PE Introduction - Chap 1

POWER ELECTRONICS
EE3410E
Dr. NGUYEN KIEN TRUNG

Advance Power Electronic Systems Laboratory
Industrial Automation Dept. , school of Electrical engineering,
Hanoi University of Science and Technology
Time: Jan. 2018
1
Advanced Power Electronic systems lab Hanoi University of Science and Technology
 Objectives:
◦ Achievement of fundamental knowledge about the electric energy
conversion processes using power semiconductor devices as well as the
typical applications of power conversions.
◦ Awareness of technical specs of high power semiconductor devices.
◦ Getting the deeply conceptions of electric energy conversion processes:
(AC – DC),(AC – AC), (DC – DC), (DC – AC) and inverters.
◦ Skills of using some simulation softwares for example: MATLAB, PLEC,…
in order to research and analyse the operation of converters.
◦ After the course, the learners are able to design, calculate the power
electronics converters for simple applications.
 Requirements:
◦ Attendence the lecture and study the reference books and documents,
◦ Using Matlab-Simulink for simulating, confirmation the processes
happening within power converters,
◦ Improving the knowledge by doing the homeworks.
2
10/22/2010 2
 Evaluation:
◦ Mid-term examination: 0,25
◦ Final examination: 0,75
◦ Regular and sudden tests
 Open book examination.
3
 1. Handout
 2. Power electronics handbook- devices, circuits,
and applications, Muhammad H.Rashid
 1. Điện tử công suất; Võ Minh Chính, Phạm Quốc Hải,
Trần Trọng Minh; NXB KH&KT Hà nội, 2009.
 2. Phân tích và giải mạch điện tử công suất; Phạm
Quốc Hải, Dương Văn Nghi; NXB KH&KT, 1999.
 3. Giáo trình điện tử công suất; Trần Trọng Minh;
NXB Giáo dục, 2009.
 4. Hướng dẫn thiết kế Điện tử công suất; Phạm Quốc
Hải; NXB KH&KT 2009.
4
10/22/2010 4
What is Power Electronics ?
How can your phone be charged by 110 V/ 60 Hz ?
High voltage
110 V/ 60 Hz (AC)
Directly Iphone 6s
Battery: 3.7V, 1715 mAh
(DC)
Iphone charger
Input: 100-240V 50/60Hz
Output: DC 5V/ 1A
charger
5
How can people speed up/down the electric car?
AC motor
DC voltage
6
A field of Electrical Engineering that deals with the application of
power semiconductor devices for the control and conversion of
electric power
Input
Source Power Electronics Load
- AC Converters
- DC Output
- uncontrollable - AC
- DC
- Controllable
Reference Controller Feedback
Power electronic converter / Power converter/ converter is a tool to control

electric load
Range of power scale :
milliwatts(mW) megawatts(MW) gigawatts(GW)
7
Application of power electronic
8
It is estimated that in developed countries now 60% of

the electric energy goes through some kind of power
electronics converters before it is finally used.
Power electronics has been making major

contributions to:
--better performance of power supplies and better control of
electric equipment
--energy saving
--environment protection Why? How?
9
Main types of power electronic converters
AC Rectifier (ac/dc) DC
ac/ac dc/dc
converter converter
AC DC
Inverter (dc/ac)
10
AC/DC: rectifier
Power Electronics DC/DC
Converters DC/AC: inverter
AC/AC
Power Semiconductor
devices: diode, thyristor,
Passive components GTO, MOSFET, IGBT,….
The most importance device
11
Power semiconductor devices Power switches
isw
ON or OFF
+ vsw −
=0
isw = 0
Ploss = vsw× isw = 0
+ vsw −
Losses ideally ZERO !
12
Safety operating area
Power loss on
switching device:
+ Conduction loss
+ Switching loss
+ Gate drive loss
13
Soft switching Technique
• Zero voltage switch - ZVS • Zero current switch - ZCS
Advance: ZdVS: Zero dv/dt switching
14
The history
15
15
16
17
18
Relationship of power electronic with other field
Systems & Signal

