93479
National
Semiconductor
93479
256 x 9-Bit Static Random Access Memory
General Description
‘The 99470 is a 2904-bit read/write Random Access Memmo-
1y RAM) crganzad as 256 word by ine Bs par word tis
idea suited for scratchped, smal butler and other appca-
tons whore the numberof requred word is small and
wher the numberof requred bits por word Is reatvely
large. The ninth bit can be used to provide party for 6
word systems
Fei
atures
'= Commercial addross timo
92470—45 ns max
99479A—35 ns max
1 Miltary address access time
9847960 ns max
90470A—45 ns max
‘= Common data input/output
1m Features TRLSTATE® output
Connection Diagrams
22-PIn Ceramle DIP
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ow:
Top View
Order Number 9347906, 93479800,
'93479DMQB or 93470ADMOB,
‘See NS Package Number J22A*
“Fer most curentpeckgsntraton, contac edict marating
‘Optional Processing QR ~ Burn in
Pin Names
‘AO-A7 ‘Adress Inputs
0a0-pa8 | Data input Outputs
oe Output Enable Input (Active LOW)
We Write Enable Input (Active LOW)
os Chip Select input (Active LOW) |
NC No Gonnect
ons
26-Pin Loc
2888822
18 2s
REBGEGE
sos 415 161748
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Top View
(Order Number 93479LMQB oF 93470ALMOB
‘See NS Package Number E28A*
“ermost rent package ntrmaton, conc product mashing,
Optional Processing QR = Burnin
Logic Symbol
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332Absolute Maximum Ratings
‘Above which tho usoful fe may be impaired
‘Storage Temperature =65'Ct0 + 150°C
‘Supply Voltage Range =05Vto +7.0V
Input Voltage (DC) (Notes 1,2) ~0.5V to Vag (RAMS)
=1.5V to Voc (PROM)
Voltage Applied to Outputs
(Notes 2, 3) =08V to +5.5V (RAMs)
(Output HIGH) 1.5V to + 8.5V (PROM)
Lead Temperature
(Goldering, 10 seconds) 900
Maximum Junction
Temperature (Ty) +1750
‘Output Current +20mA
Input Current (0) ~12mAto +5.0mA
Guaranteed Operating Ranges
‘Supply Voltage (Vcc)
Commercial Sov +5%
Miltary Sov + 10%
Case Temperature (To)
Commercial Cte +750
Miftary 55°C t0 +1250
Note: Ete nut Vlage tor put Cant i estan ope ergs
Note 2 Cup core rood.
Note 3: Typical vais a9 at Vo = SOV. To = +28 and maximum ong
Notes: Fnctoal esting done at ou ev Vi. = Vo. pa 45, Vet Vo guy (24.
Neto 6: AC tos done at ious Vi = 2, Vu =
Note 7: Short ere ground oto ened one 86nd
"Note 8: The maximum acess accss tn ie quart to be the wort case tin he cry king a peewrandom sng patio.
Note: y messed agg Minaya ty = Mi
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Logic Diagram
Pr
32 ewor ecu. waren
3240x9~ 2504
Functional Description
‘Tne 99470 afuly decoded 2004: random access mem-
Oy orpaized 250 words by rive bis. Word selection i
achivod by means ofan @-bt address AD~A7.
The Chip Select input provides for memory array expansion
For larger momores the fast chip solct access time por:
rts decoding without an increase n overall memory access
tre
Tho road and wite operations are contre by the sat of
the active LOW Write Enable (WE) input. With WE held
LOW: tho chip selactd andthe output csabed, tho dala at
1000-008 is wit ino the adressed locaton. Since tho
‘nit funeton's leva tiggeed, data must beheld stable for
At est tyson) Pls noe 0 Hau avai wt. To
read, WE is held HIGH, the chip selected and the output
‘enabled Non-nverted datas then presented atthe outputs
5o0-Dae.
Ma SELECT (1 OF 8)
0 /wRTE RCTS
‘The 99479 has TRISTATE outputs which provide an active
pull-up or pulldown when enabled and a high impedance
(HIGH Z) state when disabled. The active pull-ups provide
‘ve capability for high capactve loads while the high im-
edance stato allows optimization of word expansion in bus
‘organized systems.
