PRESENTATION

ON

Scaling Of MOS

Submitted by :
Raviraj Kour
 Contents
Moore’s Law
Why Scaling?
Types of Scaling
Short channel Effects
Narrow Width Effects
Queries

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 Moore’s Law[1]
 No. of transistors on a chip doubled every 18 to 24 months.
Semiconductor technology will double its effectiveness every 18 months.

Fig. 1 : No. of transistors with years

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 Fig. 2 : End of Moore’s Law
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 Fig. 3 : Technology Evolution (1997 data)

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 Why Scaling?[2]

 Design of high density chips in MOS VLSI technology requires:

 High packing density of MOSFETS
 Small transistor size

 This reduction of size is k/a Scaling.

 S>1 has been introduced leading to reduction of area by a factor S².

Disadvantage : Electric fields within the Gate Oxide grow larger.

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 Statistics[3]

Fig. 4 : Data showing no. of transistors on processors of Intel Corporation

with Years

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 Let’s Start

Fig. 5 : MOSFET Scaling by a factor S

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 Types of Scaling
1. Constant field scaling or full scaling :
 Magnitude of internal electric fields is kept constant.
 Only lateral dimensions are changed.
 Threshold voltage is also effected.

Fig. 6: Full – Scaling of MOSFET

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 Consequences of Constant Field Scaling :

Fig. 7 : Change in parameters due to full scaling

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 Most significant reduction :
Power dissipation is reduced by a factor of S² as P´= P/S²

 Power density remains unchanged.

 Gate oxide capacitance is scaled down as Cg´ = Cg/S

 Overall performance improvement.

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 2. Constant Voltage Scaling :
 More preferred.
 All dimensions are scaled down except power supply and terminal voltages.

Fig. 8 : Parameters effected due to Constant Voltage Scaling

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 Cons of Constant Voltage Scaling :
 Increase in drain current density and power density by a factor of
S³ adversely effecting device reliability.

 Causes problems like :

 Electro Migration
 Hot Carrier Degradation
 Gate Oxide Breakdown
 Electrical Over-stress

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 Short Channel Effects [4]

 When channel length Leff approx. equals source and junction depth xj.

 Why Short Channel MOS , even if it has degraded performance ?

 Threshold voltage is less. Why ?

Effects :
 Drain- Induced Barrier Lowering
 Surface Scattering
 Velocity Saturation
 Impact Ionization
 Hot Carrier Effect
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 Fig. 9: Simplified geometry of MOSFET channel region

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 A. Drain- Induced Barrier Lowering (DIBL)[5]
 Potential barrier is controlled by both VGS and VDS.

 If drain voltage increases , barrier in the channel decreases , leading to DIBL.

 Allows electron flow between S and D even at VGS < VTO .

Fig. 10 : As channel length decreases, the barrier φB to be surmounted by an electron,

from the source on its way to the drain reduces.

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 B. Surface Scattering
 Due to SCE , electric field increases and mobility becomes field dependent.
 Surface scattering occurs.
Average surface mobility decreases.

Fig. 11: Pictorial representation of Surface Scattering[6]

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 C. Velocity Saturation
 Velocity of charge carries Vs Electric Field.

 Three regions.

 Reduces current in Short Channel MOSFET.

 Formula :

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 Fig. 14 : Drift Velocity Vs Electric Field

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 D. Impact Ionisation[7]
 Due to high electric field which causes high velocity of electrons.
 Generates Electron - Hole pairs.

Fig. 15 : Impact Ionization

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 E. Hot Carrier Effects
 When electrons or holes gain sufficiently large energies to
overcome barrier and get trapped in oxide layer.
 Permanently changes MOSFET switching characteristics.
 Adversely effects reliability.

Fig. 16 : Hot Electron Currents

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 Narrow Channel Effects [8]

 MOS having channel widths (W) approx. equals depletion region

thickness (xdm) is known as Narrow – Channel MOS.

 Here , Vto (narrow channel) = Vto + ΔVto (most significant)

 Overlapping of Gate Oxide and FOX.

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 Fig. 17 : Cross – sectional view of a narrow channel MOSFET

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 References
[1] lect15-scaling.ppt
[2] Cmos Digital Integrated Circuits - Sung-Mo Kang and Yusuf Leblebici.pdf , pg. no. 115 ,
TATA MCGRAW – HILL EDITION
[3] www.intel.com/research/silicon/mooreslaw.htm
[4] Cmos Digital Integrated Circuits - Sung-Mo Kang and Yusuf Leblebici.pdf , pg. no. 119 ,
TATA MCGRAW – HILL EDITION
[5] Cmos Digital Integrated Circuits - Sung-Mo Kang and Yusuf Leblebici.pdf , pg. no. 127 ,
TATA MCGRAW – HILL EDITION
[6] EE327 Lec 30a - Surface scattering
[7] Introduction to VLSI design (EECS 467) Project Short-Channel Effects in MOSFETs
December 11th, 2000 Fabio D’Agostino Daniele Quercia pdf , pg. no. 3.
[8] Cmos Digital Integrated Circuits - Sung-Mo Kang and Yusuf Leblebici.pdf , page no. 125 ,
TATA MCGRAW – HILL EDITION

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