Automotive Power & Discrete Solutions

Toshiba Electronics Europe GmbH

Oct 2020

© 2020 Toshiba Electronics Europe GmbH

Applications for Car Electronics

Key Products
1 LV MOSFET
Low loss process and small /
high heat dissipation package
2 SMOS MOSFET
Low loss semi power MOSFETs
in smallest package
3 Photocouplers
Long LED life time, lowest
supply current, large line-up

4 Logic ICs
Low voltage high speed
logic with extended
temperature range

© 2020 Toshiba Electronics Europe GmbH 1

Agenda

01 Automotive Mosfets (New Products)

02 Automotive Discrete Products

03 Automotive Photo Couplers

© 2020 Toshiba Electronics Europe GmbH 2

01
Automotive Mosfets
Package line-up
New MOSFET Product

© 2020 Toshiba Electronics Europe GmbH 3

Automotive MOSFET Application Example
Toshiba power MOSFETs support a various of automotive applications
DC-DC Converter (isolated type) 3 phase full-bridge for motor

Low voltage Reverse battery B6 Bridge

Secondary side protection 40V/100V MOSFETs
40V/100V MOSFETs -40V/-60V MOSFETs
© 2020 Toshiba Electronics Europe GmbH 4
Automotive Mosfet package line-up

400A／0.3mΩmax(Target@40V) TOGL*Under Development

for ISG／DCDC／relay MP Target: CY21

sTOGL*Under Development 10x12mm

MP Target: CY22

200A／0.66mΩmax(Target@40V) High current

for EPS／Low voltage DC/DC
ID (A)

7x8.8mmm
DSOP
Advance
5x6mm
Downsizing TO-220SM(W)
10x13mm

DPAK+ 250A／0.74mΩmax(@40V)
SOP 6.5x9.5mm
for ISG/EPS/DCDC
Advance
5x6mm
TSON
Advance
3.3x3.6mm
Package Area (mm2)

© 2020 Toshiba Electronics Europe GmbH 5

 TOGL(10x12mm) package under development
Gull wing TOGL is pin-to-pin compatible with flat lead TOLL

New Toshiba Package(TOLL replacement) TOGL Schedule and line-up plan

- 8-pin (pin-to-pin compatible with TOLL )
Chip VDSS ID Ron max
- 8 pins are gull wing . Gen. (V) (A) (mΩ) Vth(V) ES

N9 40 400 0.3 2.0-3.0 2Q/’21

N10 100 400 1.2 2.5-3.5 2Q/’21

© 2020 Toshiba Electronics Europe GmbH 6

 sTOGL(7x8mm) package under development
Gull wing sTOGL is pin-to-pin compatible with flat lead sTOLL

New Toshiba Package(sTOLL replacement) sTOGL Schedule and line-up plan

- 5-pin (pin-to-pin compatible with sTOLL )
- 5 pins are gull wing . Chip
Gen.
VDSS
(V)
ID
(A)
Ron max
(mΩ)
Vth
(V)
ES

N9 40 200 0.66 2.0-3.0 4Q/’21

sTOGL (Toshiba) sTOLL(Competitor)
N9 40 130 1.0 2.0-3.0 2Q/’22
2.3

© 2020 Toshiba Electronics Europe GmbH 7

 U-MOS series 100V N-ch power MOSFET
Low on-resistance contributes to reduce power consumption of system

1 Low loss (reduced chip resistance) 2 Small and high-heat-dissipation package

Using low chip resistance technology to contributes to Development of low-loss, high-heat-dissipation package by
reduced power consumption system Adopting a Cu connector structure
Wettable flanks package allows optical inspection of solder
joints

TO-220SM(W) SOP advance(WF) DSOP advance(WF)

(10x13mm) (5x6mm) (5x6mm)

Covered by plating or
mold resin overlap.

Covered by plating
© 2020 Toshiba Electronics Europe GmbH 8
 XK1R9F10QB: New product of 100V rating
New 100V N-channel device is the first to be produced in Toshiba’s new U-MOS X series

