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Wide Frequency Range Voltage Controlled Ring Oscillators

based on Transmission Gates


Meng-Lieh Sheu, Ta-Wei Lin, Wei-Hung Hsu

Department of Electrical Engineering, National Chi Nan University, Puli, TAIWAN,


sheu@ncnu.edu.tw; s1323536@ncnu.edu.tw ; s3323902@ncnu.edu.tw

ABSTRACT The VCO we proposed is suitable for wireless


In this paper, a voltage-controlled ring oscillator biotelemetry because of the low power and compact area.
(VCO) with wide linear tuning frequency range Biotelemetry is typically a technique for the remote
capability based on transmission gates is described. It recovery of physiologically based signals from both
also features the rapid voltage swing and the 50% duty humans and animals. Often the aim is to gather
cycle independent of the control voltage. Fabricated in information with minimum disturbance to the subject,
TSMC 0.35µm 1P4M, 3.3V CMOS process, the VCO over distances which can range from a few centimeters
achieves an operating frequency range of 4.8Hz to to thousands of kilometers. To avoid the defect of hard
256MHz. The measured peak-to-peak and rms jitter are wire connection, radio transmitter and receiver units can
41 and 5.8 p-sec as operating at 200 MHz. form the heart of the biotelemetry system. So the
concern of low power becomes the key point of the
Keywords: voltage-controlled oscillator (VCO), requirement of the system. Therefore, the low power
transmission gate, wide frequency range. VCO holds a responsible position within the wireless
biotelemetry.
1. INTRODUCTION In this paper, we proposed the voltage-controlled ring
oscillators based on the transmission gates. Wide linear
tuning frequency range capability can be obtained by
With the development of CMOS technology, millions adjusting resistances of transmission gates [8]. In section
or even billions of transistors can be integrated in a 2, characteristics of transmission gates are described and
single chip and so it makes the system-on-chip (SOC) three kinds of voltage-controlled ring oscillators based
design possible. The microprocessor may need to on transmission gates will be analyzed. Operation of
provide different data rates in kinds of serial links. proposed VCO is described in section 3. Simulation and
Besides, various wireless transmission standards have measurement results are given in section 4. Finally, the
their own carrier frequencies. Moreover, like portable conclusions are addressed in section 5.
computers or mobile phones, frequency scaling is
becoming important for low-power operation manner [1].
Therefore, there is no doubt that we need ring oscillators 2. CHARACTERISTICS OF
operating over a broad frequency range to meet those TRANSMISSION GATES
ends.
It is distinct to design a voltage-controlled ring The transmission gate shown in Fig 1 is designed to
oscillator (VCO) with wide frequency range through act as a voltage-controlled switch. When VG is high, both
enlarging the driving capability, the loading capacitor, or Mn and Mp are biased into conduction region and the
the number of delay cells [2]-[7]. But the drawback of switch is closed; at this time, the resistance of the
enlarging the driving capability is definitely to produce transmission gate is very small. If VG is low, then both
much power consumption. Enlarging the loading MOSFETs are in cutoff region and the switch is
capacitor will also occupy large die area and not to performed like open circuit; In such case, we can
mention, this way is easily drifted with the process, consider the resistance of the transmission gate is ideally
voltage and temperature (PVT) variation. Also, it will infinite. From above discussions, we can speculate that
encounter both problems of the large power consumption the resistance must vary greatly depending on the gate
and chip area by changing the number of the delay stages voltage.
to broaden the frequency rage.
Another approach to achieving wide frequency range
of the voltage-controlled ring oscillator is controlling the
resistance. Compared to these methods above, it create
the better chance to design a low power and wide tuning
frequency range ring oscillator through the voltage-
controlled resistor because it occupies small area and Figure 1. Transmission gate circuit and its equivalent
consumes no excess power consumption. small-signal RC model

0-7803-8834-8/05/$20.00 ©2005 IEEE. 2731


From [8], the effective resistance RTG is given as With the additional feedback loops, like Figure 4.,
following, where the α-power law is applied. the single-ended transmission-gate VCO can be
converted into the differential self-regulating VCO.

