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SUM110N03-03P N-Channel 30-V (D-S) 175 - C MOSFET: Vishay Siliconix
SUM110N03-03P N-Channel 30-V (D-S) 175 - C MOSFET: Vishay Siliconix
Vishay Siliconix
FEATURES
PRODUCT SUMMARY D TrenchFETr Power MOSFET
V(BR)DSS (V) rDS(on) (W) ID (A)a D 175_C Junction Temperature
D Optimized for Low-Side Synchronous Rectifier
0.0026 @ VGS = 10 V 110a
30 D 100% Rg Tested
0.004 @ VGS = 4.5 V 110a
APPLICATIONS
D Desktop or Server CPU Core
D
TO-263
N-Channel MOSFET
TC = 25_C 110a
Continuous Drain Current (TJ = 175_C) ID
TC = 100_C 110a
A
Pulsed Drain Current IDM 400
Avalanche Current IAR 65
Repetitive Avalanche Energyb L = 0.1 mH EAR 211 mJ
TC = 25_C (TO-220AB and TO-263) 375c
Maximum Power Dissipationb PD W
TA = 25_C (TO-263)d 3.75
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 175 _C
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 30
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 2 3
VDS = 30 V, VGS = 0 V 1
Dynamicb
Input Capacitance Ciss 12100
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1910 pF
Reverse Transfer Capacitance Crss 1250
Total Gate Chargeb Qg 172 250
Gate-Source Chargeb Qgs VDS = 15 V,, VGS = 10 V,, ID = 110 A 40 nC
Gate-Drain Chargeb Qgd 22
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
VGS = 10 thru 5 V
200
160
I D − Drain Current (A)
100
80
TC = 125_C
50
40
3V 25_C −55_C
0
0
0 2 4 6 8 10
0 1 2 3 4 5
200
r DS(on) − On-Resistance ( W )
0.0045
g fs − Transconductance (S)
25_C
TC = −55_C
150 VGS = 4.5 V
0.0030
125_C
100 VGS = 10 V
0.0015
50
0 0.0000
0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120
12000 8 ID = 85 A
C − Capacitance (pF)
9000 6
6000 4
Coss
3000 2
Crss
0 0
0 6 12 18 24 30 0 30 60 90 120 150 180
1.2 TJ = 150_C
10
TJ = 25_C
0.8
0.4
0.0 1
−50 −25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
38 ID = 10 mA
V(BR)DSS (V)
36
34
32
30
−50 −25 0 25 50 75 100 125 150 175
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
120 1000
10 ms
Limited 100 ms
100
by rDS(on)
100
I D − Drain Current (A)
10 ms
60 10
100 ms
dc
40
1 TC = 25_C
20 Single Pulse
0 0.1
0 25 50 75 100 125 150 175 0.1 1 10 100
TC − Ambient Temperature (_C) VDS − Drain-to-Source Voltage (V)
1
Duty Cycle = 0.5
Normalized Effective Transient
0.2
Thermal Impedance
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4 10−3 10−2 10−1 1 10
Square Wave Pulse Duration (sec)
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