IDD06E60

Fast Switching EmCon

Emitter Diode
Controlled Diode Product Summary
VRRM 600 V
IF 6 A
VF 1.5 V
Feature T jmax 175 °C
• 600
600VV Emitter
EmConControlled
technologytechnology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
• Easy paralleling

Type Package Ordering Code Marking Pin 1 PIN 2,4 PIN 3

IDD06E60 PG-TO252-3 - D06E60 NC C A

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter
Parameter Symbol
Symbol Value
Value Unit
Unit
Repetitive
Repetitive peak
peak reverse
reverse voltage
voltage VRRM
VRRM 600
600 VV
Continousforward
Continuous forward current
current IF A
TTCC==25°C
25C IF 14.7
14.7 A
TTC ==90°C
C
90C 1010
Surge non repetitive forward current
Surge non repetitive forward current I FSM
IFSM 2929 A
TC = 25C, tp = 10 ms, sine halfwave
TC=25°C, tp=10 ms, sine halfwave
Maximum repetitive forward current
IFRM 2222 A
TMaximum repetitive forward current
C = 25C, tp limited by tj,max, D = 0.5
I FRM
TC=25°C, tp limited by Tjmax, D=0.5
Power dissipation
TPower
C = 25Cdissipation PtotP t o t 46.8 WW
TTCC==25°C
90C 26.6
46.8
Operating
TC=90°C junction temperature Tj 26.6
-40…+175
Storage temperature Tstg -55...+150
-55...+175
Operating and storage temperature Tj , Tstg °C°C
Soldering
Soldering temperature
temperature TS T S 260 °C
260
1.6mm (0.063 in.) from
reflow soldering, case for 10 s
MSL3

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 IDD06E60

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 3.2 K/W
SMD version, device on PCB: RthJA
@ min. footprint - - 75
@ 6 cm 2 cooling area 1) - - 50

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Reverse leakage current IR µA
V R=600V, Tj=25°C - - 50
V R=600V, Tj=150°C - - 500
Forward voltage drop VF V
IF=6A, Tj=25°C - 1.5 2
IF=6A, Tj=150°C - 1.5 -

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.

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 IDD06E60

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Reverse recovery time t rr ns
V R=400V, IF=6A, di/dt=550A/µs, Tj=25°C - 70 -
V R=400V, IF=6A, di/dt=550A/µs , Tj=125°C - 100 -
V R=400V, IF=6A, di/dt=550A/µs , Tj=150°C - 105 -
Peak reverse current I rrm A
V R=400V, IF=6A, di/dt=550A/µs, Tj=25°C - 6.5 -
V R=400V, IF=6A, di/dt=550A/µs, Tj=125°C - 7.4 -
V R=400V, IF=6A, di/dt=550A/µs, Tj=150°C - 7.9 -
Reverse recovery charge Q rr nC
V R=400V, IF=6A, di/dt=550A/µs, Tj=25°C - 240 -
V R=400V, IF=6A, di/dt=550A/µs, Tj=125°C - 360 -
V R=400V, IF=6A, di/dt=550A/µs, Tj=150°C - 400 -
Reverse recovery softness factor S
V R=400V, IF=6A, di F/dt=550A/µs, Tj=25°C - 4 -
V R=400V, IF=6A, di F/dt=550A/µs, Tj=125°C - 4.8 -
V R=400V, IF=6A, di F/dt=550A/µs, Tj=150°C - 4.9 -

Rev.2.2
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 IDD06E60
1 Power dissipation 2 Diode forward current
Ptot = f (TC) IF = f(TC)
parameter: Tj ≤ 175°C parameter: Tj ≤ 175°C
50 16
W
A

40
12
35
P tot

10

IF
30

25 8

20
6

15
4
10

2
5

0 0
25 50 75 100 125 °C 175 25 50 75 100 125 °C 175
TC TC

3 Typ. diode forward current 4 Typ. diode forward voltage

IF = f (VF) VF = f (Tj)

18 2

A V
12A

1.8
14 -55°C
25°C
100°C 1.7
12 150°C
VF
IF

1.6
10
1.5 6A
8
1.4
6
1.3
3A
4
1.2

2 1.1

0 1
0 0.5 1 1.5 V 2.5 -60 -20 20 60 100 °C 160
VF Tj

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 IDD06E60

5 Typ. reverse recovery time 6 Typ. reverse recovery charge

trr = f (diF/dt) Qrr =f(diF/dt)
parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125 °C
300 550
nC 12A

ns
500

12A 475
6A
200 3A 450

Qrr
trr

425

150 400
6A
375

100 350

325

50 300
3A
275

0 250
200 300 400 500 600 A/µs 800 200 300 400 500 600 A/µs 800
di F/dt diF/dt

7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor

Irr = f (diF/dt) S = f(diF /dt)
parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125°C
11 11

9
12A 12A
9
6A 8 6A
3A 3A
8 7
Irr

6
7
5

6 4

3
5
2
4
1

3 0
200 300 400 500 600 A/µs 800 200 300 400 500 600 700 800 A/µs 1000
di F/dt diF/dt

Rev.2.2
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 IDD06E60
9 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = t p/T
10 1 IDD06E60

K/W

10 0
ZthJC

10 -1

D = 0.50
10 -2 0.20
0.10

single pulse 0.05

0.02
10 -3
0.01

10 -4 -7 -6 -5 -4 -3 -2 0
10 10 10 10 10 10 s 10
tp

Rev.2.2
Rev. 2.4 Page 6 2007-04-24
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 IDD06E60

PG - TO252 - 3

Rev.2.2
Rev. 2.4 Page 7 2007-04-24
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 IDD06E60

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Rev. 2.4
Rev.2.2 Page 8 2007-04-24
2013-12-05