Control theory processing
Circuit
Simulation &
theory
computing
Electric Power
machines Electronics
electronics
Power Solid state

systems physics
Electromagnetics
19
Research topic of Power electronic
1. Power semiconductor device: develop new devices
2. Power converter: AC/DC; DC/DC; DC/AC; AC/AC
3. Application of power electronic: Motor drive, Heating, Lighting, power supply, power
systems, ……
20
Chapter I
Basic power semiconductor devices
• I.1 Fundamental issues

• I.2 Diode
• I.3 Thyristor
• I.4 Triac
• I.5 GTO (Gate-Turn-off Thyristor)
• I.6 BJT (Bipolar Junction Transistor)
• I.7 MOSFET (Metal-Oxide Semiconductor Field Effect Transistor)
• I.8 IGBT (Insulated Gate Bipolar Transistor)
• Key points:
– Operating principle
– Basic parameters (Technical specs): must be known to choose the right elements for
specific application.
21
10/22/2010 21
Chapter I
I.1 The fundamental issues
• Semiconductor devices work in
on/off state:
– ON: iV > 0, uV = 0;
– OFF: iV = 0, uV > 0;
– Losses: pV = iV*uV ~ 0;
• In general, semiconductor devices
allow current flow in one
direction:
– ? How to create the bidirectional
switch
• From the view point of control,
valves are classified into:
– Non-controllable: DIODE
– Controllable:
• Half-controllable devices:
THYRISTOR, TRIAC,
• Full-controllable: BIPOLAR V-A characteristic of ideal switch:
TRANSISTOR, MOSFET, IGBT, bidirectional current and voltage.
GTO.
22
Chapter I
I.1 The fundamental issues
Switching Power Loss is

proportional to:
• switching frequency
• turn-on and turn-off times
23
• Created from single junction p-n
– Current flows in only one direction
from anot to catot Symbol of diode
– uAK >0 iD >0; Forward polarized.

– uAK < 0 iD = 0; Reverse polarized
Ideal V-A characteristics of diode

24
Chapter I
I.2 DIODE
• V-A curve of diode
– Explanation of practical operation of diode
– Calculation of heat generation (losses) in working period.
Real V-A characteristics of Diode Linearized characteristics:

uD = UD,0 + rD*iD; rD = ΔUD/ΔID
25
Chapter I
I.2 DIODE
• The structure of power diode
– Allow large current (in
range of thousand ampe),
to be able to lock very
high reverse voltage (in
range of thousand volts);
– Because of special
requirement, its structure
is composed from more
than single p-n junction.
A n-type junction (lack n-
) must be added
The lack n- area will increase the reverse voltage