R TG = k
( )
 1 − e −1 ⋅ VDD 
− 0 .3 
They both not only have the wide and linear tuning
capability but also have advantages below: no need of
 VG − VTH 
  current biasing or a V-I converter (i.e. a purely true
VTH < VG < (1 − e −1 ) ⋅ VDD + VTH ….………..(2a) VCO), rail-to-rail voltage swing, suitable for operation
  under low voltage, and power-efficient due to reduction
  of short-circuit current.
1
R TG = k ⋅ ln 

−1 VDD
 1 − 0.5 ⋅ (1 − e ) ⋅ 
 VG − VTH 
VG > (1 − e −1 ) ⋅ VDD + VTH …………………(2b)

Figure 2 is the comparison results of the equation (2a, b)


and HSPICE simulation. We can observe that the
transconductance of the transmission gate has the wide
and linear tuning capability [9].
(a)

(b)
Figure 2. Gate voltage (Vctrl) versus transconductance
(Gtg) Figure 4. Self-regulating VCO (a) delay cell (b) three-
stage ring oscillator
Most power consumption of a transmission gate
comes from the charging and discharging current However, both the transmission gate VCO and self
through the input signal to the output loading. It isn’t regulating VCO have the disadvantage, the variation of
driven by any power rails, so little power is consumed the duty cycle dependent on the control voltage. The
[9]. 50% duty cycle is important in clock generation
applications such as DDR-SDRAM’s and A/D
3. WIDE FREQUENCY RANGE converters because both positive and negative transitions
VOLTAGE CONTROLLED RING of a clock signal are needed [10]. It is usual to get 50%
duty cycle by controlling a VCO oscillating the double
OSCILLATORS BASED ON frequency and then dividing it by two. But it wastes the
TRANSMISSION GATES additional power and limits the higher output frequency.
Another way to achieve 50% duty cycle is to comprise
A. TRANSMISSION GATE VCO & SELF the duty cycle correction (DCC) circuit. But, there are
REGULATING VCO additional power consumption and noise sources.
Figure 3 is a three-stage transmission gate VCO
[8].Each delay cell is composed of two transistors and B. FAST VOLTAGE SWING VCO
one transmission gate, which achieves wide frequency
tuning range. Back to consider the circuit in Figure3 and Figure4,
we can observe that the asymmetric charging/discharging
paths cause the variation of duty cycle. For instance,
when the control voltage in Figure 5 decreases, the
resistance of the transmission gate becomes large. Then
the time constant increases and changes the balance
period.

Figure 3. Three stage transmission-gate VCO

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equation of (4). Afterwards the minimum frequency can
be determined by (5). For different KVCO, we can choose
various sizes of transmission gates.

Figure 5. Transient response for charging or discharging


path

If we can produce symmetric charging and Figure 7. Simple RC model


discharging paths, the duty cycle will be independent of
the control voltage. In Figure 6, we move the 4. SIMULATION AND EXPERIMENTAL
transmission gate to the loading node. Thus, the charging RESULTS
and discharging path are symmetric so that the difference
of the charging and discharging time is independent of We select the fast voltage swing VCO to implement
the transmission gate. Just designing the inverter for wireless biotelemetry application, which frequency
properly, we can make the 50% duty cycle waveform. ranges from 174MHz to 216MHz [12]. It was fabricated
in TSMC 0.35µm 1P4M, 3.3V technology. Table 1
summarizes the comparisons of simulation and
measurement results. Figure 8 is the output waveform
oscillating at 200MHz when the power supply is 3.3V.
The power is simulated about 1.76mW.Figure 9 shows
the jitter histogram. The peak-to-peak and rms jitter are
41ps and 5.8ps. Figure 10 plots the output frequency
versus the control voltage.
Figure 6. Three stage fast voltage swing VCO
5. CONCLUSIONS
Besides, the VCO has the shorter rise and fall time,
namely the fast voltage swing [11]. Before designing the A voltage controlled ring oscillator based on
fast voltage swing VCO, we first analyze the simple RC transmission gates with wide frequency tuning range and
model. In Figure 7, the frequency can be found as 50% duty cycle independent of the control voltage is
1 described. The frequency of the implemented VCO
fosc = ranges from 256MHz to 4.8Hz. The measured peak-to-
2⋅N⋅τ
1 GM …… peak and rms jitter are 41 and 5.8 ps when operating at
= =
 1  2 ⋅ N ⋅ Cg ⋅ (1 + G M ⋅ R TG ) 200MHz.
2 ⋅ N ⋅  + R TG  ⋅ Cg
 GM 
……………………………………………………(3) REFERENCES
,where GM is transconductance of a single stage inverter.
[1] O.T.-C. Chen, R.R.-B. Sheen, “A power-efficient
Assuming the RTG is very small, i.e. ON state, the wide-range phase-locked loop”, IEEE J. Solid-
frequency can be approximated as State Circuits, vol. 37, pp. 51-62, Jan. 2002
fosc =
G M …………………………………..(4) [2] Hyuk-Jun Sung, Kwang Sub Yoon, “A 3.3 V high
2 ⋅ N ⋅ Cg speed CMOS PLL with 3-250 MHz input locking
range” Circuits and Systems, 1999. ISCAS '99.
When RTG is large and GM*RTG>>1, Proceedings of the 1999 IEEE International
fosc =
GM Symposium on, Vol. 2, pp. 553-556, 30 May-2
2 ⋅ N ⋅ Cg ⋅ R TG June 1999.
1 [3] K. Minami, M. Fukaishi, M. Mizuno, H. Onishi, K.
=
( )
 1 − e −1 ⋅ VDD
2 ⋅ N ⋅ Cg ⋅ k ⋅ 