RDS(ON) – Tch
TK160F10N1L XK1R9F10QB
5
For reference
4

RDS(ON) (mΩ)
U-MOS 8 Approx. 25% reduction
3
U-MOS 10
2

1
Features
- New U-MOS X-H series of 100V N-channel 0
-100 -50 0 50 100 150 200
- RDS(on)max of just 1.92mΩ
Tch (degC)
- AEC-Q101 qualified
Advantages RDS(ON) max(mΩ)
- VDSS of 100V suitable for 48V system applications Product ID
Package Polarity Process
Name (A) VGS=10V VGS=6V
- Narrow Vth for easy parallel connection (Vth=2.5 to 3.5V)
- Gull-wing package for stress relief and good reliability UMOS8 TK160F10N1L 160 2.4 3.9
TO-220SM(W)
Benefits (10x13mm)
Nch
UMOS10 XK1R9F10QB 160 1.92 3.31 New
- Total power losses can be significantly reduced
- Use less MOSFETs when parallel connection for superior performance
- Smaller, more compact designs could be achieved
© 2020 Toshiba Electronics Europe GmbH 9
 New 5x6mm package of 100V rating: SOP-ADC(WF), DSOP-ADC(WF)
New 100V N-channel MOSFETs with 5x6 mm package for the first time

Double side cooling !

View SOP DSOP Advance(WF)
Advance(WF) 5.0mm
M L
Top

Bottom
6.0mm

- Same footprint SOP-ADC and DSOP-ADC

Features
- Wettable flanks package
- VDSS of 100 V RDS(ON) max(mΩ) Schedule
- RDS(ON) of just 4.1 mΩ Product ID
Package Polarity Process AEC-
Name VGS=10V VGS=6V ES
Advantages
(A)
Q101
- Automotive 100V N-channel XPH6R30ANB 45 6.3 9.5 - ✔ New
SOP advance(WF)
- Max. operating temperature of 175ºC suitable for automotive needs (5.0x6.0mm)
Benefits XPH4R10ANB 70 4.1 6.2 - ✔ New
Nch UMOS8
DSOP Advance (WF)M
- Wettable flanks package allows optical inspection of solder joints XPW6R30ANB 45 6.3 9.5 - ✔ New
(5.0x6.0mm)
- Suitable for 48V system applications DSOP Advance (WF)L
(XPW4R10ANB) 70 4.1 6.2 ✔ '20/4Q
(5.0x6.0mm)

© 2020 Toshiba Electronics Europe GmbH 10

 U-MOS series 40V N-ch power MOSFET
Low loss and low noise of U-MOS IX process enables smaller and more compact designs
Low loss (reduced chip resistance)
1 Low noise (low EMI) 2 Small, high-heat-dissipation package
Using low chip resistance technology to contribute to Development of low-loss, high-heat-dissipation package by
reduce power consumption system adopting a Cu connector structure
Optimized chip process, reduce surge voltage and ringing Wettable flanks package allows optical inspection of
time solder joints

UMOS8 UMOS9
U-MOS IV

U-MOS VIII

toff = 500ns
U-MOS IX VGS = +10/0V
VDD = 12 V
ID = 10A
RGS = 2.5kΩ

802ns 418ns

© 2020 Toshiba Electronics Europe GmbH 11

 New 5x6mm package of 40V rating: SOP-ADC(WF), DSOP-ADC(WF)
New 40V N-channel MOSFETs with 5x6 mm package for the first time

View SOP DSOP Advance(WF) Double side cooling !

Advance(WF)
M L 5.0mm
Top

Bottom

6.0mm
- Same footprint SOP-ADC and DSOP-ADC

Features RDS(ON) max(mΩ) Schedule

Product ID
- Wettable flanks package Package Polarity Process AEC-
Name (A) VGS=10V VGS=6V ES
Q101
- VDSS of 40 V
- RDS(ON) of just 0.79 mΩ XPH3R304PB (60) (3.3) (5.1) ✔ ‘20/4Q

Advantages XPH2R404PB (90) (2.4) (3.3) ✔ ‘20/4Q

SOP advance(WF)
- Automotive 40V N-channel (5.0x6.0mm)
TPH1R104PB 120 1.14 1.96 - ✔
- Max. operating temperature of 175ºC suitable for automotive needs
Nch UMOS9
Benefits TPHR7904PB 150 0.79 1.3 - ✔
- Wettable flanks package allows optical inspection of solder joints DSOP Advance (WF)M
TPW1R104PB 120 1.14 1.96 - ✔
- Narrow Vth for easy parallel connection (Vth=2.0 to 3.0V) (5.0x6.0mm)
DSOP Advance (WF)L
TPWR7904PB 150 0.79 1.3 - ✔
(5.0x6.0mm)
© 2020 Toshiba Electronics Europe GmbH 12
 New 3.3x3.6mm package of 40V/60V rating: TSON-ADC(WF)
Compact Low ON-Resistance N-Channel MOSFETs for automotive
Automotive-qualified devices curb power consumption to boost vehicle fuel economy
RDS(ON) max(mΩ)
VDSS Product ID
Package Polarity
(V) Name (A) VGS=10V VGS=4.5V

