UNIT- HCD

UNN EFFEcT DIODES

oLa As D d e
J . 8. Gunn - i963

- Gunn Eect- A beaiodicgucualions e cuont þa23ung

thaough n yhe Gia As 3peciman when the appliod voltege
ezcooded a certain c utical value.
D L E y - WATKINS HILSUM (RW +H) THEORY

Two valoy ModolL Theoay

Tha undamantol concopl oj RWH Theoy is DYJereriliol
Negative Hesislan.ce. when eilhea a v oltage (oneledirjold,
a cwuant s a}plied to h e termunals o tha Sampla
DeyLcos
Thena are two modos Negalure ResLstanco
Gi) voltage conArolled modo.
Ceaent conta0llo Mode.
Voltage-conAa0lled Mode COnent- contaalled Mede

x I nvt contolled Mode, euent Density canbe Multivalued

* En ct Cenbaclad Moda., veltage. can be Maltivalued

Lowfield High Field

Hugh Cunent

Low c Nt
HLgh fold Demain
ighcuNnent Filament
 Electao
he

J
Jo Jo
J Ja

E E E2.
E Eo E2
vollage-contaolled. Made2 Cusoont cont-aolled. Mode

XIn vollage contolled made, highiold domains caeJeamed,

seboraling heo Jaw iold 0gions. Tte urnloyaas sepesaling
Jaw andhtgh ild domains lue dlong
they a2oin planes 1r to CuLont dioadion
equipolenlials, thus
c u O n l controllad Mode, -spitling the sample aoultsin
high-cunent zilamenii unnirg along theield diaadion.
Tho nogalire 3IOsistan.ce. a 3ample at a-haaHcular Agion
is
dT dI- Negaive Resistanco
dv dE
x VE Eo apblod, ct denaily is genaaatod
a E to E2, ct denauy Aeduced to J2.

vE t El, ct denitiy b JI.

TuO valey modolL Electaon EnaNgy VELSus waven0 j e ntyhe GaAs

Loa vallay . condclion

AE-036 ev Band

Fg= 43 eN Foabiddcn
Band
K
valenca2
Band
 Aernan

in the Lowen and upben valleys

Elcctaon Denslies
eguultbsuLum conditicn
saume undor an
the is l o w e thon the
electoic

when tha applied eleclac field electaons willL

E < EQ), no
ield e h e lover valey (
Eaansjer to upper
Valley.
E

EE
*whon the opplied eloctaic jiold higher than that
than h a t q uppenvalloy ( Er< E< Ev)
Louner valley arnd Jowen
electrons wil begin to EaansJer to upper valley
E A

E E Eu

than thaL
xwhen the applied elecluteld is higheat i a r e l t upber valoy.
allLelectaons w i l
uppen yalloy ( E< E),

U
O
K
EyE
The conduclivity q n Hhe Gia As is ginen as

whaa e - chas9e e" 6 x 1oc)

 mebility oj eloclaon in lower valloy NYACT
Deniiy eloctaon in loer vallay
L mobaltby ey eleclaon. in upher valloy
olocbron- in upper valloy
u Densily e

MODES OF OPE RAT|ON

GUNN OSCILLATION MODE

Length (L)
Facgueney Cf)x
A 1o cmsec.
-

openaling
1ocm
Dopingno)X Length ( L)>
is unikable.
In this mode the devco

AMPLIFICATION MoDE :
2STABLE

opaalirg Jroquenty ( f) x Length ( L) joi cm|sec

10" to io cm
DopUNg no)x Length (L)
=

CHARGE ACCUMvLATION CLSA) MODE

3. LIMITED 3PACE

(L)> 2xi0t cmjsec

-opealirg jaaqLenty ( f) x Longth
un a
t n LSA mode, the Gunn Dode. is placod

Jesonatan which is teLnod to an 0s culallon-teguano

fo
0sillatton perniocd
- In this modo, he deice can be biased to -sevensl

umes tha. Thacshold vollage

B1AS CIRCUIT OSCILLATION MoDE

? vey amall
frequoncy (f) x Length( 1)
Opeating
-Tha dorice is biased. at the Thacahnld
tha
The 0sclla tEon Hqueney can be cblainedin
Sange KHZ to loo M42
 61UNN DIoDE
ADVANTAGES OF
Tho Diode. is awaulabla in small sl22 and þertable.
duode is loss.
*Makng cost o tha

dirlo s stable and aoliable.

x At H Lgh Frcquoncies, the

x povdes ambyad sNR

I t in_cdudes high band widh.