as well as the dropped voltage in forward state.
26
Chapter I Basic power semiconductor devices
I.2 DIODE
• Switching characteristics of Diode
– Dynamic characteristics uD(t),
Recovery charge
iD(t), Qrr
Recovery
time trr
ON state: uFr reaches to some V before OFF state: current falling to 0, continue
coming back the stable value 1 – 1,5V increasing in reverse direction with the rate
because of n- area is lack of charge of dir/dt until Irr then back to 0.
27
I.2 DIODE
• The fundamental parameters • Why the average current?
– Heat generation and cooling issue.
– Average forward current:
– For eg: t T
ID (A) 1 0
iD  t  dt
T t0
ID 
– Maximum reverse voltage,
Ung,max (V)
• Capability of standing for voltage: 3 values
– Operating frequency, f – Repetitive peak reverse voltages, URRM
(Hz) – Non repetitive peak reverse voltages , URSM
– Direct reverse voltages, UR
– Recovery time, trr (μs)
and recovery charge, Qrr • When operating increases, the switching losses
will be the main part.
(C)
• Three main power diode:
• Web-site of Proton-Electrotex – 1. Regular power diode at 50, 60 Hz. The trr will be
– http://www.proton-electrotex.com/ ignored
– 2. Fast diode, ultrafast diode.
• Web-site of PowerRex – 3. Schottky Diode.
– http://www.pwrx.com/
28
I.3 Thyristor
• Structure: 4 layers, p-n-p-n
generating 3 p-n junctions, J1, J2, J3. Symbol of
thyristor
• 3 electrodes:
– Anode,
– Cathode,
– Gate.
• Controlable device. To be able to
lock both forward and reverse
voltage.
• Allow current flow in only one
direction from anode to catode.
– uAK >0 ; Forward polarized.
– uAK < 0 ; Reverse polarized
The ideal V-A characteristic of
thyristor.
29
I.3 Thyristor
n- layers increases
the withstand
voltage of the
device
Thyristor: Semiconductor structure and equivalent circuit
30
I.3 Thyristor
• V-A characteristics of thyristor • 1. Reverse: UAK < 0.
– Similar to Diode.
• 2. Forward: UAK > 0.
• 2.1. When UGK = 0,
– When UAK < Uf,max thyristor blocks the
current.
– Until UAK = Uf,max resistance of thyristor
falls down suddenly. Thyristor goes to
the small resistance like diode at
forward polarization.
• 2.2 When UGK > 0,
– Thyristor goes to the small resistance
like diode at forward polarization UAK
<< Uf,max.
– Changing voltage is smaller when UGK
bigger.
• In all casses, thyristor only allow
current go thought if IV > Ih,
(Holding current).
Ur: reverse voltage
Uf: forward voltage
31
Advanced Power Electronic systems lab 3
I.3 Thyristor: Basic parameters.
• 1. Average current, IV
– Normal cooling: 1/3.IV.
– Forced cooling by fan: 2/3.IV.
– Forced cooling by water: 100% IV.
• 2. Maximum reverse voltage, Ung,max
• 3. Time of recovery blocking of thyristor, trr (μs)
– Minimum time to put negative voltage on the anode-cathode of thyristor after
iV reaches to 0 before the possible positive voltage UAK that thyristor is still
locked.
– In commutated dependent or independent inverters, the blocking time of device
must be (1,5 – 2) x tr.
– classification of thyristor based on trr:
• Low freq.: trr > 50 μs; The smaller trr, more
• Fast freq: trr = 5 – 20 μs expensive thyristor
32
I.3 Thyristor: Basic parameters.
• 4. Maxmimum growth rate of
curent, dI/dt (A/μs)
– Low freq. thyristor: dI/dt ~ 50 –
100 A/μs.
– Hight freq thyristor: dI/dt ~ 200 –
500 A/μs.
• 5. Maxmimum growth rate of
voltage, dU/dt (V/μs)
– Low freq. thyristor: dU/dt ~ 50
– 100 V/μs.
– Hight freq thyristor: dU/dt ~
200 – 500 V/μs.
• 6. Requirements to control
signal, (UGK, IG)
– In addition to amplitude voltage,
current, pulse width is an important
requirement..
– Minimum pulse width to ensure IV ≥ Ih
33
I.3 Thyristor: Typical application.
• Q1:………………………………..;
• IT: ………………………………...
• R3: ………………………………..
• D1, DZ1: ………………………….
• D2: ………………………………..
• R4: ………………………………..
• D3: ……………………………….
• C1: ……………………………….
• R1, R2: selected depending on
amplitude of control pulse. Typical
value: R1=5,6k, R2=2,3k.
34
I.4 Triac, bidirectional power semiconductor device
Equivalent circuit
V-A characteristic of triac
35
I.4 Triac, bidirectional power semiconductor device
uA1A2 > 0 uA1A2 <0
I IG > 0 IG < 0
II IG < 0 IG > 0
Due to the structure, the

sensitivity of triac on the The best
control signals is not the same solution
for the two-directional voltage.
The typical pulse amplification of triac (ignore

the dynamic isolation between power circuit
and control circuit). Opto-coupler can be used to
isolate the control signal.
36
Advanced Power Electronic systems lab Hanoi University of 10/22/2010 3
Science and Technology
I.5 GTO (Gate Turn Off Thyristor).
GTO – Semiconductor Equivalent circuit