XPN7R104NC 20 7.1 14.2 New

40
XPN3R804NC 40 3.8 7.8 New
TSON advance(WF)
Nch
(3.3x3.6mm)
XPN12006NC 20 12 23.7 New
60
XPN6R706NC 40 6.7 13.3 New
Features
-VDSS of 40V and 60V N-channel for automotive
-Small and surface-mount package 3.3x3.6mm(typ)
-AEC-Q101 qualified
Advantages
-TSON Advance wettable flanks package allows optical inspection of solder joints
-Max. operating temperature of 175ºC suitable for automotive needs
Benefits
-Total power losses can be significantly reduced
-Smaller, more compact designs could be achieved
© 2020 Toshiba Electronics Europe GmbH 13
02
Automotive Discrete Products
SMOS (Semi Power & Small Signal MOSFET)
Logic IC

© 2020 Toshiba Electronics Europe GmbH 14

Toshiba Automotive Package

DSOP DPAK+
TO-220SM(W)
Advance

SOP
TSON Advance
Advance High current / high power dissipation
10 lineup
(Power device)
Power dissipation (W)

Semi-Power DFN2020 TSOP6F SOT-23H**

Package (SOT-1220)
Line-up

Expanded
ES6 UF6 SOT-23F Semi Power
VESM S-MINI
Lineup
Small MOSFET
Package USM
SSM
Line-up
(Small Signal Device)

０.1
０.1 1.0 10 100

Mounting area (mm2)

**Under development © 2020 Toshiba Electronics Europe GmbH 15
Small Signal MOSFET Package Development Schedule
Expansion of small package 175°C guaranteed products

2019 2020 2021 2022

Package size: 2x2

UDFN6 Low RDS(ON)・High 175°C MOSFET Line-up

heat dissipation

Package size: 2x2

DFN2020(WF)
175°C MOSFET Line-up

Package size: 2.9x2.4

Low RDS(ON)・High 175°C MOSFET Line-up
SOT-23F heat dissipation

Package size: 2.9x2.8

Low RDS(ON)・High 175°C MOSFET Line-up
TSOP6F heat dissipation

Development schedules may be subject to change without prior notice

In Production Under development
© 2020 Toshiba Electronics Europe GmbH 16
Appendix: SOT-23F Package
1. Excellent in heat dissipation than SOT-23/SC-96
Toshiba R1-company R2-company O-company
Package SOT-23F SC-96 SC-96 SOT-23
(2.9ｘ2.4mm) (2.9ｘ2.8mm) (2.9ｘ2.8mm) (2.9ｘ2.4mm)

Power Dissipation (PD) 2.0W 1.0W 1.25W 0.42w

* These values are announced according to each vendor’s condition's.

2. Assembly on standard SOT-23 foot pattern possible

A-company foot pattern B-company foot pattern C-company foot pattern
リード

Paste :Sn-Ag-Cu
Thickness :100um
Air reflow

© 2020 Toshiba Electronics Europe GmbH 17

Appendix: SOT-23F Package
3. Automotive reliability level for flat lead package is confirmed

Cross section
Mold resin
Cross Device mounted on:
section Lead Number of cycles: 3300
Temp.: -40°C~125°C vapor
Observation
Board: Glass epoxy 1.6mm thickness
Solder
directions

FR4 board

Detail sectional drawing lead

No cracks

© 2020 Toshiba Electronics Europe GmbH 18

Relay driver MOSFET
P/N SSM3K337R$ SSM3H137TU$ SSM3K347R$ SSM3K357R$

Internal
Zener
Structure
Pull down Pull down
resistance resistance
SOT-23F UFM (SOT-323F) SOT-23F SOT-23F
Package 2.9*2.4mm 2.1*2.0mm 2.9*2.4mm 2.9*2.4mm

Process U-MOS IV U-MOS IV U-MOS IV p-MOS IV

VDSS 43±5V 34~37V 43±5V 60V

VGSS ±20V ±20V ±20V ±12V
ID 2A 2A 2A 0.65A
@3V - - - 2.4Ω max
Ron @4V 0.20Ω max 0.30Ω max 0.48Ω max 1.8Ω max @5V
@10V 0.15Ω max 0.24Ω max 0.34Ω max -
EAS 4.5mJ 3.5mJ 2.2mJ 12.6mJ
ESD_HBM 2kV 2kV 2kV 2kV
Compatible to R-company Small package & High ESD Built-in Rpull-down Compatible to O-company
Features 2SK3408 tolerance SZNUD3160L

