DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5508
NPN SILICON RF TRANSISTOR
FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

FEATURES
• Ideal for low-noise, high-gain amplification applications
• NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
• Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
• fT = 25 GHz technology adopted
• Flat-lead 4-pin thin-type super minimold (M04) package

ORDERING INFORMATION

Part Number Quantity Supplying Form

2SC5508 50 pcs (Non reel) • 8 mm wide embossed taping

2SC5508-T2 3 kpcs/reel • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter Symbol Ratings Unit

Collector to Base Voltage VCBO 15 V

Collector to Emitter Voltage VCEO 3.3 V

Emitter to Base Voltage VEBO 1.5 V

Collector Current IC 35 mA
Note
Total Power Dissipation Ptot 115 mW

Junction Temperature Tj 150 °C

Storage Temperature Tstg –65 to +150 °C

Note Free air

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.

Document No. PU10521EJ01V0DS (1st edition) The mark  shows major revised points.
(Previous No. P13865EJ1V0DS00)
Date Published September 2004 CP(K) © NEC Compound Semiconductor Devices, Ltd. 1999, 2004
Printed in Japan
 2SC5508

THERMAL RESISTANCE

Parameter Symbol Ratings Unit

Junction to Case Resistance Rth j-c 150 °C/W

Junction to Ambient Resistance Rth j-a 650 °C/W

ELECTRICAL CHARACTERISTICS (TA = +25 °C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

DC Characteristics

Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA – – 200 nA

Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA – – 200 nA

Note 1
DC Current Gain hFE VCE = 2 V, IC = 5 mA 50 70 100 –

RF Characteristics

Gain Bandwidth Product fT VCE = 3 V, IC = 30 mA, f = 2 GHz 20 25 – GHz

|S21e|
2
Insertion Power Gain VCE = 2 V, IC = 20 mA, f = 2 GHz 14 17 – dB

Noise Figure NF VCE = 2 V, IC = 5 mA, f = 2 GHz, – 1.1 1.5 dB

ZS = Zopt
Note 2
Reverse Transfer Capacitance Cre VCB = 2 V, IE = 0 mA, f = 1 MHz – 0.18 0.24 pF
Note 3
Maximum Available Power Gain MAG VCE = 2 V, IC = 20 mA, f = 2 GHz – 19 – dB
Note 4
Maximum Stable Power Gain MSG VCE = 2 V, IC = 20 mA, f = 2 GHz – 20 – dB
Note 5
Gain 1 dB Compression Output Power PO (1 dB) VCE = 2 V, IC = 20 mA , f = 2 GHz – 11 – dBm
Note 5
3rd Order Intermodulation Distortion OIP3 VCE = 2 V, IC = 20 mA , f = 2 GHz – 22 – dBm
Output Intercept Point

Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded
S21
3. MAG = (K – √ (K2 – 1) )
S12
S21
4. MSG =
S12
5. Collector current when PO (1 dB) is output

hFE CLASSIFICATION

Rank FB

Marking T79

hFE Value 50 to 100

2 Data Sheet PU10521EJ01V0DS

 2SC5508

TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)

Thermal/DC Characteristics
TOTAL POWER DISSIPATION vs. AMBIENT COLLECTOR CURRENT vs.
TEMPERATURE, CASE TEMPERATURE BASE TO EMITTER VOLTAGE
250 50
Ptot-TA: Free air VCE = 2 V
Total Power Dissipation Ptot (mW)

Ptot-TA: Mounted on ceramic board

200 (15 mm × 15 mm, t = 0.6 mm) 40

Collector Current IC (mA)

Ptot-TC: When case temperature
is specified
150 30

100 20

50 10

0
0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient Temperature TA (˚C), Case Temperature TC (˚C) Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs. DC CURRENT GAIN vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT
50 200
VCE = 2 V
100
Collector Current IC (mA)