Truth Table
Inputs Data in/out
oe | we) 000-Das ae)
x | H | x | HIGHZ | Ouputoisabieg
# | x | x | HiGh2 | Awoisabied
ufc | | dateou | Read
ctw} ct | catein | write
(CS Low verage Lovet
X= Dont Car GH or (OW
rae 2 ~ High impedance Sate
534)OC Electrical Characteristics over operating temperature ranges (Note 3)
i a Conaons tute [was [ae
Vou] Out tw vote | Yoo =n. = 807 asta a
Von | OuputncH vorge | Vor = Ming = -22nA [2a v
Scien ester one Guarriedreuthign vote] > y
feral Noten 480)
ve | moaLow vor Garand rputLOW Votape oe lv
teal olen 80
eae esatow oe Veo = Ne Vs 047 Eel wok an
ae iacmcdcnea Vee= Neca = 46 19 [0 [aa
tng [out Breaaown Curent | Veo = MV = Vou cl ies
Teen | OutCurent GHZ) | Voc = Max Your = 20 co] ea
ion Vee = Man Your = 084 oll te
Ve | cst Ga Vatane [Veo = Mas vi = 10 ma iat ray
‘cof tt Garon comaan -
‘Short Circuit to Ground a Laid
Toe | Power Supp Guret | Commend | Veo = mr = To
vena | atau ea
535)
6LvE693479
Commercial
AC Electrical Characteristics (nots 6) Voc = 5.0v +5%, GND
OV, To = Oto +75°0
‘Symbol Parameter Conditions a = Units:
in| Max wax
READ TIMING
‘acs | Chip Select Access Tine ra 2 | ne
tancs | Chip Selectto HIGH Z 2s 2s | ns
ios | Output Enable Access Time (ours 30, 6,30) 25 2s | ns
tenos | Output Enable to HIGH Z 2 2 | ons
oy Adeross Access Time (Note 8) 35 as | ns
‘WRITE TIMING
w Wie Pulse Width to Guarantee Writing
(Note 9) i a baa
te0 Output Enable Setup Tine 5 5 ns
0 Data Enable Hold Time Js Js ns
twso | Data Setup Time Prior to Write 25 25 ts
twHO- Data Hold Time after Write igwe) 5 5 ns
won| Adiress Setup Time Pico Weta : s ns
(vote 9)
twin | Address Hold Time aftr Weta 5 5 8
twscs | Chip Select Setup Time Porto Wrte 5 5 3
twiics | Chip Select Hold Time ator Wate 5 5 ns
Military
AC Electrical Characteristics woe avcc ~ 50v + 10%. GND = ov.
Symbo! Parameter Conditions Units
_ Min
READTIMING
‘cs | Chip Select Access Time 30 ~ |
temcs | Chip Selectto HIGH 20 40 | ts
taos | Oulu Enable Accoss Time (Fgures 30,3, $2) 20 40 | ts
tznos | OutputEnabie toHIGHZ 20 0 | te
tea Adress Access Time (Note 6) 45 oo | ne
‘Wevre TIMING
tw | Wt Pabo wide Gmaroo wing] e . .
(Note 9) 7
ts0 ‘Output Enable Setup Tine s | 5 8
to Deta Enable Hold Time 5 5 8
‘ws Data Setup Time Prior to Write 50, 50, ns
twHO. Data Hold Time after Write eee 10 10 ns
two | Adcress Setup Time Prior to Wto to ‘0
(Note 9) a
twa | Addr Hold Time ater Wet 10 10 ns
twacs | Chip Select Setup Time Proc to Wrte 10 10 ns
twcs | Chop Select Hold Time ator Write 10 10 ns
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TURE 1/AC Test Loed Output Loed FIGURE 2 AC Test put Levle
on sexscr
ono a
boat ruore-8
Dara OUTPUTS 0,
'b. Read Mode Propagation Delay from Address to Output ~
FIGURE 3. Read Mode Tring,93479
«. Read Mode Propagation Delay from Output Enable "
FIGURE 3. Read Made Timing (Continued)
‘Thee ning partes weeny necesay o guaran High 2 tat ding te entre wrt cy
FIGURE 4, Write Mode Ting
Note 1: Tining Dag roses one soliton which resus nan opm le ne. Tring may be charges varus aplication a ng asthe Wrst
‘ho ita er lt,
Note = put wotape evs for wernt cave AC ar 3.0/0.0.
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