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Quantum Dot-Sensitized Solar Cells Photovoltaic Properties and Photoexcited Carrier Dynamics
Quantum Dot-Sensitized Solar Cells Photovoltaic Properties and Photoexcited Carrier Dynamics
80 mM CdSO4
120 mM N(CH2COONa)3
80 mM Na2SeSO3 0.1 M Zn(CH3COO)2 0.1 M Na2S
2) S. Gorer and G. Hodes, J. Phys. Chem. 98 (1994) 5338. 3) S.M.Yang et al., J. Mater. Chem. 12 (2002) 1459.
Improvement
Electrode Structure
FTO FTO
evaporated slowly at
40oC
P.10
Sample:TiO2/CdSe/ZnS
TiO2
CdSe
Photoacoustic Spectra
Wavelength (nm)
Norm. PA intensity (arb.units)
Bulk CdSe
CdS (bulk) : Eg= 2.4 eV
1 CdSe (bulk) : Eg= 1.7 eV
E1
0.1 TiO2
CdS (0.5h)
CdSe (6h)
CdS (0.5h)/CdSe (6h)
1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 Effective mass apprpximation1)
Photon energy (eV)
h2π 2
Estimation of average size of each ∆E = E1 − E g = ( D = 2a )
2µa 2
quantum dots 1 1 1 me : electron effective mass
= +
CdS QDs : 4.4 nm (0.5 h) µ me mh mh : hole effective mass
E1 : first excited energy
CdSe QDs : 7.0 nm (6 h) 1) L. E. Brus, J. Chem. Phys. 80 (1984) 4403.
IPCE Spectra
Wavelength (nm)
800 700 600 500 400 300
TiO2
80 CdS (0.5h)
CdSe (6h)
CdS (0.5h)/CdSe (6h)
60
IPCE (%)
40
20
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Photon energy (eV)
Adsoption of CdS QDs at 0.5 hours and CdSe QDs at 6 hours (multi-layered)
shows higher IPCE value than CdSe QDs (single-layered) at 6 hours.
55 % → 75 %
Photovoltaic Performance
Voltage
FTO spacer Cu2S
J-V Characteristics
Photocurrent Density (mA/cm2) 12
TiO2 (IO)/CdS (0.5h)/CdSe (6h)
TiO2 (IO) /CdSe (6h)
10
4
FTO
2
0
0.0 0.2 0.4 0.6 0.8
Voltage (V)
3
2
1 Ti
0
0. 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6
Vol t age ( V)
CdS/CdSe
CdSe(3h)
CdSe/CdS
Improved Transient Grating (TG) Technique
Detailed understanding of photoexcited carrier dynamics is required to understand and
improve photovoltaic properties of solar cells, that is satisfied using
ultrafast transient grating technique.
Titanium/sapphire laser
wavelength: 775 nm; pulse width: 150 fs; intensity: 2 µJ/pulse
Optical delay line
Probe beam
OPG/OPA
Advantages
Easy and compact.
Chopper
High sensitivity.
Grating → Measurements under
Sample low pump intensity.
Suitable for rough surfaces or
optically scattering samples.
K. Katayama et al., Appl. Phys. Lett. 82 (2003)
Lock-in Amplifier 2775.
TG response in IO TiO2/CdSe electrode1)
Norm.TG signal (arb. units)
1 ① In air relaxation ②
(electron transfer, trap)
② CdSe QD
LUMO - CB
HOMO + IO TiO2
1 ①
② In air relaxation ②
(electron transfer, trap)
CdSe QD
LUMO -
CdS QD CB
HOMO +
IO TiO2
relaxation ① VB
TiO2(IO)/CdSe (6h) (hole trap)
0.1 TiO2(IO)/CdS (0.5h)/CdSe (6h)
0 20 40 60 80 100
Time (ps)
Faster relaxation process can be observed in relaxation ② on
TiO2/CdS/CdSe electrode than that of CdSe.
y (t ) Sample
= A1e − t / τ 1 + A2 e −τ1t /(ps)
τ2
+ yτ02 (ps)
TiO2(IO)/CdSe (6 h) 8±1 98 ±10
TiO2(IO)/CdS (0.5①h)/CdSe(6 h) ② 9±1 67 ±7
Velocity constant in electron relaxation processes
IO TiO2/CdS/CdSe electrode CdSe QD
・ decrease in relaxation time τ2 in CdSe QDs. LUMO -
CdS
CB
HOMO QD
10 -1
sample τ2 (ps) k2 (10 s ) IOTiO2
TiO2/CdSe 98 1.0
TiO2/CdS/CdSe 67 1.5 50% increase VB
6 JSC VOC η
Electrode FF
(mA/cm2) (V) (%)
4
Inverse Opal 7.4 0.69 0.60 3.2
2 Nanocrystal 9.1 0.52 0.49 2.2
0
0.0 0.2 0.4 0.6 0.8
Voltage (V)