UNIVERSIDAD INDUSTRIAL DE SANTANDER

Escuela de Ingenierías Eléctrica, Electrónica y de Telecomunicaciones

DISPOSITIVOS ELECTRÓNICOS
SEGUNDO EXAMEN PARCIAL. PROF.: AA, JM & ER.

Tiempo 1 hora 45min

Nombre: Código:

1. [2.0] For Fig. 1 assume D1 as an ideal diode with a constant voltage drop of 0.7V, D2 as a
Zener diode with breakdown voltage 9V, and R1 = R2 = R3 = 10 kOhms. Sketch Vout as a
function of the input voltage Vin. Complete Table 1 with the Vin ranges for which each diode is
forward biased.

Figure 1.

Diode Vin Range

D1

D2

2. [2.0] For circuit in Fig 2. find the maximum resistance Rx so that the transistor Q2 is biased in
active region. Assume Beta = 100, R1 = 33k, R2 = 10k, R3 = 1k and R4 = 6.8k.
 UNIVERSIDAD INDUSTRIAL DE SANTANDER
Escuela de Ingenierías Eléctrica, Electrónica y de Telecomunicaciones

Figure 2.

Rx = ___________

3. [0.5] Due to a manufacturing error, the p side of a pn junction has not been doped. Would the
union perform like a rectifier diode? Why?
 UNIVERSIDAD INDUSTRIAL DE SANTANDER
Escuela de Ingenierías Eléctrica, Electrónica y de Telecomunicaciones
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4. [0.5] Consider a pn junction in forward bias.

(a) What is the value of Is to obtain a current of 1 mA at room temperature (27oC) with a
voltage of 750 mV?

(b) If the diode cross section area is now doubled, what voltage yields a current of 1 mA?