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FET

Chapter 1
Field Effect Transistors

Spring 2012
4th Semester Mechatronics
SZABIST, Karachi

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FET

Course Support
humera.rafique@szabist.edu.pk
Office: 100 Campus (404)

Official: ZABdesk
https://sites.google.com/site/zabistmechatronics/home/spring-2012/ecd
ebooks: https://sites.google.com/site/zabistmechatronics/home/ebooks

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FET Chapter Contents 3

• FET Introduction:
o Comparison with BJTs
o Types

• JFET: Construction and Working

• Biasing
• Common source Configuration
• Common-Drain
• Common-Gate
• Specifications
• Applications

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FET

FETs

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FET Field Effect Transistors
Field Effect:
An electric field is established by the charges present, which controls the
conduction path of the output circuit without the need for direct contact
between the controlling and controlled quantities

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FET FETs vs. BJTs
Similarities:
* Amplifiers
* Switching devices
* Impedance matching circuits

Differences:
BJTs:

current controlled devices (IB controls IC)

higher gains

highly sensitive to changes in applied signal

FETs
o voltage controlled device (VGS controls ID)
o more temperature stable
o higher input impedance
o more easily integrated on ICs (usually smaller than BJTs)
o generally more static sensitive than BJTs
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FET FET Types
1. JFET: Junction FET
a. n-channel
b. p-channel

2. MOSFET: Metal-Oxide-Semiconductor FET

a. D-MOSFET (Depletion type)
• n-channel
• p-channel
b. E-MOSFET (Enhancement type)
• n-channel
• p-channel

3. MESFET: Metal-Semiconductor FET

a. D-MESFET (Depletion type)
• n-channel
• p-channel

b. E-MESFET (Enhancement type)

• n-channel
• p-channel

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FET JFET

JFET:
o Widely used
o Basic type

o Three terminal device

o Drain,
o Source and,
o Gate

o One terminal controls the current between the other two

o Types:
a. n-channel
b. p-channel

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FET JFET Construction
n-channel JFET:
• Three terminals:

1. Drain (D): connected to the n-channel

2. Source (S): connected to the n-channel
3. Gate (G): connected to the p-type material

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FET JFET Construction
n-channel JFET:
• Three terminals:

1. Drain (D): connected to the n-channel

2. Source (S): connected to the n-channel
3. Gate (G): connected to the p-type material

• Under no-bias (no applied potential):

• A depletion region at each junction
• Similar to diode under-no bias
• Depletion region:
• void of free carriers and,
• unable to support conduction

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FET JFET Construction
JFET operation and a water spigot analogy:

The source of water pressure is the accumulation of electrons at the negative pole of
the drain-source voltage:
Source of water pressure: applied voltage from drain-to-source

The drain of water is the electron deficiency (or holes) at the positive pole of the
applied voltag:
The drain of water: Sink of charges

The control of flow of water is the gate voltage that

controls the width of the n-channel and, therefore, the
flow of charges from source to drain.
A hand operates the valve to control the flow of water:
The gate (through an applied signal) controls the flow of charges

The overall operation of the JFET is based on varying the

width of the channel to control The Drain current

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FET JFET Operating Characteristics 12

Three basic operating conditions for a JFET:

1. VGS = 0, VDS increasing to some positive value

2. VGS < 0, VDS at some positive value

3. Voltage-controlled resistor

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FET JFET Operating Characteristics: VGS = 0 V

VGS = 0 and VDS increases from 0 to a more positive voltage:

• Gate and Source terminals: at the same potential

• Drain: at positive potential => reverse biased

difference of potential
• Gate: at negative potential => reverse biased
• Source: negative potential => forward biased
• a small depletion layer surrounds the gate (Gate is more –ve than Drain)
• VGS and VDS
• Larger the VDS , larger the depletion layer
• Larger the −VGS , larger the depletion layer

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