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SEMICONDUCTOR TECHNICAL DATA by MPSA05/D

  
COLLECTOR COLLECTOR  
3 3
 
2
BASE
2
BASE
 
NPN PNP  
1
EMITTER
1
EMITTER  
MAXIMUM RATINGS Voltage and current are negative
for PNP transistors
MPSA05 MPSA06
Rating Symbol MPSA55 MPSA56 Unit
*Motorola Preferred Device
Collector – Emitter Voltage VCEO 60 80 Vdc
Collector – Base Voltage VCBO 60 80 Vdc
Emitter – Base Voltage VEBO 4.0 Vdc
Collector Current – Continuous IC 500 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C 1
2
3
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range
CASE 29–04, STYLE 1
THERMAL CHARACTERISTICS TO–92 (TO–226AA)

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) MPSA05, MPSA55 60 —
MPSA06, MPSA56 80 —
Emitter – Base Breakdown Voltage V(BR)EBO 4.0 — Vdc
(IE = 100 µAdc, IC = 0)
Collector Cutoff Current ICES — 0.1 µAdc
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current ICBO µAdc
(VCB = 60 Vdc, IE = 0) MPSA05, MPSA55 — 0.1
(VCB = 80 Vdc, IE = 0) MPSA06, MPSA56 — 0.1

1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width v
300 ms, Duty Cycle v
2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
         
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain hFE —
(IC = 10 mAdc, VCE = 1.0 Vdc) 100 —
(IC = 100 mAdc, VCE = 1.0 Vdc) 100 —
Collector – Emitter Saturation Voltage VCE(sat) — 0.25 Vdc
(IC = 100 mAdc, IB = 10 mAdc)
Base–Emitter On Voltage VBE(on) — 1.2 Vdc
(IC = 100 mAdc, VCE = 1.0 Vdc)

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product(3) fT MHz
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz) MPSA05 100 —
MPSA06

(IC = 100 mAdc, VCE = 1.0 Vdc, f = 100 MHz) MPSA55 50 —

MPSA56

3. fT is defined as the frequency at which |hfe| extrapolates to unity.

TURN–ON TIME TURN–OFF TIME

–1.0 V VCC +VBB VCC
+40 V +40 V

5.0 ms 100 RL 100 RL

+10 V OUTPUT OUTPUT
Vin RB Vin RB

t 6.0 pF t 6.0 pF
0
tr = 3.0 ns * CS * CS
5.0 mF 5.0 mF
100 100
5.0 ms

tr = 3.0 ns

* Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

Figure 1. Switching Time Test Circuits

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

          
NPN PNP

f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)

f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)

300 200
VCE = 2.0 V VCE = –2.0 V
200 TJ = 25°C TJ = 25°C

100

70
100

50
70

50
30

30 20
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 2. MPSA05/06 Current–Gain — Figure 3. MPSA55/56 Current–Gain —

Bandwidth Product Bandwidth Product

80 100
TJ = 25°C TJ = 25°C
60 70

40 50 Cibo
C, CAPACITANCE (pF)

C, CAPACITANCE (pF)

Cibo 30
20
20

10
8.0 10 Cobo
6.0 Cobo 7.0

4.0 5.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 4. MPSA05/06 Capacitance Figure 5. MPSA55/56 Capacitance

1.0 k 1.0 k
700 700
500 500
ts ts
300 300
200 200
t, TIME (ns)
t, TIME (ns)

100 100
70 tf 70 tf
50 50
VCC = 40 V VCC = –40 V
30 IC/IB = 10 tr 30 IC/IB = 10
20 IB1 = IB2 20 IB1 = IB2
TJ = 25°C td @ VBE(off) = 0.5 V TJ = 25°C td @ VBE(off) = –0.5 V tr
10 10
5.0 7.0 10 20 30 50 70 100 200 300 500 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 6. MPSA05/06 Switching Time Figure 7. MPSA55/56 Switching Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