structure.
For large power, GTO is made up

of elements in parallel on a single
silicon chip.
Symbol (a) và (b).
37
I.5 Classification of GTO.
Both types of
GTO are used
in voltage
source
inverter (VSI),
GTO are not
subject to
large reverse
voltages.
Short circuit anode type GTO. Reverse diode type GTO
38
I.5 GTO, control signal
IG control current,
with large
amplitude to IGM,
then maintained
throughout the
opening period.
Blocking period:
The negative
control current
reaches to IGQM.
tw turn-on pulse
width, tAV turn-off
pulse width, tGM
delay blocking time
are important
parameters
39
I.5 GTO, amplification control signal
Pulse
amplification
circuit is
complex,
requiring the
large power
(current).
Turn-off pulse
depends on vast
of blocking
parameters (how
does blocking
current reach to
ZERO).
40
I.5 GTO, application and basic parameters
Param. Values Note
Example: Basic
VDRM 4500V Repetitive peak off voltage parameters of GTO
FG1000BV-90DA
IT(AV) 400 A Average current (Mitsubishi) .
Reference:
di/dt max 1000A/ µs Maxmimum growth rate of curent di/dt
www.mitsubishichips.com
ITQRM 1000A Maximum forward current that GTO can /Global/files/manuals/gtot
switch off hyristors.pdf .
FEATURE AND
APPLICATION OF
VRRM 17V Maximum reverse voltage
VTM 4V Max. Maximum forward drop voltage
GATE TURN-OFF
IRRM 100mA Max. Maximum leakage current THYRISTORS. Aug.1998
IDRM 100mA Max. Maximum leakage current in forward
blocking state
tgt 10 µs Max. Delay turn on time
tgq 20 µs Max. Delay turn off time
IGQM 300A Switching off current of control gate
VGT 1,5V Max. Voltage drop on G-K @ IGT max.
IGT 2500mA Max. Gate current in switching on 41

I.5 GTO, application and basic parameters
• Some type of thyristor turned off by gate control signal:

• IGCT (INTEGRATED GATE COMMUTATED THYRISTOR)
• MCT (MOS CONTROLLED THYRISTOR)
• MTO (MOS TURN OFF THYRISTOR)
• ETO (EMITTER TURN-OFF THYRISTOR)
• Applications of GTO are in the range of large power, high voltage, especially in the
power electronics system controls the power system (FACTS) or in the high power
inverter.
• Example: 2000 kW inverter at But Sơn cement manufacture.
42
I.6 BJT (Bipolar Junction Transistor)
• Showing the structure n-p-n.
The power transistors are NPN
because of faster switching
speed.
• The current is the electron

flow, running from E to C.
Potential of C is higher than E.
• In blocking mode uBE <0, so

both BE and BC junction are
reverse polarized.
• In conducting mode uBE> 0, so

both BE and BC junction are
forward polarized, current can
pass through the
semiconductor structure.
43
I.6 BJT Switching characteristics
• 1: uB< 0, blocking mode
• 2: uB=uB2 > 0, B-E junction
becomes forward polarized.
Curent starts flowing through
the device when the UBE = 0.
• 3: time delay when
conducting, iC up to Un/Rt, UCE
decreased nearly to 0.
• 4: charge fills two junctions,
CE structure is regarded as
resistance Ron.
• 5: device is at saturation.
•Equivalent circuit of BJT. • 6: uB < 0, Device is started to
block current. B-E is backward
•The parasitic capacitor CBC, polarized.
CBE effect to switching • 7: iC begins to decline, UCE
process strongly. begins to increase.
• 8: B-E is backward polarized,
•They are so-called current can not flow though,
“parasistic” because of uBE reaches uB1.
unreal, they appear when a
p-n junction is reversed like
diode.
44
I.6 BJT Static characteristics
– Output curve: IC(VCE) with IB=const. Load curve VCE=VCC-IC*R, - PQ line.
– BJT is current controled device. Current amplifying factor bIC/IB;
– In PE applicaton, BJT are used as electronic switch:
• Saturated conducting:IB=kbh*IC/ b, where kbh =1,5 – 2: saturation ratio.
• Blocking: IB=0.
45
I.6 BJT Safety Operating Area (SOA)
• QR: saturation;
• RS: ICmax.
• QP: cut-off line;
• PU: UCEmax; maximum
with-standing voltage
C-E.
• UT: second breakdown
boundary;
• TS: Maximum power.
– P=VCE*IC < Pmax
46
I.6 BJT – Important Features
• BJT is a current controlled element, require relative large power to