40
DC Current Gain hFE

500 µ A
30 450 µ A
400 µ A
350 µ A
300 µ A 10
20 250 µ A
200 µ A
150 µ A
10
100 µ A
IB = 50 µA
0 1
0 1 2 3 4 5 0.001 0.01 0.1 1 10 100
Collector to Emitter Voltage VCE (V) Collector Current IC (mA)

Capacitance/fT Characteristics
REVERSE TRANSFER CAPACITANCE GAIN BANDWIDTH PRODUCT
vs. COLLECTOR TO BASE VOLTAGE vs. COLLECTOR CURRENT
0.50 30
Reverse Transfer Capacitance Cre (pF)

VCE = 3 V
f = 1 MHz
Gain Bandwidth Product fT (GHz)

f = 2 GHz
25
0.40

20
0.30
15
0.20
10

0.10
5

0 0
0 1.0 2.0 3.0 4.0 5.0 1 10 100
Collector to Base Voltage VCB (V) Collector Current IC (mA)

Remark The graphs indicate nominal characteristics.

Data Sheet PU10521EJ01V0DS 3

 2SC5508

Gain Characteristics
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
Maximum Available Power Gain MAG (dB)

VCE = 2 V
Maximum Stable Power Gain MSG (dB)

35
IC = 20 mA
MSG
30
Insertion Power Gain |S21e|2 (dB)

25
MAG
|S21e|2
20

15

10

0
0.1 1.0 10.0
Frequency f (GHz)

INSERTION POWER GAIN, MSG INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT vs. COLLECTOR CURRENT
30 30
Maximum Available Power Gain MAG (dB)

f = 1 GHz f = 2 GHz
Maximum Stable Power Gain MSG (dB)

Maximum Stable Power Gain MSG (dB)

VCE = 2 V VCE = 2 V
25 25
MSG
MAG
Insertion Power Gain |S21e|2 (dB)

Insertion Power Gain |S21e|2 (dB)

20 20 MSG
|S21e|2

15 15 |S21e|2

10 10

5 5

0 0
1 10 100 1 10 100
Collector Current IC (mA) Collector Current IC (mA)

Output Characteristics

OUTPUT POWER, COLLECTOR OUTPUT POWER, COLLECTOR

CURRENT vs. INPUT POWER CURRENT vs. INPUT POWER
20 125 20 125
f = 1 GHz f = 2 GHz
VCE = 2 V VCE = 2 V
Pout
15 100 15 100
Collector Current IC (mA)

Collector Current IC (mA)

Output Power Pout (dBm)

Output Power Pout (dBm)

Pout

10 75 10 75

5 50 5 50
IC IC
0 25 0 25

–5 0 –5 0
–20 –15 –10 –5 0 5 –20 –15 –10 –5 0 5
Input Power Pin (dBm) Input Power Pin (dBm)

Remark The graphs indicate nominal characteristics.

4 Data Sheet PU10521EJ01V0DS

 2SC5508

Noise Characteristics

NOISE FIGURE, ASSOCIATED GAIN NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT vs. COLLECTOR CURRENT
6 30 6 30
f = 1.0 GHz f = 1.5 GHz
VCE = 2 V VCE = 2 V
5 25 5 25

Associated Gain Ga (dB)

Associated Gain Ga (dB)

Ga
Noise Figure NF (dB)

Noise Figure NF (dB)

Ga
4 20 4 20

3 15 3 15

2 10 2 NF 10
NF

1 5 1 5

0 0 0 0
1 10 100 1 10 100
Collector Current IC (mA) Collector Current IC (mA)

NOISE FIGURE, ASSOCIATED GAIN NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT vs. COLLECTOR CURRENT
6 30 6 30
f = 2.0 GHz f = 2.5 GHz
VCE = 2 V VCE = 2 V
5 25 5 25
Associated Gain Ga (dB)

Associated Gain Ga (dB)

Noise Figure NF (dB)

Noise Figure NF (dB)

4 20 4 20
Ga
Ga
3 15 3 15

2 NF 10 2 NF 10

1 5 1 5

0 0 0 0
1 10 100 1 10 100
Collector Current IC (mA) Collector Current IC (mA)

Remark The graphs indicate nominal characteristics.

