2021055/2021037

II BE Examination Dec 2021

Electronics & Telecommunication /
Electronics & Instrumentation
EIR3G1/ETR3G1 Electronic Device And Fabrication
Time 3 Hours Max. Marks: 60

Note: Attempt any two parts of each Question.

Q.1 a) For the Boltzmann approximation to be valid for a semiconductor, the Fermi level 06
must be at least 3kT below the donor level in an n-type material and at least 3kT
above the acceptor level in a p-type material. If T = 300 K, determine the maximum
electron concentration in an n-type semiconductor and the maximum hole
concentration in a p-type semiconductor for the Boltzmann approximation to be
valid in (a) silicon and (b) gallium arsenide.
b) If the density of states function in the conduction band of a particular 06
semiconductor is a constant equal to K, derive the expression for the thermal-
equilibrium concentration of electrons in the conduction band, assuming Fermi-
Dirac statistics and assuming the Boltzmann approximation is valid. Also drive
equation if if the density of states function is given by g,(E) = C 1, (E – Ec) for E> Ec,
where C1 is aconstant.
c) The electron and hole concentrations as a function of energy in the conduction band 06
and valence band peak at a particular energy as shown in Figure. Consider silicon
and assume E-Ef = 20 meV Determine the energy, relative to the band edges, at
which the concentrations peak.

Q.2 a) A particular intrinsic semiconductor has a resistivity of 50 Ω-cm at T = 300 K and 5 06

Ω-cm at T = 330 K. Neglecting the change in mobility with temperature, determine
the band gap energy of the semiconductor.
b) In GaAs. the donor impurity concentration varies as N do exp (-x/L) for 0≤ x≤ L, 06
where L = 0.1 µm and Nd0 = 5 x 10-16 cm-3. Assume µn = 6000 cm2/V-s and T =
300 K. (a) Derive the expression for the electron diffusion current density versus
distance over the given range of x. (b) Determine the induced electric field that
generates a drift current density that compensates the diffusion current density.
 c) In a p-type silicon semiconductor, excess carriers are being generated at the end 06
of the semiconductor bar at x = 0 as shown in Figure. The doping concentration is
Na = 5 x 1016 cm-3 and Nd = 0. The steady-state excess-carrier concentration at x =
0 is 1015 cm-3. (Neglect surface effects.) The applied electric field is zero. Assume
that life time of electron and hole is 8 x 10 -7 s. (a) Calculate δn, and the electron
and hole diffusion current densities at x = 0. (b) Repeat part (a) for .x = L.

Q.3 a) Consider two p-n silicon junctions at T = 300 K reverse biased at V R = 5 V. The 06
18 -3 15 -3
impurity doping concentrations in junction A are Na = 10 cm and Nd = 10 cm
and those in junction B are Na = 1018 cm-3 and Nd = 1016 cm-3. Calculate the
ratio of the following parameters for junction A to junction B: (a) W. (b) E Max and
(c) Cj.
b) Drive the equation of built in potential barrier under zero biased condition. If an 06
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abrupt PN junction has dopant concentration of Na=2* 10 cm and Nd = 2*10
cm-3 at T=300K calculate Vbi, W at VR=0v and VR=8v. also calculate the electric
field in space charge region at VR=0v and VR=8v.
c) A p+ n silicon diode is fabricated with a narrow n region as shown in Figure, in 06
which Wn < Lp. Assume the boundary condition of p n = pn0 at x=
xn+Wn. (a) Derive the expression for the excess hole concentration pn(x). (b) Using
the results of part (a), show that the current density in the diode is given by

Q.4 a) Drive the equation for max value of reverse bias voltage applies to base- collector 06
junction when pnp bipolar junction transistor operated in common base
configuration.

b) Consider a pnp bipolar transistor. Assume that the excess minority carrier hole 06
concentrations at the edges of the B-E and B-C space charge regions are δp B(0) = 8
x 1014 cm-3 and δpB (XB) = -2.25 x 104 cm-3, respectively. Plot the same graph, δp B
(x) for (a) the ideal case when no recombination occurs in the base, and (b) the case
when XB = LB = 10 µm. assume sinh (XB/LB)=1.1752 (c) Assuming DB = 10 cm2 /s,
calculate the diffusion current density at x = 0 and x = x B for the conditions in parts
(a) and (b) Determine the ratio J(x = xB)/J(x = 0) for the two cases.
c) Drive the equation which shows the relationship between increment in collector 06
current and increment in base emitter voltage.

Q.5 a) (i) Why is Silicon a desirable material for integrated circuit fabrication? Only
using diagrams (with captions) depict main steps in the fabrication of BJTs from a 04
silicon wafer.
(ii) Show in a Zinc blende structure the packing density is only 34%. 02
b) (i) Discuss the significance of tetrahedral radius of the constituting atoms in the doping process? W
is it easier to fabricate an npn transistor than a pnp transistor? 4
(ii) In a crystal structure of Si, determine the atomic density for the plane (111).
2
c) Using suitable block diagrams discuss the fabrication of a silicon wafer from the 6
silica ore.