3400
source: ASML

Outline
5 | Looking beyond

Let’s talk Moore’s Law source: anandtech.com
half-pitch [nm] ZEISS with partners are working hard on

1.000 extending Moore’s Law into next decade
and to keep it well and alive
 optics design is finalized
 optics has a new level of complexity
100
 optics production ongoing
 infrastructure and equipment
build-up continues
10
On a path to break 10 nm resolution limit

1
1985 1990 1995 2000 2005 2010 2015 2020 2025
year
source: anandtech.com
This session’s theme is…

„Advanced Semiconductor Process & Device Technologies in Europe”
advanced R+D: ARCNL
scanner design and integration: ASML

process development and R+D: imec
CO2 drive laser for EUV source: TRUMPF optics: Carl Zeiss SMT
On a path to break 10 nm resolution limit

advanced R+D: Paul Scherrer Institute
… just to name a few
+ a vast network of partners from industry and academia, collaborations, suppliers…
Acknowledgements
Many, many people, too numerous to mention all by name, at high-NA teams of
ZEISS, ASML, imec, LLNL…
… and also many people around the globe that are our suppliers, customers,
and project partners,
… all working hard to make high-NA a reality.
This work is funded by the German Federal Ministry for Economic Affairs and Energy
(BMWi) in the frame of the “Important Project of Common European Interest on
Microelectronics (IPCEI-M),” by the German Federal Ministry of Education and
Research (BMBF), and European Commission projects E450LMDAP (621280), SeNaTe
(662338, 16ESE0036K), TAKE5 (692522, 16ESE0072K), TAKEMI5 (737479) and TAPES3
(783247, 16ESE0287K) within the framework of the ENIAC and ECSEL JU programs.

Concluding thought
number of stars Global number of transistors produced
in the visible 1022
Universe 99.9%
1020
1018
NASA / WMAP Science Team

1016 transistors per year
Transistors per year
transistors total
Transistors total
1014
1012 0.1%
99.9% of all
number of stars
in the Milky Way 10
10 transistors
were made
108 after 2005
106
1950 1960 1970 1980 1990 2000 2010 2020
50 1960 1970 1980 1990 2000 2010 2020
spectrum.ieee.org/computing/hardware/transistor-production-has-reached-astronomical-scales year
www.forbes.com/sites/jimhandy/2014/05/26/how-many-transistors-have-ever-shipped

References / an extract
Mark van de Kerkhof et al. “Enabling sub-10nm node lithography: presenting the NXE:3400B
EUV scanner,” Proc. SPIE 101430D (2017)
Burn J. Lin “Where Is The Lost Resolution?,” Proc. SPIE 0633 (1986)
Eelco van Setten et al., “High NA EUV lithography: Next step in EUV imaging,” Proc. SPIE
1095709 (2019)
Jan van Schoot, et al. “High-NA EUV lithography exposure tool progress,” Proc. SPIE 1095707
(2019)

Thank you


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High-NA EUV Optics – the Key for Miniaturization

Carl Zeiss SMT GmbH, Germany

September 24th, 2019

ESSCIRC/ESSDERC 2019, Cracow, Poland 1 of 43

This session’s theme is…

For this talk this means that…

High-NA (optics) is really challenging yet remarkable advanced piece of technology

These are interesting times for a lithographer!

Bartosz Bilski, Heiko Feldmann, Paul ESSCIRC/ESSDERC 2019, Cracow, Poland 2 of 43

1 | A little history + basics of lithography

2 | EUV lithography is the future

3 | The fascinating world of high-NA optics

4 | Where are we today?

Bartosz Bilski, Heiko Feldmann, Paul ESSCIRC/ESSDERC 2019, Cracow, Poland 3 of 43

1 | A little history + basics of lithography

2 | EUV lithography is the future

3 | The fascinating world of high-NA optics

4 | Where are we today?

Bartosz Bilski, Heiko Feldmann, Paul ESSCIRC/ESSDERC 2019, Cracow, Poland 4 of 43

The cornerstone equation of the microscopic image formation theory

Bartosz Bilski, Heiko Feldmann, Paul ESSCIRC/ESSDERC 2019, Cracow, Poland 6 of 43

The cornerstone equation of the microscopic image formation theory

Bartosz Bilski, Heiko Feldmann, Paul ESSCIRC/ESSDERC 2019, Cracow, Poland 7 of 43

Critical Dimension = k1 λ/NA

move out from

The cornerstone equation of the microscopic image formation theory

Bartosz Bilski, Heiko Feldmann, Paul ESSCIRC/ESSDERC 2019, Cracow, Poland 8 of 43

Critical Dimension = k1 λ/NA

Three knobs to shrink the Critical Dimension:

Bartosz Bilski, Heiko Feldmann, Paul ESSCIRC/ESSDERC 2019, Cracow, Poland 9 of 43

Critical Dimension = k1 λ/NA We are not infinitely flexible, though

source: anandtech.com source: c't / Florian Müssig

tsmc keynote | Hot Chips: A Symposium on High Performance Chips

1 | A little history + basics of lithography

2 | EUV lithography is the future

3 | The fascinating world of high-NA optics

4 | Where are we today?

Bartosz Bilski, Heiko Feldmann, Paul ESSCIRC/ESSDERC 2019, Cracow, Poland 13 of 43

EUV Lithography reaches

Bartosz Bilski, Heiko Feldmann, Paul ESSCIRC/ESSDERC 2019, Cracow, Poland 14 of 43

Bartosz Bilski, Heiko Feldmann, Paul ESSCIRC/ESSDERC 2019, Cracow, Poland 15 of 43

Bartosz Bilski, Heiko Feldmann, Paul ESSCIRC/ESSDERC 2019, Cracow, Poland 16 of 43

1 | A little history + basics of lithography

2 | EUV lithography is the future

3 | The fascinating world of high-NA optics

4 | Where are we today?

Bartosz Bilski, Heiko Feldmann, Paul ESSCIRC/ESSDERC 2019, Cracow, Poland 17 of 43

illumination optics reflective optics (mirrors)

A more realistic example of a litho lens

Bartosz Bilski, Heiko Feldmann, Paul ESSCIRC/ESSDERC 2019, Cracow, Poland 18 of 43

wafer design principle

Multilayer reflectivity [%]

Even when we can’t have normal incidence,

incidence angles higher incidence angles in general

(a SPIE Advanced Lithography 2019 paper)

Bartosz Bilski, Heiko Feldmann, Paul ESSCIRC/ESSDERC 2019, Cracow, Poland 23 of 43

you are here

Extreme aspheres enabling further improved

Tight surface specifications enabling

Big last mirror driven by high-NA

Obscuration enables high transmission

Bartosz Bilski, Heiko Feldmann, Paul ESSCIRC/ESSDERC 2019, Cracow, Poland 26 of 43

1 | A little history + basics of lithography

2 | EUV lithography is the future