AO4828

60V Dual N-Channel MOSFET

General Description Features

The AO4828 uses advanced trench technology to VDS (V) = 60V

provide excellent RDS(ON) and low gate charge. This ID = 4.5A (VGS = 10V)
device is suitable for use as a load switch or in PWM RDS(ON) < 56mΩ (VGS = 10V)
applications. RDS(ON) < 77mΩ (VGS = 4.5V)

100% UIS tested

100% Rg tested

SOIC-8 D D
Top View Bottom View 1 2
Top View

S2 D2
G2 D2
S1 D1
G1 D1 G1 G2

S1 S2

Pin1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 4.5
AF
Current TA=70°C ID 3.6 A
Pulsed Drain Current B IDM 20
TA=25°C 2
PD W
Power Dissipation TA=70°C 1.28
Avalanche Current B IAR, IAS 19 A
B
Repetitive avalanche energy 0.1mH EAR, EAS 18 mJ
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 35 60 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4828

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 V
VDS=60V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 2.1 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 20 A
VGS=10V, ID=4.5A 46 56
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 80 100
VGS=4.5V, ID=3A 64 77 mΩ
gFS Forward Transconductance VDS=5V, ID=4.5A 11 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 V
IS Maximum Body-Diode Continuous Current 3 A
ISM Pulsed Body Diode Current B 20 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 450 540 pF
Coss Output Capacitance VGS=0V, VDS=30V, f=1MHz 60 pF
Crss Reverse Transfer Capacitance 25 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.3 1.65 2 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 8.5 10.5 nC
Qg(4.5V) Total Gate Charge 4.3 5.5 nC
VGS=10V, VDS=30V, ID=4.5A
Qgs Gate Source Charge 1.6 nC
Qgd Gate Drain Charge 2.2 nC
tD(on) Turn-On DelayTime 4.7 ns
tr Turn-On Rise Time VGS=10V, VDS=30V, RL=6.7Ω, 2.3 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 15.7 ns
tf Turn-Off Fall Time 1.9 ns
trr Body Diode Reverse Recovery Time IF=4.5A, dI/dt=100A/µs 27.5 35 ns
Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs 32 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev8: May 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4828

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20 15
10.0
V 5.0V VDS=5V
15
10
4.5V
ID (A)

125°C

ID(A)
10

4.0V
5
5
25°C

VGS=3.5V
0
0
0 1 2 3 4 5
2 2.5 3 3.5 4 4.5 5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics

100 2
90 VGS=10V
Normalized On-Resistance

1.8
80 ID=4.5A
VGS=4.5V 1.6
RDS(ON) (mΩ )

70
VGS=4.5V
60 1.4 ID=3.0A
50
1.2
40 VGS=10V

30 1

20 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

160 1.0E+01

ID=4.5A
140 1.0E+00

120 1.0E-01 125°C

RDS(ON) (mΩ )

IS (A)

100 125°C 1.0E-02

80 1.0E-03 25°C

25°C
60 1.0E-04

40 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4828

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 800
VDS=30V
ID= 4.5A
8
600

Capacitance (pF)
Ciss
VGS (Volts)

6
400
4
Coss
200
2
Crss

0 0
0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
40
RDS(ON) TJ(Max)=150°C
limited TA=25°C
100µs 10µs
30
10.0
Power (W)
ID (Amps)

10ms 1ms
20
1s
1.0
10s 0.1s
TJ(Max)=150°C 10
TA=25°C DC

0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

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