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Ste140nf20d Datasheet
Ste140nf20d Datasheet
Ste140nf20d Datasheet
Features
Type VDSS RDS(on) max ID
STE140NF20D 200 V < 0.012 Ω 140 A
Application ISOTOP
Switching applications
Description
This Power MOSFET is produced using Figure 1. Internal schematic diagram
STMicroelectronics’ unique STripFETTM process,
which is specifically designed to minimize input
capacitance and gate charge. The device offers
extremely fast switching performance thanks to
the intrinsic fast body diode, making the device
ideal for hard switching topologies.
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
1 Electrical ratings
2 Electrical characteristics
Drain-source breakdown
V(BR)DSS ID = 1 mA, VGS= 0 200 V
voltage
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Input capacitance
Ciss 11100 pF
Output capacitance VDS = 25 V, f=1 MHz,
Coss - 2190 - pF
Reverse transfer VGS=0
Crss 334 pF
capacitance
Equivalent capacitance time
Co(tr) (1) - 1525 - pF
related
VDS = 0 to 160 V, VGS = 0,
Equivalent capacitance
Co(er) (2) - 1139 - pF
energy related
Rg Intrinsic gate resistance f = 1 MHz open drain - 1.4 - Ω
Qg Total gate charge VDD = 160 V, ID = 140 A, 338 nC
Qgs Gate-source charge VGS= 10 V - 47 - nC
Qgd Gate-drain charge (see Figure 16) 183 nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
S
ON
AX S A
3
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BY N
D N I
ITE IO
MS
M AT
,I PER
/
MS
6$36
6
6
6$36 6'36
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#ISS
#OSS
#RSS
6$36 6$36
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature temperature
!-V !-V
6'3TH 2$3ON
NORM NORM
4* #
4* #
Figure 12. Source-drain diode forward Figure 13. Normalized BVDSS vs temperature
characteristics
!-V !-V
63$ "6$33
6 4*
# NORM
4* #
)3$!
4* #
4* #
3 Test circuits
Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit
resistive load
VDD
12V 47kΩ
1kΩ
100nF
RL 2200 3.3
µF µF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. µF 2.7kΩ VG
PW
47kΩ
PW 1kΩ
AM01468v1 AM01469v1
Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test
switching and diode recovery times circuit
L
A A A
D
FAST L=100µH VD
G D.U.T. DIODE 2200 3.3
µF µF VDD
S B 3.3 1000
B B µF µF
25 Ω VDD ID
D
RG S
Vi D.U.T.
Pw
AM01470v1 AM01471v1
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
90% 90%
IDM
10%
ID 10% VDS
0
A 11.80 12.20
A1 8.90 9.10
B 7.80 8.20
C 0.75 0.85
C2 1.95 2.05
D 37.80 38.20
D1 31.50 31.70
E 25.15 25.50
E1 23.85 24.15
E2 24.80
G 14.90 15.10
G1 12.60 12.80
G2 3.50 4.30
F 4.10 4.30
F1 4.60 5
φP 4 4.30
P1 4 4.40
S 30.10 30.30
0041565_Rev_G
5 Revision history
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