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N−Channel D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
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circuits.

Typical Applications 23 AMPERES, 25 VOLTS

• Planar HD3e Process for Fast Switching Performance
RDS(on) = 32 mW (Typ)
• Low RDS(on) to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss N−CHANNEL
• Low Gate Charge D
• Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters

MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) G

Parameter Symbol Value Unit

S
Drain−to−Source Voltage VDSS 25 Vdc
Gate−to−Source Voltage − Continuous VGS ±20 Vdc
Drain Current A 4
− Continuous @ TA = 25°C, Limited by Chip ID 23
− Continuous @ TA = 25°C, Limited by Package ID 6.0 1 2
− Single Pulse (tp = 10 s) IDM 60
3
Total Power Dissipation @ TA = 25°C PD 37.5 W
D2PAK
Operating and Storage Temperature Range TJ, Tstg −55 to °C CASE 418B
150 Style 2

Thermal Resistance − Junction−to−Case RJC 3.3 °C/W

Maximum Lead Temperature for Soldering TL 260 °C MARKING DIAGRAM
Purposes, 1/8″ from case for 10 seconds & PIN ASSIGNMENTS
4 Drain

T23
N03
YWW

1 3
Gate 2 Source
Drain

T23N03 = Specific Device Code

Y = Year
WW = Work Week

ORDERING INFORMATION
Device Package Shipping
NTB23N03R D2PAK 50 Units/Rail
NTB23N03RT4 D2PAK 800/Tape & Reel

 Semiconductor Components Industries, LLC, 2003 284 Publication Order Number:

October, 2003 − Rev. 1 NTB23N03R/D
 NTB23N03R

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4) V(br)DSS Vdc
(VGS = 0 Vdc, ID = 250 Adc) 25 28 −
Temperature Coefficient (Positive) − − − mV/°C
Zero Gate Voltage Drain Current IDSS Adc
(VDS = 20 Vdc, VGS = 0 Vdc) − − 1.0
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C) − − 10
Gate−Body Leakage Current IGSS − − ±100 nAdc
(VGS = ±20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4) VGS(th) Vdc
(VDS = VGS, ID = 250 Adc) 1.0 1.8 2.0
Threshold Temperature Coefficient (Negative) − − − mV/°C
Static Drain−to−Source On−Resistance (Note 4) RDS(on) m

(VGS = 4.5 Vdc, ID = 6 Adc) − 50.3 60
(VGS = 10 Vdc, ID = 6 Adc) − 32.3 45
Forward Transconductance (Note 4) gFS Mhos
(VDS = 10 Vdc, ID = 6 Adc) − 14 −

DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 225 − pF
Output Capacitance ((VDS = 20 Vdc,, VGS = 0 V,, f = 1 MHz)) Coss − 108 −
Transfer Capacitance Crss − 48 −
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time td(on) − 2.0 − ns
Rise Time (VGS = 10 Vdc, VDD = 10 Vdc, tr − 14.9 −
Turn−Off Delay Time ID = 6 Adc, RG = 3
) td(off) − 9.9 −
Fall Time tf − 2.0 −
Gate Charge QT − 3.76 − nC
(VGS = 4.5 Vdc, ID = 6 Adc, Q1 − 1.7 −
VDS = 10 Vdc) (Note 4)
Q2 − 1.6 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage VSD Vdc
(IS = 6 Adc, VGS = 0 Vdc) (Note 4)
− 0.87
0 87 1.2
1 2
(IS = 6 Adc, VGS = 0 Vdc, TJ = 125°C)
− 0.74 −
Reverse Recovery Time trr − 8.7 − ns

(IS = 6 Adc, VGS = 0 Vdc, ta − 5.2 −

dIS/dt = 100 A/s) (Note 4) tb − 3.5 −
Reverse Recovery Stored Charge QRR − 0.003 − C
4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.

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285
 NTB23N03R

20 20
4.5 V
10 V VDS ≥ 10 V
8V 4V
ID, DRAIN CURRENT (AMPS)

ID, DRAIN CURRENT (AMPS)

16 6V 16

5V
12 3.5 V 12

8 8
TJ = 25°C
3V

4 4
TJ = 125°C TJ = −55°C
VGS = 2.5 V
0 0
0 2 4 6 8 10 0 1 2 3 4 5 6
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAIN−TO−SOURCE RESISTANCE (
)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (
)

0.20 0.20
VGS = 10 V VGS = 4.5 V
0.16 0.16

0.12 0.12

TJ = 125°C
0.08 0.08
TJ = 25°C
TJ = 125°C
0.04 TJ = 25°C 0.04
TJ = −55°C
TJ = −55°C
0 0
0 4 8 12 16 20 0 4 8 12 16 20
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current
and Temperature and Temperature
RDS(on), DRAIN−TO−SOURCE RESISTANCE

1.8 10,000
VGS = 0 V
ID = 6 A
1.6 VGS = 10 V
IDSS, LEAKAGE (nA)

1.4 1000
(NORMALIZED)

TJ = 150°C

1.2

TJ = 125°C
1 100

0.8

0.6 10
−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current

Temperature versus Voltage

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 NTB23N03R

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

400 8
VDS = 0 V VGS = 0 V TJ = 25°C
Ciss
VGS
C, CAPACITANCE (pF)

300 6

Crss QT
Ciss

200 4
Q1 Q2
Coss
100 2
Crss ID = 6 A
TJ = 25°C
0 0
10 5 VGS 0 VDS 5 10 15 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE Qg, TOTAL GATE CHARGE (nC)
(VOLTS)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge

100 10
VDS = 10 V IS, SOURCE CURRENT (AMPS) VGS = 0 V
ID = 6 A
VGS = 10 V 8
t, TIME (ns)

tr 6
10 td(off)
4
TJ = 150°C
td(on) 2
tf TJ = 25°C
1 0
1 10 100 0 0.2 0.4 0.6 0.8 1.0
RG, GATE RESISTANCE (
) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage versus
versus Gate Resistance Current

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287