S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/

Data Sheet PU10521EJ01V0DS 5

 2SC5508

EQUAL NF CIRCLE

VCE = 2 V VCE = 2 V
IC = 5 mA IC = 5 mA
f = 1 GHz f = 2 GHz

Unstable area

Unstable area NFmin = 1.0 dB NFmin = 1.1 dB

Γopt Γopt

1.5 dB 1.5 dB
2.0 2.0
dB dB
3.0 2.5 dB 3.0 2.5 dB
dB dB
4.0 d3.5 dB 3.5
B 4.0 dBdB

6 Data Sheet PU10521EJ01V0DS

 2SC5508

NOISE PARAMETERS

VCE = 2 V, IC = 3 mA
f NFmin Ga Γopt
Rn/50
(GHz) (dB) (dB)
MAG. ANG.

0.8 0.78 21.4 0.26 31.7 0.17

0.9 0.80 20.7 0.26 32.7 0.17
1.0 0.82 20.0 0.26 34.7 0.17
1.5 0.93 17.0 0.23 57.0 0.16
1.8 1.00 15.6 0.20 78.0 0.14
1.9 1.02 15.2 0.19 86.0 0.14
2.0 1.04 14.8 0.19 94.2 0.13
2.5 1.15 13.5 0.20 138.3 0.10

VCE = 2 V, IC = 5 mA
f NFmin Ga Γopt
Rn/50
(GHz) (dB) (dB)
MAG. ANG.

0.8 0.93 22.5 0.12 28.1 0.15

0.9 0.94 21.8 0.12 28.8 0.15
1.0 0.96 21.1 0.12 31.7 0.15
1.5 1.03 18.1 0.09 71.1 0.14
1.8 1.07 16.7 0.08 106.2 0.13
1.9 1.09 16.3 0.08 118.5 0.13
2.0 1.10 15.9 0.08 130.5 0.12
2.5 1.17 14.3 0.14 –179.7 0.11

VCE = 2 V, IC = 10 mA
f NFmin Ga Γopt
Rn/50
(GHz) (dB) (dB)
MAG. ANG.

0.8 1.28 23.7 0.07 –159.4 0.13

0.9 1.29 23.0 0.07 –157.5 0.13
1.0 1.30 22.3 0.08 –155.7 0.13
1.5 1.37 19.3 0.13 –149.2 0.13
1.8 1.41 17.8 0.16 –146.1 0.13
1.9 1.43 17.3 0.17 –145.0 0.13
2.0 1.44 16.9 0.19 –143.9 0.13
2.5 1.51 15.3 0.25 –136.7 0.13

VCE = 2 V, IC = 20 mA
f NFmin Ga Γopt
Rn/50
(GHz) (dB) (dB)
MAG. ANG.

0.8 1.59 24.5 0.26 –158.1 0.12

0.9 1.61 23.7 0.26 –155.5 0.13
1.0 1.63 23.0 0.27 –153.1 0.13
1.5 1.72 19.9 0.30 –142.6 0.14
1.8 1.78 18.3 0.33 –137.3 0.15
1.9 1.79 17.9 0.34 –135.7 0.06
2.0 1.81 17.5 0.35 –134.1 0.16
2.5 1.90 15.8 0.40 –126.5 0.18

Data Sheet PU10521EJ01V0DS 7

 2SC5508

PACKAGE DIMENSIONS

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm)

2.05±0.1
–0.05
0.40+0.1

–0.05
1.25±0.1

0.30+0.1
2

0.65
0.60

T79
2.0±0.1

1.30
1.25

0.65

0.65
1

–0.05
0.30+0.1
–0.05
0.30+0.1

–0.05
0.11+0.1
0.59±0.05

PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base

8 Data Sheet PU10521EJ01V0DS

 2SC5508

• The information in this document is current as of September, 2004. The information is subject to
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products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
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M8E 00. 4 - 0110

Data Sheet PU10521EJ01V0DS 9

 2SC5508

For further information, please contact

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