PD - 97484

PDP TRENCH IGBT

IRG7R313UPbF

Features Key Parameters

l Advanced Trench IGBT Technology VCE min 330 V
l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.35 V
circuits in PDP applications IRP max @ TC= 25°C 160 A
l Low VCE(on) and Energy per Pulse (EPULSE
TM)
TJ max 150 °C
for improved panel efficiency
l High repetitive peak current capability

l Lead Free package C C

E
C
G G

E D-Pak
n-channel IRG7R313UPbF

G C E
Gate Collector Emitter

Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.

Absolute Maximum Ratings

Parameter Max. Units
VGE Gate-to-Emitter Voltage ±30 V
IC @ TC = 25°C Continuous Collector Current, VGE @ 15V 40
IC @ TC = 100°C Continuous Collector, VGE @ 15V 20 A
IRP @ TC = 25°C Repetitive Peak Current c 160
PD @TC = 25°C Power Dissipation 78 W
PD @TC = 100°C Power Dissipation 31
Linear Derating Factor 0.63 W/°C
TJ Operating Junction and -40 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature for 10 seconds 300
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case d ––– 1.6 °C/W

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVCES Collector-to-Emitter Breakdown Voltage 330 ––– ––– V VGE = 0V, ICE = 250μA
ΔΒVCES/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.4 ––– V/°C Reference to 25°C, ICE = 1mA
––– 1.21 1.45 VGE = 15V, ICE = 12A e
––– 1.35 ––– VGE = 15V, ICE = 20A e
VCE(on) Static Collector-to-Emitter Voltage 1.75 ––– V VGE = 15V, ICE = 40A e
––– 2.14 ––– VGE = 15V, ICE = 60A e
––– 1.41 ––– VGE = 15V, ICE = 20A, TJ = 150°C e
VGE(th) Gate Threshold Voltage 2.2 ––– 4.7 V VCE = VGE, ICE = 1.0mA
ΔVGE(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -10 ––– mV/°C
ICES Collector-to-Emitter Leakage Current ––– 1.0 10 VCE = 330V, VGE = 0V
25 150 μA VCE = 330V, VGE = 0V, TJ = 125°C
––– 75 ––– VCE = 330V, VGE = 0V, TJ = 150°C
IGES Gate-to-Emitter Forward Leakage ––– ––– 100 nA VGE = 30V
Gate-to-Emitter Reverse Leakage ––– ––– -100 VGE = -30V
gfe Forward Transconductance ––– 47 ––– S VCE = 25V, ICE = 12A
Qg Total Gate Charge ––– 33 ––– nC VCE = 240V, IC = 12A, VGE = 15V e
Qgc Gate-to-Collector Charge ––– 12 –––
td(on) Turn-On delay time ––– 1.0 ––– IC = 12A, VCC = 196V
tr Rise time ––– 13 ––– ns RG = 10Ω, L=210μH
td(off) Turn-Off delay time ––– 65 ––– TJ = 25°C
tf Fall time ––– 68 –––
td(on) Turn-On delay time ––– 11 ––– IC = 12A, VCC = 196V
tr Rise time ––– 14 ––– ns RG = 10Ω, L=200μH, LS= 150nH
td(off) Turn-Off delay time ––– 86 ––– TJ = 150°C
tf Fall time ––– 190 –––
tst Shoot Through Blocking Time 100 ––– ––– ns VCC = 240V, VGE = 15V, RG= 5.1Ω
L = 220nH, C= 0.20μF, VGE = 15V
––– 480 –––
EPULSE Energy per Pulse μJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.20μF, VGE = 15V
––– 570 –––
VCC = 240V, RG= 5.1Ω, TJ = 100°C
Class 1C
Human Body Model
(Per JEDEC standard JESD22-A114)
ESD
Class B
Machine Model
(Per EIA/JEDEC standard EIA/JESD22-A115)
Cies Input Capacitance ––– 880 ––– VGE = 0V
Coes Output Capacitance ––– 47 ––– pF VCE = 30V
Cres Reverse Transfer Capacitance ––– 26 ––– ƒ = 1.0MHz
LC Internal Collector Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance ––– 7.5 ––– from package
and center of die contact

Notes:
 Half sine wave with duty cycle = 0.05, ton=2μsec.
‚ Rθ is measured at TJ of approximately 90°C.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.

