Dr.

Devlina Adhikari

BASIC ELECTRONICS LAB

PhD (IIT Kharagpur)
Assistant Professor, ICT
COURSE STRUCTURE

Pandit Deendayal Petroleum University School of Technology

20IC101P Basic Electronics Lab

Teaching Scheme Examination Scheme

Theory Practical Total
L T P C Hrs/Week
MS ES IA LW LE/Viva Marks

0 0 1 1 1 0 0 0 25 25 50
TIME TABLE
9:00 to 9:55 10:00 to 10:55 11:00 to 11:55 12:00 to 12:55

L-(20CH101T) L-(20ME102T) L-(20MA101T) T-(20CP101P)

MON
KALM,E202 SSK,E202 MAS,E202 VAKH,C008

L-(20IC101T) L-(20HS102T) L-(20CH101T) T-A(20ME101P)

TUE
STNA,E202 DEY,MNS,E202 KALM,E202 VIV,D006

L-(20ME102T) L-(20MA101T) L-(20HS102T) T-(20IC101P)

WED
SSK,E202 MAS,E202 DEY,MNS,E202 DEA,E112-113

L-(20CP101T) L-(20MA101T) L-(20CH101T) T-B(20ME101P)

THU
VAKH,E202 MAS,E202 KALM,E202 RVC,D006

L-(20HS102T) L-(20ME102T) L-(20IC101T) T-(20MA101T)

FRI
DEY,MNS,E202 SSK,E202 STNA,E202 MAS,E202
 EXPERIMENT SESSIONS (SIMULATION BASED)
1. To study the simulation tool and its features for analog circuit simulation.
2. To study the VI characteristic of silicon and germanium diodes.
3. To study reverse characteristics of Zener diode.
4. To study half wave, full wave and bridge rectifiers
5. To study BJT as switch.
6. To study common emitter amplifier.
7. To study different biasing circuits of BJT.
8. To study transfer and drain characteristic of FET and MOSFET.
EXPERIMENT SESSIONS (SIMULATION BASED)
9. To study the simulation of digital circuits.
10. To study and verify logic gates.
11. To implement X-OR and X-NOR gates using basic gates.
12. To study and design adder and subtracter circuits.
13. To study and design flip flops.
14. To study OPAMP and its properties.
15. To study ADC and DAC.
16. Design of mini project in a group of 4-5 students.
LESSON PLAN

Lect. No. Topic Taught Remarks

1-4 Experiment No. 1-4

5-8 Experiment No. 5-8

9-12 Experiment No. 9-12

13-16 Experiment No. 13-16

REFERENCES
Boylestad and Nashlesky, “Electronic Devices and Circuit Theory”, PHI.
N.N. Bhargava, S.C. Gupta, and D.C. Kulshreshtha, “Basic Electronics And Linear
Circuits”, McGraw Hill Education (India).
R. A. Gaikwad, “Operational Amplfier and Linear Integrated Circuits”, PHI.
Morris Mano, “Digital Design”, PHI.
J. Millman, C. Halkias and C. Parikh, “Integrated Electronics”, Tata McGraw Hill.
ATTENDANCE

University Rule – 80% Mandatory

My Requirement – 100% Mentally !
EVALUATION SCHEME

Lab Note-Book - 50%

End-Sem (Lab-Exam/Viva) - 50%

COURSE OBJECTIVES

 To understand the characteristics of PN junction diodes and their applications.

 To Observe properties of BJT, FET and MOSFET.

 To illustrate the OPAMP application in different real life circuits.

 To introduce basic concepts of digital electronics.

COURSE OUTCOMES (CO’S)

CO1: Study the fundamentals of electronic components.

