Design Note 4 Design Note 4

Issue 2 June 1995 Issue 2 June 1995

Temperature Effects On Silicon Semiconductor DARLINGTONS

Parameter Temperature Coefficient Comment
Devices hFE +0.5 to 1.6%/°C In active region at low to medium currents
+ or - about zero (small) (due to inability In saturation region
to saturate fully)
VCE(sat) + or - about zero (small)
VBE(on) -0.2%/°C
VCBO +0.08%/°C
Many applications require reliable This design note provides a general
circ uit operation over a wide indication of the effects of temperature VEBO +0.04%/°C

temperature range. Automotive on silicon devices, and lists typical ICEO Approx x2 per 8-10 °C rise. Dependent on voltage as well as temperature
environments for example may temperature coefficients for the main
experience a range of -40°C to +125°C, parameters. This information is based MOSFETS
while a more usual industrial range may on known physical effects, and Parameter Temperature Coefficient Comment
b e - 1 0 ° C t o 8 5 ° C . T o e ns u r e t h a t measurements conducted previously. VDSS +0.04 to 0.1%/°C Increases with resistivity (BVDSS)
electronic components and systems The latter applies when either the device RDS(ON) +0.7 to 1.0%/°C
behave satisfactorily, the design process textbooks do not consider the VGS(TH) -0.1 to 0.2%/°C
must include consideration of device de vice/parameter of interest, or a IDSS Approx x2 per 11°C rise
parameter variation with temperature, in product specific measurement is gfs Small ( say -0.2% / °C)
particular those parameters which affect required. Obviously for such a general
Vf (of body diode) -2 to 2.5mV/°C
leakage currents, drive conditions, guide, these values must be considered
on-state loss es, and switching as approximate, but will probably be dV/dT capability falls as temperature increases. Switching speed does not alter significantly.
performance. adequate in many cases.
DIODES
BIPOLAR (except Darlingtons) Parameter Temperature Coefficient Comment
VSS -1.9 to 2.2mV/°C
Parameter Temp. Coefficient Comment BSS +0.7 to 0.09%/°C
hFE +0.3 to 0.6%/°C In active region at low to medium currents
Negative At high currents. Cross over point falls as IC and Breakdown Voltage Increases VARICAP/VARACTOR DIODES
-0.25%/°C In saturation region
Parameter Temperature Coefficient Comment
VBE(sat) -0.15%/°C
Capacitance Abrupt:280 ppm @ 4V; 100 ppm @ 20V Very dependent on bias voltage
VBE(on) -1.9 to 2.2 mV/°C PNP tend to be higher than NPN
Hyperabrupt:350 ppm @ 3V; 80 ppm @ 20V
VCE(sat) +0.23 to 0.4%/°C Small signal devices (eg ZTX300)
0.12 to 0.15%/°C Medium power devices (eg ZTX650) VOLTAGE REFERENCE DIODES
VCBO(VCES) +0.07 to 0.09%/°C
VCEO + or - about zero (Eg. can be small, but very device dependent) Parameter Temperature Coefficient Comment
VEBO +0.04%/°C VZ -0.06%/°C 3.3V(Field effect)
Nominally zero 5.0V
ICBO. x2 per 11°C +0.075%/°C 12.0V (Avalanche effect)
ICEO Approx x4 per11°C rise Very dependent on hFE 0.2%/°C 24.0V (Avalanche effect)
ICER(10k) Approx x3 per 11°C rise
td and tr Independent SCHOTTKY DIODES
ts +1.4 to 1.6%/°C Parameter Temperature Coefficient Comment
tf +1.0 to 2.5%/°C VF -1.2mV/°C

DN4-1 DN4-2
 Design Note 4 Design Note 4
Issue 2 June 1995 Issue 2 June 1995

Temperature Effects On Silicon Semiconductor DARLINGTONS

Parameter Temperature Coefficient Comment
Devices hFE +0.5 to 1.6%/°C In active region at low to medium currents
+ or - about zero (small) (due to inability In saturation region
to saturate fully)
VCE(sat) + or - about zero (small)
VBE(on) -0.2%/°C
VCBO +0.08%/°C
Many applications require reliable This design note provides a general
circ uit operation over a wide indication of the effects of temperature VEBO +0.04%/°C

temperature range. Automotive on silicon devices, and lists typical ICEO Approx x2 per 8-10 °C rise. Dependent on voltage as well as temperature
environments for example may temperature coefficients for the main
experience a range of -40°C to +125°C, parameters. This information is based MOSFETS
while a more usual industrial range may on known physical effects, and Parameter Temperature Coefficient Comment
b e - 1 0 ° C t o 8 5 ° C . T o e ns u r e t h a t measurements conducted previously. VDSS +0.04 to 0.1%/°C Increases with resistivity (BVDSS)
electronic components and systems The latter applies when either the device RDS(ON) +0.7 to 1.0%/°C
behave satisfactorily, the design process textbooks do not consider the VGS(TH) -0.1 to 0.2%/°C
must include consideration of device de vice/parameter of interest, or a IDSS Approx x2 per 11°C rise
parameter variation with temperature, in product specific measurement is gfs Small ( say -0.2% / °C)
particular those parameters which affect required. Obviously for such a general
Vf (of body diode) -2 to 2.5mV/°C
leakage currents, drive conditions, guide, these values must be considered
on-state loss es, and switching as approximate, but will probably be dV/dT capability falls as temperature increases. Switching speed does not alter significantly.
performance. adequate in many cases.
DIODES
BIPOLAR (except Darlingtons) Parameter Temperature Coefficient Comment
VSS -1.9 to 2.2mV/°C
Parameter Temp. Coefficient Comment BSS +0.7 to 0.09%/°C
hFE +0.3 to 0.6%/°C In active region at low to medium currents
Negative At high currents. Cross over point falls as IC and Breakdown Voltage Increases VARICAP/VARACTOR DIODES
-0.25%/°C In saturation region
Parameter Temperature Coefficient Comment
VBE(sat) -0.15%/°C
Capacitance Abrupt:280 ppm @ 4V; 100 ppm @ 20V Very dependent on bias voltage
VBE(on) -1.9 to 2.2 mV/°C PNP tend to be higher than NPN
Hyperabrupt:350 ppm @ 3V; 80 ppm @ 20V
VCE(sat) +0.23 to 0.4%/°C Small signal devices (eg ZTX300)
0.12 to 0.15%/°C Medium power devices (eg ZTX650) VOLTAGE REFERENCE DIODES
VCBO(VCES) +0.07 to 0.09%/°C
VCEO + or - about zero (Eg. can be small, but very device dependent) Parameter Temperature Coefficient Comment
VEBO +0.04%/°C VZ -0.06%/°C 3.3V(Field effect)
Nominally zero 5.0V
ICBO. x2 per 11°C +0.075%/°C 12.0V (Avalanche effect)
ICEO Approx x4 per11°C rise Very dependent on hFE 0.2%/°C 24.0V (Avalanche effect)
ICER(10k) Approx x3 per 11°C rise
td and tr Independent SCHOTTKY DIODES
ts +1.4 to 1.6%/°C Parameter Temperature Coefficient Comment
tf +1.0 to 2.5%/°C VF -1.2mV/°C

DN4-1 DN4-2