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Analytical Tem Characterization of Sourcedrain Contacts in Advanced Semiconductor Devices
Analytical Tem Characterization of Sourcedrain Contacts in Advanced Semiconductor Devices
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https://doi.org/10.1017/S1431927618000533
Microsc. Microanal. 24 (Suppl 1), 2018 9
FinFET device using Co as the fill material. The low-angle annular dark field imaging condition is used
to reveal more details of the grain strucutres, as shown in Fig.4(b). In addition, the texture or orientation
mapping and grain size of the Co contacts will be analyzed by precession electron diffraction (PED)
technique since they easily correlate with the eletrcial properties, such as resisitivity.
In summary, comprehensive analytical (S)TEM characterization techniques, including HRSTEM,
EDX/EELS spectrum imaging, EDX tomography, precession electron diffraction (PED) are used to
study the materials and structures of the middle of line metal contacts in advanced semiconductor
devices [7].
References:
[1] H. Niimi et al, IEEE Electron Device Letters (2016), p. 1371.
[2] O. Gluschenkov et al, IEEE IEDM Technical Digest (2016), p. 448.
[3] V. Kamineni et al, IEEE IITC/AMC (2016), p. 105.
[4] R. Xie et al, IEEE IEDM Technical Digest (2016), p. 47.
[5] S. Narasimha et al, IEEE IEDM Technical Digest (2017), p. 689.
[6] C. Auth et al, IEEE IEDM Technical Digest (2017), p. 673.
[7] This work was performed by the Research Alliance teams at various IBM Research and
Development Facilities.
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https://doi.org/10.1017/S1431927618000533