control them.
• The “Darlington” connection can overcome this disadvantage.
“Darlington”, however, increases VCE leading to more power loss.
• BJT has small VCE , operating current and voltage up to hundreds A,
1000V.
• BJT are being replaced by IGBT.
47
I.7 MOSFET – Design and operating principle
• Semiconductor structure:
– Source electrode: S;
– Drain electrode: D;
– Control electrode: G;
• S is connected to p, D is
connected to n, so there is no
conducting channel between D
- S.
• G is located in metal oxide
separately.
• When VGS reaches to a specific
value so-called “threshold”, p
elements are rejected, n
elements are attracted, creating
a conducting channel between
Ký hiệu D - S. The device allow current
go through.
48
I.7 MOSFET – Static Characteristic
• Output characteristic ID(UDS) when • Control curve ID(UGS) when UDS=const.

UGS=const, • Threshold voltage Ung~4-5V MOSFET.
• When conducting, MOSFET is regarded • Control voltage inrange 0 – 10V.
as Ron.
•Ron increase when temp. rising. MOSFET
can be connected parallely.
49
I.7 MOSFET –Switching Characteristic
• Equivalent circuit of MOSFET.

• Parasitic CGD, CGS, CDS are determined
during switching phase.
• Parasitic capacitors must be charged
and discharged. The current must be
guaranteed by driver.
ON (a); OFF (b). 50

I.7 MOSFET – General Issues
• MOSFET are more and more important power semiconductor devices:

– The fastest device: 1MHz. (Now, op. freq is about 3MHz)
– Capability of parallel connection in oder to increase the power.
• MOSFET plays an important role in PE applications.
• Although being a voltage controlled device, but the gate current must be taken into
consideration.
51
I.8 IGBT
• IGBT are element that combined the advantages of BJT and MOSFET:
– Like BJT, so IGBT can operating at high voltage, large current conditions.
– Like MOSFET, IGBT can be controlled by small power control, higher switching freq.
• In general, IGBT is one of the biggest invention.
IGBT: symbol and

eqv. circuit
52
I.8 IGBT – Switching characteristics
• equivalent circuit
•Cgc, Cge are parasitic
• switching ON IGBT.
capacitors.
• Switching OFF of IGBT.
• Blocking time ti1, ti2 , i2 is so-
called current tail.
53
I.8 IGBT – Anti saturation circuit
Device is switched off

slowly, limit the di/dt.
54
I.8 IGBT – General Issues
• IGBT combines the advantages of BJT and

MOSFET.
• Switch-off time of IGBT longer than
MOSFET. Especially at switching off period
because of current tail. Control signal of
IGBT: +15V, -5V.
• IGBT needs specific driver.
• Control circuit requires desaturation
protection.
55
- Comparison.
56
Finish Chapter 1
57

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POWER ELECTRONICS

Dr. NGUYEN KIEN TRUNG

Reference Controller Feedback

Power electronic converter / Power converter/ converter is a tool to control

Application of power electronic

It is estimated that in developed countries now 60% of

Power electronics has been making major

Power semiconductor devices Power switches

• Zero voltage switch - ZVS • Zero current switch - ZCS

Advance: ZdVS: Zero dv/dt switching

Systems & Signal

Power Solid state

• I.1 Fundamental issues

Switching Power Loss is

– uAK >0 iD >0; Forward polarized.

Ideal V-A characteristics of diode

Real V-A characteristics of Diode Linearized characteristics:

The lack n- area will increase the reverse voltage

Thyristor: Semiconductor structure and equivalent circuit

Due to the structure, the

The typical pulse amplification of triac (ignore

GTO – Semiconductor Equivalent circuit

For large power, GTO is made up

Short circuit anode type GTO. Reverse diode type GTO

IGT 2500mA Max. Gate current in switching on 41

• Some type of thyristor turned off by gate control signal:

• The current is the electron

• In blocking mode uBE <0, so

• In conducting mode uBE> 0, so

• BJT is a current controlled element, require relative large power to

• Output characteristic ID(UDS) when • Control curve ID(UGS) when UDS=const.

• Equivalent circuit of MOSFET.

ON (a); OFF (b). 50

• MOSFET are more and more important power semiconductor devices:

IGBT: symbol and

Device is switched off

• IGBT combines the advantages of BJT and

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