Power Transistors

2SC5412
Silicon NPN triple diffusion mesa type

For horizontal deflection output

Unit: mm

15.5±0.5 3.0±0.3
φ3.2±0.1
■ Features

4.5

10.0
5° 5°
● High breakdown voltage, and high reliability through the use of a

26.5±0.5
glass passivation layer

22.0±0.5
23.4
2.0 1.2
● High-speed switching
● Wide area of safe operation (ASO) 5°
5°
4.0
5°
2.0±0.2

2.0
18.6±0.5
■ Absolute Maximum Ratings (TC=25˚C) 1.1±0.1
0.7±0.1
Parameter Symbol Ratings Unit
5.45±0.3 5.45±0.3
Collector to base voltage VCBO 1700 V

5.5±0.3
0.7±0.1
3.3±0.3
VCES 1700 V 5°
Collector to emitter voltage
VCEO 600 V
Emitter to base voltage VEBO 5 V

2.0
1 2 3 1:Base
Peak collector current ICP 8 A 2:Collector
3:Emitter
Collector current IC 4 A
TOP–3E Full Pack Package
Base current IB 3 A
Collector power TC=25°C 50
PC W
dissipation Ta=25°C 3
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 to +150 ˚C

■ Electrical Characteristics (TC=25˚C)

Parameter Symbol Conditions min typ max Unit

VCB = 1000V, IE = 0 50 µA
Collector cutoff current ICBO
VCB = 1700V, IE = 0 1 mA
Emitter cutoff current IEBO VEB = 5V, IC = 0 50 µA
Forward current transfer ratio hFE VCE = 5V, IC = 2.5A 5 12
Collector to emitter saturation voltage VCE(sat) IC = 2.5A, IB = 625mA 3 V
Base to emitter saturation voltage VBE(sat) IC = 2.5A, IB = 625mA 1.5 V
Transition frequency fT VCE = 10V, IC = 0.1A, f = 0.5MHz 3 MHz
Storage time tstg 4.0 µs
IC = 2.5A, IB1 = 625mA, IB2 = 1.25A
Fall time tf 0.3 µs

1
Power Transistors 2SC5412

PC — Ta Area of safe operation (ASO) Area of safe operation, horizontal operation ASO
100 100 14
(1) TC=Ta f=64kHz, TC<90˚C
(2) With a 100 × 100 × 2mm Area of safe operation with
Collector power dissipation PC (W)

90 10ms
Al heat sink 12 respect to the single pulse
(3) Without heat sink ICP t=100µs overload curve at the time of
80 10

Collector current IC (A)

Collector current IC (A)

IC switching ON, shutting down
1ms 10 by the high voltage spark,
70
holding down and like that,
DC during horizontal operation.
60 1
8
(1)
50
6
40 0.1

30 4

20 0.01

VCEO max.
(2) 2
10
(3)
<1mA
0 0.001 0
0 20 40 60 80 100 120 140 160 1 3 10 30 100 300 1000 0 500 1000 1500 2000
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector to emitter voltage VCE (V)