Professional Documents
Culture Documents
MRF6V4300N
MRF6V4300N
MRF6V4300N
RFin/VGS RFout/VDS
RFin/VGS RFout/VDS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +110 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Storage Temperature Range Tstg -- 65 to +150 °C
Case Operating Temperature TC 150 °C
Operating Junction Temperature (1,2) TJ 225 °C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
On Characteristics
Gate Threshold Voltage VGS(th) 0.9 1.65 2.4 Vdc
(VDS = 10 Vdc, ID = 800 μAdc)
Gate Quiescent Voltage VGS(Q) 1.9 2.7 3.4 Vdc
(VDD = 50 Vdc, ID = 900 mAdc, Measured in Functional Test)
Drain--Source On--Voltage VDS(on) — 0.25 — Vdc
(VGS = 10 Vdc, ID = 2 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance Crss — 2.8 — pF
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance Coss — 105 — pF
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance Ciss — 304 — pF
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W, f = 450 MHz, CW
Power Gain Gps 20 22 24 dB
Drain Efficiency ηD 58 60 — %
Input Return Loss IRL — --16 --9 dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
ATTENTION: The MRF6V4300N and MRF6V4300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
2 Freescale Semiconductor
B3
VSUPPLY
B1 L2 C9 C5 C2
VBIAS
+
C1 C7 C4 C8 R1
L4 C13
RF
C12 L1 OUTPUT
Z7 Z8 Z9 C20 Z10 C21 C22 Z11 C25 C26 Z12 Z13
RF
INPUT C15
Z1 Z2 Z3 Z4 Z5 Z6
C19 C23 C24 C27 C28
C11
C16 C17 C18 DUT
L5
C14
L3
C10 C6 B2 C3
VSUPPLY
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor 3
C1 B1 B3
C7 C2
C4
C8
C9 C5
L2
R1
C12
C13
ATC
C20 C21 C22 C25 C26 C15
L1
C11 L4 L5
C14
L3
MRF6V4300N/NB
Rev. 1
C10 C6
C3
B2
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
4 Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000 100
Ciss
100 Coss
10
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
10 Crss
TC = 25°C
1 1
0 10 20 30 40 50 1 10 100
VDS, DRAIN--SOURCE VOLTAGE (VOLTS) VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage Figure 5. DC Safe Operating Area
10 23
9 VGS = 3 V
8 22
IDQ = 1350 mA
ID, DRAIN CURRENT (AMPS)
0 60
P3dB = 56.06 dBm (403 W) Ideal
--5 VDD = 50 Vdc, f1 = 450 MHz, f2 = 450.1 MHz 59
IMD, THIRD ORDER INTERMODULATION
--15
57 P1dB = 55.15 dBm (327 W)
--20
DISTORTION (dBc)
--25 56
IDQ = 450 mA Actual
--30 55
--35 650 mA 54
--40
900 mA 53
--45
--50 1350 mA 52
VDD = 50 Vdc, IDQ = 900 mA
--55 51
1125 mA f = 450 MHz
--60 50
10 100 600 28 29 30 31 32 33 34 35 36 37 38
Pout, OUTPUT POWER (WATTS) PEP Pin, INPUT POWER (dBm)
Figure 8. Third Order Intermodulation Distortion Figure 9. CW Output Power versus Input Power
versus Output Power
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
23 60
TC = --30_C
22 25_C
55
20 50
19 50 V
45 V 45
40 V
18
35 V VDD = 50 Vdc
30 V IDQ = 900 mA 40 IDQ = 900 mA
17 25 V
f = 450 MHz f = 450 MHz
VDD = 20 V
16 35
0 50 100 150 200 250 300 350 400 15 20 25 30 35 40
Pout, OUTPUT POWER (WATTS) CW Pin, INPUT POWER (dBm)
Figure 10. Power Gain versus Output Power Figure 11. Power Output versus Power Input
25 80 108
23 60
Gps, POWER GAIN (dB)
TC = --30_C
107
Gps
MTTF (HOURS)
22 85_C 50
25_C
--30_C
21 40
85_C 106
20 30
ηD VDD = 50 Vdc
19 IDQ = 900 mA 20
f = 450 MHz
18 10 105
10 100 500 90 110 130 150 170 190 210 230 250
Pout, OUTPUT POWER (WATTS) CW TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Power Gain and Drain Efficiency This above graph displays calculated MTTF in hours when the device
versus CW Output Power is operated at VDD = 50 Vdc, Pout = 300 W, and ηD = 60%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
6 Freescale Semiconductor
Zo = 2 Ω
f = 450 MHz
Zsource
f = 450 MHz
Zload
Z Z
source load
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor 7
PACKAGE DIMENSIONS
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
8 Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor 9
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
10 Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor 11
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
12 Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor 13
PRODUCT DOCUMENTATION AND SOFTWARE
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
2 Mar. 2009 • Corrected Zsource, “0.40 + j5.93” to “0.39 + j1.26” and Zload, “1.42 + j5.5” to “1.27 + j0.96” in Fig. 14, Series
Equivalent Source and Load Impedance data table and replotted data, p. 7
3 Apr. 2010 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 14
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
14 Freescale Semiconductor
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
MRF6V4300NR1 MRF6V4300NBR1
RF Device
Document Data MRF6V4300N
Number:
Rev. 3, 4/2010
Freescale Semiconductor 15