− 0.3 
Noda, K. Imai, T. Horiuchi, H. Yamaguchi, T.
 V −V  Sato, K. Nakamura, M. Yamashina, “A 0.10 µm
 G TH 
CMOS, 1.2 V, 2 GHz phase-locked loop with gain
…………………………………………………………(5) compensation VCO” in Custom Integrated
To guarantee a design of a oscillator which includes
Circuits, 2001, IEEE Conference on. , pp. 213-216,
fH~fL, we first extend it twice, that is, (3fL-fH)/2~(3fH-
fL)/2. Then, we let the maximum frequency satisfy the 6-9 May 2001.

2733
[4] Woogeun Rhee, “A low power, wide linear-range
CMOS voltage-controlled oscillator”, Circuits and
Systems, 1998. ISCAS '98. Proceedings of the
1998 IEEE International Symposium on, vol. 2, pp.
85-88, 31 May-3 June, 1998.
[5] Y. Savaria, D. Chtchvyrkov, J.F. Currie, “A fast
CMOS voltage-controlled ring oscillator”,
Circuits and Systems, 1994. ISCAS '94., 1994
IEEE International Symposium, vol. 4, pp. 359-
362, 30 May-2 June 1994.
[6] I. Brynjolfson, Z. Zilic, “A new PLL design for
clock management applications”, Circuits and
Systems, 2001. ISCAS 2001. The 2001 IEEE
International Symposiumon , vol. 4, pp.814-817,
6-9 May 2001.
[7] H. Sutoh, K. Yamakoshi, M. Ino, “A 0.25 µm
CMOS/SIMOX PLL clock generator embedded in
a gate array LSI with 5 to 400 MHz lock range”,
Custom Integrated Circuits Conference, 1997., Figure 8. VCO output waveform at 200MHz
Proceedings of the IEEE 1997, pp.41-44, 5-8 May
1997.
[8] In-Chul Hwang, Chulwoo Kim, Sung-Mo Kang,
“A CMOS self-regulating VCO with low supply
sensitivity”, IEEE J. Solid-State Circuits, vol. 39,
pp.42-48, January 2004.
[9] N.R. Mahapatra, S.V. Garimella, A. Tareen, “An
empirical and analytical comparison of delay
elements and a new delay element design”, VLSI,
2000. Proceedings. IEEE Computer Society
Workshop on, pp. 81-86, 27-28 April 2000.
[10] T. Gawa, K. Taniguchi, “A 50% duty-cycle
correction circuit for PLL output”, Circuits and
Systems, 2002. ISCAS 2002. IEEE International
Symposium on, vol. 4, pp. IV-21-IV-24, 26-29
May 2002.
[11] N. Retdian, S. Takagi, N. Fujii, “Voltage
controlled ring oscillator with wide tuning range
and fast voltage swing”, ASIC, 2002. Proceedings.
2002 IEEE Asia-Pacific Conference on, pp. 201- Figure 9. Jitter histogram of VCO output at 200MHz
204, 6-8 Aug. 2002.
[12] R. J. Betancourt, A. Hajimiri, T. H. Lee, “A 350
measurment
1.5mW, 200MHz CMOS VCO for Wireless 300
Frequency(MHz)

simulation(tt)
Biotelemetry”, IEEE Workshop on Design of 250
Mixed-Mode Integrated Circuits and Applications, 200 simulation(ff)
July 1997. 150 simulation(ss)
100
TABLE 1 SUMMARY 50
Simulation Measurement 0
1V

2V

3V
V
V
V
V

V
V
V
V

V
V
V
V

Technology TSMC 0.35µm CMOS 1P4M


0.2
0.4
0.6
0.8

1.2
1.4
1.6
1.8

2.2
2.4
2.6
2.8

3.3

Control Voltage
Power supply 3.3V
Max.
260MHz@Vc=3.3V 256MHz@Vc=3.3V
frequency
Figure 10. VCO oscillating frequency versus control
Min.
17.1Hz@Vc=0V 4.79Hz@Vc=0.2V voltage
frequency
105.27MHz/V 111.16MHz/V
KVCO (25.2MHz@Vc=1.1V~ (89.7MHz@Vc=1.8V~
256.8MHz@Vc=3.3V) 256.8MHz@Vc=3.3V)

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