PVsyst V7.2.

PV module - Mono 440 Wp Twin 144 half-cells

Manufacturer Generic Commercial data
Model Mono 440 Wp Twin 144 half-cells Availability : Prod. Since 2020
Data source : Typical

Pnom STC power (manufacturer) 440 Wp Technology Si-mono

Module size (W x L) 1.052 x 2.115 m² Rough module area (Amodule) 2.22 m²
Number of cells 2 x 72 Sensitive area (cells) (Acells) 1.99 m²

PVsyst TRIAL
Specifications for the model (manufacturer or measurement data)
Reference temperature (TRef)
Open circuit voltage (Voc)
Max. power point voltage (Vmpp)
=> maximum power (Pmpp)

One-diode model parameters

25
49.7
41.1
439.8
°C
V
V
W
Reference irradiance (GRef)
Short-circuit current (Isc)
Max. power point current (Impp)
Isc temperature coefficient (muIsc)
1000
11.10
10.70
6.3
W/m²
A
A
mA/°C

Shunt resistance (Rshunt) 1000 Ω Diode saturation current (IoRef) 0.014 nA

Serie resistance (Rserie) 0.22 Ω Voc temp. coefficient (MuVoc) -159 mV/°C
Specified Pmax temper. coeff. (muPMaxR) -0.37 %/°C Diode quality factor (Gamma) 0.98
Diode factor temper. coeff. (muGamma) -0.001 1/°C

Model results for standard conditions (STC:

PV module: T=25 °C,Mono
Generic, G=1000
440W/m², AM=1.5)
Wp Twin 144 half-cells
Max. power point voltage (Vmpp) 41.6 V Max. power point current (Impp) 10.65 A

PVsyst TRIAL
Maximum power (Pmpp) 14 440.6 Wp Power temper. coefficient (muPmpp) -0.37 %/°C
Efficiency(/ Module area) (Eff_mod)
Cells temp. = 45°C
19.8 % Fill factor (FF) 0.799
Efficiency(/ Cells area) (Eff_cells) 22.2 %
12
Incident Irrad. = 1000 W/m²
408.0 W

10
Incident Irrad. = 800 W/m²
326.6 W

8
Current [A]

Incident Irrad. = 600 W/m²

244.2 W

PVsyst TRIAL
Incident Irrad. = 400 W/m² 161.3 W

Incident Irrad. = 200 W/m² 78.7 W

2

0
0 10 20 30 40 50
Voltage [V]

PVsyst TRIAL
25/08/21 PVsyst Evaluation mode Page 1/1