Type Active clamp type Active clamp type Active clamp type High avalanche type

$ High ESD protection Gate

© 2020 Toshiba Electronics Europe GmbH 19
Standard CMOS Logic Family Map

Above 5V High temp. range (Topr.=-40～125°C) for Automotive requirements

18V
CMOS Logic: 74VHC/TC74VHC,74LCX/TC74LCX
LMOS (Single Gate Logic): TC7SH/SET/WH,TC7SZ/WZ
4000
Series 5V
Supply Voltage Vcc(V)

Low Voltage
6.0V
5.5V 4S Applied to some
products
4W HC AC VHC
HCT ACT VHCT
3.6V VHCV
LCX VCX
3.0V 7S SH
7W SET SZ
SA
WH WZ
PA
2.0V 1.8V applied to
SG
1.65V some products
1.2V IOH/L: ±4mA ±4mA ±24mA ±8mA ±24mA ±24mA
(VHCV:16mA)
tpd: 100ns 23ns 8.5ns 8.5ns 5.2ns 2.5ns

Delay time

© 2020 Toshiba Electronics Europe GmbH 20

Standard CMOS Logic IC Package Line-up
TSSOP14/16/20,USV,US6,US8,SMV,ESV can support on Automotive requirement.

Dual Inline Surface mount package Surface mount Surface mount

package package package (Lead less)

DIP SOP SSOP TSSOP SM US UF ES fS VQON CST WCSP

5PIN SMV USV ESV fSV

6PIN US6 UF6 ES6 CST6 WCSP6

8PIN High temp. SM8 US8 CST8

operating range High temp.
10PIN 高温対応済
WCSP10
operating range
14PIN DIP14 SOP14 TSSOP14 US14

16PIN DIP16 SOP16 TSSOP16 US16 VQON16

20PIN DIP20 SOP20 TSSOP20 US20 VQON20

24PIN SSOP24 VQON24

48PIN TSSOP48

56PIN TSSOP56

© 2020 Toshiba Electronics Europe GmbH 21

 Automotive Application for CMOS Logic IC/ LMOS
 CMOS Logic IC
Over-
Bonding Screening ITEM
Classification Product name (Example) Temp AEC MP Application
Material
(Max) (Note 1)

74VHC00FT(BJ)
General Cu 125°C － × 〇
74VHC00FT(BE)

TB 74VHC00FT(TB,BJ) Cu 125°C － 〇 〇 Non-driving applications

Automotive
application
SPL-BI Driving applications
IDG TC74VHC00FT(IDGELK Au 125°C 〇 〇
TCT

 LMOS (Single Gate Logic)

Over-
Bonding
Classification Product name (Example) Temp AEC MP Comment
Material
(Max)

General TC7SH00FU,LJ(CT Cu 125°C × 〇

Automotive
application
XG TC7SH00FU,LXGJ(CT Cu 125°C 〇 〇 1000h/300cyc

(Note 1) (Note 1) Individual correspondence

© 2020 Toshiba Electronics Europe GmbH 22

03
Automotive Photo Couplers

© 2020 Toshiba Electronics Europe GmbH 23

Line-up Automotive Couplers

© 2020 Toshiba Electronics Europe GmbH 24

Application Example: Inverter

System Block: Recommended Devices:

© 2020 Toshiba Electronics Europe GmbH 25

Application Example: DC-DC Converter

System Block: Recommended Devices:

© 2020 Toshiba Electronics Europe GmbH 26

Application Example: BMS – Battery Management System

System Block: Recommended Devices:

© 2020 Toshiba Electronics Europe GmbH 27

Application Block Diagrams
Application Block Diagrams for applications requiring Isolation

https://toshiba.semicon-storage.com/eu/semiconductor/application.html

© 2020 Toshiba Electronics Europe GmbH 28

Package and Construction of Toshiba Automotive Couplers
Toshiba Automotive Couplers are in 4pin SO6 and SO4 packages
Construction SO6/SO4: Features:
• Creepage/clearance distance ≥5mm
Detector • Internal isolation thickness ≥0.4mm
• Low-profile package ≤2.3mm
• Isolation voltage = 3750Vrms (min)

Dimension:
SO6 SO4
LED
4pin
2.3 mm

≧5mm

≧0.4mm

unit：mm © 2020 Toshiba Electronics Europe GmbH 29

Toshiba Automotive IC-Couplers
Features TLX9309 TLX9304 TLX9310 TLX9378 TLX9376

Schematic

Truth table

Propagation Delay time tpHL (max.) 800 ns 400 ns 250 ns 100 ns 35 ns

Propagation Delay time tpLH (max.) 1000 ns 550 ns 250 ns 100 ns 35 ns

Switching time dispersion (tpHL-

700 ns 400 ns 50 ns 30 ns 12 ns
tpLH) (max.)