CO2: Understand the working principle of semiconductor devices.
CO3: Apply the analog and digital concept in building real time circuits.
CO4: Analyze the behaviour of semiconductor devices, OPAMP, ADC and DAC.
CO5: Evaluate different circuit for different device parameters.
CO6: Build analog and digital sub-system.
 OFFICE HOUR
This is reserved time slot for students by faculty
Faculty will make sure to remain in cabin during this time slot for the session
Monday 11.00 am -12.00 pm
Purpose
 Doubt clearing Email: Devlina.Adhikari@sot.pdpu.ac.in
Contact No.: 07923275459
 One to one interactions
Cabin Location
Room No. 208 – Faculty Wing, 2nd Floor, E Block, School of Technology
LAB NOTE BOOK
1.Title of the Experiment
• Name 2.Apparatus Required
• Roll No.
• Department 3.Theory
• Subject
4.Observation
5.Discussion
VI CHARACTERISTIC OF SILICON SESSION 2
AND GERMANIUM DIODES
DIODES

A diode is a two-terminal electronic component that

conducts current primarily in one direction (asymmetric conductance);
it has low (ideally zero) resistance in one direction, and high ideally
infinite resistance in the other.
DIFFERENT TYPES OF DIODES

p-n diode
 Zener diode Photodiode

Light-emitting diode Varicap Tunnel diode

Schottky diode Transient-voltage-

suppression diode (TVS)
BIASING
 FORWARD BIAS

 p: +
 n: -
 Width of Depletion Region decreases.
 Majority Carrier flow.
 Reverse saturation Current Is
 REVERSE BIAS

 p: -
 n: +
 Width of Depletion Region increases.
 Minority Carrier flow.
 Reverse saturation Current Is
CHECKING OF DIODE
A digital multimeter's diode test:
• Diode produces a small voltage between the test leads enough to forward-bias a diode
junction.
• Normal voltage drop is 0.5 V to 0.8 V.
• The forward-biased resistance of a good diode should range from 1000 ohms to 10 ohms.
• When reverse-biased, a digital multimeter's display will read OL (which indicates very high
resistance).

• Diodes are assigned current ratings.

• If the rating is exceeded and the diode fails, it may short and
• Either a) allow current to flow in both directions or
b) halt current from flowing in either direction.
CHECKING OF DIODE

Forward Bias: lamp Glow Reverse Bias: No Glow

SHOCKLEY’S EQUATION
The general characteristics of a semiconductor diode can be defined by the following equation,
referred to as Shockley’s equation, for the forward- and reverse-bias regions:
FORWARD BIAS
REVERSE BIAS
V-I CHARACTERISTICS
Silicon semiconductor diode characteristics.
• The voltage at which the forward diode
current starts increasing rapidly is
known as the cut in voltage of a diode.
• The cut in voltage is very close to the
barrier potential.
• Cut in voltage is also called as knee
voltage.
• For Silicon (Si) diode the value of knee
voltage is 0.7 volts and for Germanium
(Ge) diode the value is 0.3 volts.
REVERSE CHARACTERISTICS OF SESSION 3
ZENER DIODES
 ZENER DIODE invented by the American engineer Clarance Melvin Zener

A Zener diode is a
heavily doped
semiconductor device
that is designed to
operate in the reverse
direction.
REVERSE CHARACTERISTICS OF ZENER DIODE
 When a reverse voltage is applied to a Zener voltage, initially a small
reverse saturation current Io flows across the diode.
 This current is due to thermally generated minority carriers.
 As the reverse voltage is increased, at a certain value of reverse voltage,
the reverse current increases drastically and sharply.
 This is an indication that the breakdown has occurred.
 This voltage is known as breakdown voltage or Zener voltage and it is
denoted by Vz.
REVERSE CHARACTERISTICS OF ZENER DIODE
 The Zener potential of a Zener diode is very
sensitive to the temperature of operation.

Power Rating – It denotes the maximum power the Zener diode can dissipate. It is
given by the product of the voltage of the diode and the current flowing through it.
10V 500mW Zener Diode DO35
TO STUDY HALF WAVE, FULL WAVE
SESSION 4
AND BRIDGE RECTIFIERS
RECTIFIERS

An electrical device which converts an alternating

current into a direct one by allowing a current to
flow through it in one direction only.
HALF WAVE RECTIFIER
HALF WAVE RECTIFIER (OUTPUT)
FULL WAVE RECTIFIER
FULL WAVE RECTIFIER (OUTPUT)
BRIDGE RECTIFIER
BRIDGE RECTIFIER (OUTPUT)
BRIDGE RECTIFIER WITH CAPACITOR (FILTER)
FILTERED OUTPUT