About SHJ Solar Cell The Most Potential & Competitive Solar Cell }> Japon Sanyo firstly disclosed a new solar cell structure named HIT Heterojunction with Intrinsic Thinlayer| in 1990. pn heterojunction is formed by passivating crystalline sificon cell surface with intrinsic a-Si:H and doped a-Si:H thin fim bilayers. The structure avoids Girect contact between metal electrode and silicon surface. itis a typical passivated contact solar cell with full reo passivated, D in-2014, Sanyo combined technical advantages of HIT and IBC Unterdigitated back contact coll features, achieving solar cal efciency upto 25.6%. In 2017, Kanaka improved the efficiency of HBC (Interdigjtoted heterojunction back contoct cell 0 26.7%, which is now the highest efficiency record of cxystaline cll, Metal Electrode 00 SiH N yer Si layer silicon See SH Hager 21H Player Silicon Heterojunction solar cal (shor! for “HIT” or “SHJ") combines technical advantages of crystalline silicon cells and amorphous silicon cells. SH solar cell has low temperature coefficient, excellent weak-light response, high bi~facial power gain and no UD. It can also made by supper-thinner silicon water. These features enable it the most potential and compettive crystal solar cell Sunpower tem meee on Cel oteos ot ze ace ai2me | aasaee Power Temp. ceficient CFO) “a35_| 027 Bacal Rate 0 wasn Weaiignt Response ‘ade —|— Wan 0 ° a ‘STC: 25,1000 Wind, ANTS ee a meet peccrmace pea opetigtampectines =| a Ess E ass as o »p © © 8 ww Tongue) a Efficiency data in the scat terplot is the normalized value related to room ‘standard efficiency. The red solid line is the benchmark. It cleorly shows SHJ panels perform better than PERC Panel Data resource: CEA-INES wae Bey Hama Saunas, The left diagram shows PERC and SHJ panels with the same rated power of 295W, when tested under the ‘on-site operating lempera— ture (> 40°C), SHJ panel achieves 5% power gain, Dota resource: CEA-INES or ac wt Pa 03/04Sie -yde)( Mim eels} Medal Flex-SHJ.80 | Flex-SHJ-150 | Flex-SHJ-320 Maximum Power, PmaxtW) 80 150 320 ‘Maximum Power Voltage, Vmp(V) 18.38 a 36.78 ‘Maximum Power Current, Imp(A) 435 370 370 Open-creit Voltage, Voo(V) 22.08 2058 4400 Short-crcuit Curent, f(A) 465 0.30 2.30 Power Tolerance (W) os Working Temperature (°C) 40085 Current Temp Coaffcient (16°C) 0.04 Voltage Temp Coefficient (26) 026 Power Temp Coefcient (°C) 027 Max. System Veltage (V) 1000v OC IEC ‘Series Fuse Rating (A) 20 ‘STC 25 Calla ve oan oe ae > a | natn 7 fo fe ibles PV cable 4.0mm?, (+)450 / (-}450 mm cama a Ee ons ent eens IEC 61730_under testing