AP50G60SW

RoHS-compliant Product
Advanced Power N-CHANNEL INSULATED GATE
Electronics Corp. BIPOLAR TRANSISTOR

Features
C VCES 600V
▼ High Speed Switching IC 45A
▼ Low Saturation Voltage
VCE(sat),Typ.=2.6V@IC=33A C
▼ Built-in Fast Recovery Diode G
C TO-3P G
E

E
Absolute Maximum Ratings
Symbol Parameter Rating Units
VCES Collector-Emitter Voltage 600 V
VGE Gate-Emitter Voltage +30 V
IC@TC=25oC Collector Current 75 A
o
IC@TC=100 C Collector Current 45 A
ICM Pulsed Collector Current 150 A
IF@TC=25oC Diode Forward Current 40 A
o
IF@TC=100 C Diode Forward Current 15 A
o
PD@TC=25 C Maximum Power Dissipation 300 W
TSTG Storage Temperature Range -55 to 150
o
C
TJ Operating Junction Temperature Range 150 o
C
TL Maximum Lead Temp. for Soldering Purposes 300
o
C
, 1/8" from case for 5 seconds .

Notes:
1.Repetitive rating : Pulse width limited by max. junction temperature .

Thermal Data
Symbol Parameter Value Units
o
Rthj-c Thermal Resistance Junction-Case 0.42 C/W
o
Rthj-c(Diode) Thermal Resistance Junction-Case 1.5 C/W
o
Rthj-a Thermal Resistance Junction-Ambient 40 C/W

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
VCES Collect-to-Emitter Breakdown Voltage VGE=0V, IC=500uA 600 - - V
IGES Gate-to-Emitter Leakage Current VGE=+30V, VCE=0V - - +100 nA
ICES Collector-Emitter Leakage Current VCE=600V, VGE=0V - - 500 uA
VGE=15V, IC=33A - 2.6 3 V
VCE(sat) Collector-Emitter Saturation Voltage
VGE=15V, IC=50A - 3.1 3.5 V
VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA 2 - 6 V
Qg Total Gate Charge IC=33A - 55 100 nC
Qge Gate-Emitter Charge VCE=400V - 12 - nC
Qgc Gate-Collector Charge VGE=15V - 27 - nC
td(on) Turn-on Delay Time VCE=390V, - 27 - ns
tr Rise Time Ic=33A, - 22 - ns
VGE=15V,
td(off) Turn-off Delay Time - 110 - ns
RG=5Ω,
tf Fall Time Inductive Load - 100 260 ns
Eon Turn-On Switching Loss - 0.7 - mJ
Eoff Turn-Off Switching Loss - 1.2 - mJ
Cies Input Capacitance VGE=0V - 1250 2000 pF
Coes Output Capacitance VCE=30V - 235 - pF
Cres Reverse Transfer Capacitance f=1.0MHz - 7 - pF

VF FRD Forward Voltage IF=15A - 1.3 1.7 V

trr FRD Reverse Recovery Time IF=15A - 65 - ns
Qrr FRD Reverse Recovery Charge di/dt = 200 A/μs - 230 - nC

Data and specifications subject to change without notice 1

201009033
AP50G60SW

240 16

o
T C =25 C 20V
18V

VGE , Gate -Emitter Voltage (V)

200 I C =33A
IC , Collector Current (A)

15V
12
V CC =250V
V CC =300V
160
V CC =400V

120 8
12V

80
V GE =10V
4

40

0 0
0 10 20 30 0 10 20 30 40 50 60

V CE , Collector-Emitter Voltage (V) Q G , Gate Charge (nC)

Fig 1. Typical Output Characteristics Fig 2. Gate Charge Characterisitics

100 5

V GE = 15 V
V GE =15V
80
VCE(sat) ,Saturation Voltage(V)
IC , Collector Current(A)

4
T C =25 o C T C =150 o C I C = 50 A
60

3 I C =33A
40

2
20

0 1
0 2 4 6 8 0 40 80 120 160

V CE , Collector-Emitter Voltage (V) Junction Temperature ( o C)

Fig 3. Typical Saturation Voltage Fig 4. Typical Collector- Emitter Voltage

Characteristics v.s. Junction Temperature

1.6 3000
f=1.0MHz
Normalized VGE(th) (V)

1.2
Capacitance (pF)

2000

0.8

C ies
1000

0.4

- -
C oes
0
0
C res
-50 0 50 100 150
1 5 9 13 17 21 25 29 33

Junction Temperature ( o C ) V CE , Collector-Emitter Voltage (V)

Fig 5. Gate Threshold Voltage Fig 6. Typical Capacitance Characterisitics

v.s. Junction Temperature

2
 AP50G60SW

400 1

Normalized Thermal Response (Rthjc)

Duty factor=0.5

300
Power Dissipation (W)

0.2

0.1
200 0.1

0.05
PDM

t
0.02
T
100
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C

Single Pulse

0 0.01
0 50 100 150 200 0.00001 0.0001 0.001 0.01 0.1 1 10

Junction Temperature ( ℃ ) t , Pulse Width (s)

Fig 7. Power Dissipation vs. Junction Fig 8. Effective Transient Thermal

Temperature Impedance, Junction-to-Case (IGBT)
20 20

T C =25 o C I C = 50 A o
T C = 150 C I C = 50 A
33 A 33 A
VCE , Collector-Emitter Voltage(V)

VCE , Collector-Emitter Voltage(V)

15 A 15 A
15 15

10 10

5 5

0 0
0 4 8 12 16 20 0 4 8 12 16 20

V GE , Gate-Emitter Voltage(V) V GE , Gate-Emitter Voltage(V)

Fig 9. Saturation Voltage vs. VGE Fig 10. Saturation Voltage vs. VGE

20 1000

V GE =15V

16
T C =125 o C
IC ,Collctor Current(A)
IF , Forward Current (A)

100
T j =150 o C T j =25 o C
12

10

4
- -

Safe Operating Area

0 1
0 0.4 0.8 1.2 1.6 2 1 10 100 1000

V F , Forward Voltage (V) V CE ,Collector - Emitter Voltage(V)

Fig 11. Forward Characteristic of Fig 12. SOA Characteristics

Diode