Common mode transient immunity

+/- 10 kV/µs +/- 15 kV/µs +/- 15 kV/µs +/- 15 kV/µs +/- 15 kV/µs
(min.)

Isolation Voltage BVs 3750 Vrms 3750 Vrms 3750 Vrms 3750 Vrms 3750 Vrms

Note: values are subject to change.

For details and test condition please refer to latest datasheets.

© 2020 Toshiba Electronics Europe GmbH 30

Toshiba Automotive Transistor Couplers
Features TLX9185A TLX9291A TLX9300 TLX9000

Schematic

Package SO6 4-pin SO4 SO6 4-pin SO4

Collector-Emitter Voltage 80 V (min.) 80 V (min.) 40 V (min.) 40 V (min.)

50-600 % 50-600 %
Current Transfer Ratio 100-900 % 100-900 %
GB: 100-600 % GB: 100-600 %
100/200/300 µs 100/200/300 µs
Guaranteed ton/ts/toff max - - (test condition: RL=10k, (test condition: RL=10k,
VCC=5V, IF=2mA) VCC=5V, IF=2mA)

Operating Temperature Range Topr -40 to 125°C -40 to 125°C -40 to 125°C -40 to 125°C

Isolation Voltage 3750 Vrms 3750 Vrms 3750 Vrms 3750 Vrms

Note: values are subject to change.

For details and test condition please refer to latest datasheets.

© 2020 Toshiba Electronics Europe GmbH 31

Toshiba Automotive Photovoltaic Couplers

Test TLX9905 TLX9906

Characteristics Features:
Condition Min. Typ. Min. Typ.
• Extended temperature range: - 40 to +125 °C
Open Circuit IF = 10mA, Ta
7V 9V 7V 9V
Voltage VOC = 25°C • Isolation Voltage: 3750 Vrms (min.)
Open Circuit IF = 10mA, Ta
4V 5V 4V 5V
• Embedded discharge circuit for fast switching
Voltage VOC = 125°C included in TLX9906
Short Circuit IF = 10mA, Ta
12 µA 30 µA 12 µA 30 µA
Current ISC = 25°C
Short Circuit IF = 10mA, Ta Applications:
6 µA 12 µA 6 µA 12 µA
Current ISC = 125°C • MosFET Gate Drive
Trigger LED • Battery Monitoring
VOC ≥ 5V 3 mA (max.)
Current IFT (max.)
• Telematics System
Turn On Time ton IF = 10mA,
0.3 ms 0,2 ms
(typ.) CL=1000pF

Turn Off Time toff IF = 10mA,

1 ms 0,3 ms
(typ.) CL=1000pF

Isolation Voltage
AC, 60s 3750 Vrms
BVs (min.)

Note: values are subject to change.

For details and test condition please refer to latest datasheets.

© 2020 Toshiba Electronics Europe GmbH 32

Toshiba Automotive Photovoltaic Couplers
Application:
• Gate Drive Circuits without external power supply
• Photovoltaic Couplers have an integrated photo diode array, which generates an
electric voltage by receiving light from the LED.

Operation of Photovoltaic Photocouplers:

External power Supply is not needed!
1. Apply a voltage on the input
↓ ① External power supply
2. LED lights up
↓
3. Light from the LED is received ② Load e.g.
④
by the photo diodes ③ MOSFET
↓
4. Electric voltage generated by the
photo diodes enters the gate
and drives the MOSFET
Photo Diode Array receives light from
the LED and generates electricity!

© 2020 Toshiba Electronics Europe GmbH 33

Toshiba Automotive Photorelay TLX9175J

• Nomally Open (1 Form A)

• Peak off state voltage: 600V (min.)
• Trigger LED current: 3mA (max.)
• On state current: 15mA (max.)
• On state resistance: 335 Ohm (max t<1s)
• Operating temp. Range: -55 to 105 °C
• 4pin SO6 package
• Isolation Voltage: 3750Vrms (min.)

© 2020 Toshiba Electronics Europe GmbH 34

Thank you.

© 2020 Toshiba Electronics Europe GmbH 35

© 2020 Toshiba Electronics Europe GmbH