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200 200
VGE = 18V VGE = 18V
VGE = 15V VGE = 15V
160 VGE = 12V 160 VGE = 12V
VGE = 10V VGE = 10V
VGE = 8.0V VGE = 8.0V
120 120
ICE (A)

ICE (A)
VGE = 6.0V VGE = 6.0V

80 80

40 40

0 0
0 2 4 6 8 10 0 2 4 6 8 10
VCE (V) VCE (V)

Fig 1. Typical Output Characteristics @ 25°C Fig 2. Typical Output Characteristics @ 75°C
200 200
VGE = 18V VGE = 18V
VGE = 15V VGE = 15V
160 VGE = 12V 160 VGE = 12V
VGE = 10V VGE = 10V
VGE = 8.0V VGE = 8.0V
120 120
ICE (A)

VGE = 6.0V
ICE (A)

VGE = 6.0V

80 80

40 40

0 0
0 2 4 6 8 10 0 2 4 6 8 10
VCE (V) VCE (V)

Fig 3. Typical Output Characteristics @ 125°C Fig 4. Typical Output Characteristics @ 150°C

200 14
IC = 12A
12
160
10

120 TJ = 25°C
8
VCE (V)
ICE (A)

TJ = 150°C
T J = 25°C
6
80 T J = 150°C

4
40
2

0 0
2 4 6 8 10 12 14 16 0 5 10 15 20
V GE (V) V GE (V)

Fig 5. Typical Transfer Characteristics Fig 6. VCE(ON) vs. Gate Voltage

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50 200

40 160

Repetitive Peak Current (A)

30 120
IC (A)

20 80

ton= 2μs
10 40 Duty cycle = 0.05
Half Sine Wave

0 0
0 25 50 75 100 125 150 25 50 75 100 125 150
TC (°C) Case Temperature (°C)

Fig 7. Maximum Collector Current vs. Case Temperature Fig 8. Typical Repetitive Peak Current vs. Case Temperature

1300 1300
VCC = 240V L = 220nH
1200 C = 0.4μF
L = 220nH 1200
1100 C = variable 100°C
Energy per Pulse (μJ)

Energy per Pulse (μJ)

1100 100°C
1000

900 1000
25°C
800 25°C
900
700
800
600
700
500

400 600
160 170 180 190 200 210 220 230 195 200 205 210 215 220 225 230 235 240

IC, Peak Collector Current (A) VCE, Collector-to-Emitter Voltage (V)

Fig 9. Typical EPULSE vs. Collector Current Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage

1600 100
VCC = 240V
C= 0.4μF
1400 L = 220nH
t = 1μs half sine
10 μs
Energy per Pulse (μJ)

1200 10 100 μs
IC (A)

1000
C= 0.3μF
1ms
1
800

600 C= 0.2μF

0.1
400 1 10 100 1000
25 50 75 100 125 150
V CE (V)
TJ, Temperature (ºC)

Fig 11. EPULSE vs. Temperature Fig 12. Forrward Bias Safe Operating Area
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10000 20
ID= 12A

VGE, Gate-to-Source Voltage (V)

16 VDS = 240V
VDS = 150V
VDS = 60V
Capacitance (pF)

1000 Cies
12

8
100

4
Coes

Cres
0
10
0 10 20 30 40
0 100 200
QG Total Gate Charge (nC)
VCE (V)

Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage

10
Thermal Response ( ZthJC )

1 D = 0.50

0.20
0.10 R1 R2 R3 R4 Ri (°C/W) τι (sec)
0.1 R1 R2 R3 R4
0.05 τJ τC 0.018158 0.000006
τJ τ
0.02 τ1 τ2 τ3 τ4
0.557463 0.00017
τ1 τ2 τ3 τ4
0.01 0.666413 0.001311
Ci= τi/Ri 0.305061 0.006923
0.01 Ci i/Ri

SINGLE PULSE Notes:

( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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A
RG C PULSE A
DRIVER

VCC PULSE B

B
Ipulse
RG
DUT
tST

Fig 16a. tst and EPULSE Test Circuit Fig 16b. tst Test Waveforms

VCE
Energy
L
IC Current VCC
DUT
0
1K

Fig 16c. EPULSE Test Waveforms Fig. 17 - Gate Charge Circuit (turn-off)

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D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)

D-Pak (TO-252AA) Part Marking Information

EXAMPLE: T HIS IS AN IRFR120
PART NUMBER
WIT H AS S EMBLY INT ERNAT IONAL
LOT CODE 1234 RECT IFIER IRFR120 DAT E CODE
AS S EMBLED ON WW 16, 2001 LOGO 116A YEAR 1 = 2001
IN T HE AS S EMBLY LINE "A" 12 34 WEEK 16
LINE A
Note: "P" in ass embly line pos ition AS S EMBLY
indicates "Lead-Free" LOT CODE
"P" in as s embly line position indicates
"Lead-Free" qualification to the cons umer-level

PART NUMBER
INT ERNAT IONAL
OR RECT IFIER IRFR120
DAT E CODE
P = DES IGNAT ES LEAD-FREE
LOGO PRODUCT (OPT IONAL)
12 34
P = DES IGNAT ES LEAD-FREE
AS S EMBLY PRODUCT QUALIFIED T O T HE
CONS UMER LEVEL (OPT IONAL)
LOT CODE
YEAR 1 = 2001
WEEK 16
A = AS S EMBLY S IT E CODE

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)

TR TRR TRL

16.3 ( .641 ) 16.3 ( .641 )

15.7 ( .619 ) 15.7 ( .619 )

12.1 ( .476 ) 8.1 ( .318 )

FEED DIRECTION FEED DIRECTION
11.9 ( .469 ) 7.9 ( .312 )

NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Data and specifications subject to change without notice.

This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/2010
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