         
NPN PNP

1.0 k –1.0 k
700 100 ms –700 100 ms
500 1.0 ms –500 1.0 ms
I C , COLLECTOR CURRENT (mA)

I C , COLLECTOR CURRENT (mA)

300 1.0 s –300 1.0 s
200 TC = 25°C –200 TC = 25°C
TA = 25°C TA = 25°C
100 –100
70 –70
50 CURRENT LIMIT –50 CURRENT LIMIT
THERMAL LIMIT THERMAL LIMIT
30 –30
SECOND BREAKDOWN LIMIT SECOND BREAKDOWN LIMIT
20 –20
MPSA05 MPSA55
MPSA06 MPSA56
10 –10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 8. MPSA05/06 Active–Region Safe Figure 9. MPSA55/56 Active–Region Safe

Operating Area Operating Area

400 400

TJ = 125°C TJ = 125°C
VCE = 1.0 V VCE = –1.0 V

200 200
h FE , DC CURRENT GAIN

h FE, DC CURRENT GAIN

25°C 25°C

–55°C
–55°C
100 100
80 80

60 60

40 40
0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 10. MPSA05/06 DC Current Gain Figure 11. MPSA55/56 DC Current Gain

1.0 –1.0
TJ = 25°C TJ = 25°C

0.8 VBE(sat) @ IC/IB = 10 –0.8 VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

0.6 –0.6
VBE(on) @ VCE = 1.0 V VBE(on) @ VCE = –1.0 V

0.4 –0.4

0.2 –0.2
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10

0 0
0.5 1.0 2.0 5.0 10 20 50 100 200 500 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 12. MPSA05/06 “ON” Voltages Figure 13. MPSA55/56 “ON” Voltages

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

          
NPN PNP

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 –1.0
TJ = 25°C TJ = 25°C

0.8 –0.8
IC = IC = IC = IC = IC = IC = IC = IC =
50 mA 100 mA 250 mA 500 mA –50 mA –100 mA –250 mA –500 mA
0.6 –0.6

0.4 –0.4

IC = IC =
0.2 10 mA –0.2 –10 mA

0 0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)

Figure 14. MPSA05/06 Collector Saturation Figure 15. MPSA55/56 Collector Saturation
Region Region

–0.8 –0.8
R qVB , TEMPERATURE COEFFICIENT (mV/° C)

–1.2 R qVB , TEMPERATURE COEFFICIENT (mV/° C) –1.2

–1.6 –1.6

–2.0 RqVB for VBE –2.0 RqVB for VBE

–2.4 –2.4

–2.8 –2.8
0.5 1.0 2.0 5.0 10 20 50 100 200 500 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 16. MPSA05/06 Base–Emitter Figure 17. MPSA55/56 Base–Emitter

Temperature Coefficient Temperature Coefficient

1.0
0.7 D = 0.5
0.5
r(t), NORMALIZED TRANSIENT
THERMAL RESISTANCE

0.3 0.2
0.2 0.1
0.05 ZθJC(t) = r(t) • RθJC
TJ(pk) – TC = P(pk) ZθJC(t)
0.1 P(pk)
SINGLE PULSE 0.02 0.01 ZθJA(t) = r(t) • RθJA
0.07
TJ(pk) – TA = P(pk) ZθJA(t)
0.05 t1 D CURVES APPLY FOR
0.03 SINGLE PULSE t2 POWER PULSE TRAIN
SHOWN READ TIME AT t1
0.02
DUTY CYCLE, D = t1/t2 (SEE AN469)
0.01
1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

t, TIME (ms)

Figure 18. MPSA05, MPSA06, MPSA55 and MPSA56 Thermal Response

Motorola Small–Signal Transistors, FETs and Diodes Device Data 5

         
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 1:
CASE 029–04 PIN 1. EMITTER
2. BASE
(TO–226AA) 3. COLLECTOR
ISSUE AD

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*MPSA05/D*
6 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPSA05/D