APPLICA TIONS
Usadas oscllalor and Ambliier
*
conBael equupment
*usadL as communicaluon
Aadi
XUsed. in military, R adar d
waredaqueney.
gen0aling
X uedLas o s c u l a t o r a r
 ATION

aegicn - ho arty doped.

n g m . - neunally doped

undoped
baookdovon
The pn Juuncion will
JeneN3e VE bias
when h a ahbliod
vaue
eicecds a Thaoshold
The aa pid. ineioase
ROelie
BACoKdouN in cuuuent a t t h e ,
voltnge vol lage
v BakdeuunAvalandho Mwn
caused by tho and
electuons
hodensuiy e
T holes.
inacastu
I a Read Durda.
is pllaced amaler han :
Jemeulhat
andaJOvET3e biag
B a c a k c d o u e n vt is apbied,
along witha
wil.
thenn b e a k d o v n
S m a l RF voltage, becomos tve
ushon the RFvolkage
occuo
B . a a k d o u u n i s uniliated
a
*when h a at
aie ceated
holes and e
lange no .
t n undion EhenA0qLen
3wept aoOis
xThe e ale
nte dita0gion
xAtoraTaansitTime delay, the.olectaons
hanttmunal
collected al
ae
mones thaough the.
fetlse
Tho cuIAnt
D l e tAom aight tolet
time t o Avalancha ehang
xwhen the he
that torchage ta-pugh
buildup plus onahall Þeriod,
the.
drujt Aogion exccoda
Rf Vtby moathange
oP c u o n t uuilLlog tha
the dirde w i l
with these condns, curxonlz
exhibita -ve A0sistanco'{eRf
 PLICATiONS: +3)
MLOOwve. Beceives.

g? Panamalaic amblyiens.
Gii? Aadas
MLCOwave Amblijiong.
v) B0ad Band
*under JOverse biased condn, the charadeauslics
Dicle s aB shouen.
READ DIODE dyeront Aagians o
the
down t VB, a
whenLthe Aoea3e bias vt exceeds Baeak
maeloe ield very high-value appeaas at ntbin.
Desciplion
physical
Physical DescaublionThe helas mowingtn the. high fold.nagion aequia
sicindt enengyt erëte valence eletaons o the dom
e n t the conductionn band- AIubng tn Ayalanche
H Mulno eledron-hola pairs.
Avalanche Shacechanq siliconSLueune
|egion egien

L
EC
Electaic
Field
fiold Diatibution

XRead Diode is a ht-p-i t stucture, wh.ena thesubs cript

+ indicalas vey high dopirg.
* 0 Jogos b Intinsic maloial
DeNca consists o TUO OgLons.
The
a t which Avalanche Multtplicala
o n e i s tho Hhin b Aegion
FroldLonAvalanche aagien
occus.Thii anqionig callad HLgh
which
o h e r uwgton is L a y Jegion thooughh
The to pt contac thiis
gencnaed holos mulat dytin moing
called Intaiinaic Aog ion 0DAjt
egion
gicn is
The b oqion is veaH thin u called
T h e sbaco bebweon nT-Pdunetion andi-t junclion
Spaco changa oguon
 AVALANCHE MULTL PLICATION*

k when the Aoensa- biased yollage. is wel abDue the.Baak

ertends Aem nt-p
vollag, the Space -change gion alwaysto tha L-* jundlion.
andi A0gions
jundion thacugh thaþ
i n mong Jaom Let
xA besitive chagegiues a aising tield.
to Hight
T h e maximumjield which occLS at the. nT-b undion, 13
about -s.ovesal ktundenod Kilovelts peL conimelen:
tha n-b junlion
*Caueas Cheles) moing in the high ield. n o a
conductibn
cguix enoag valence. eloctoons. int tho
to knocK
band, thus baoduing holo- eleckoon pa/ns.

By Paopon dopirg , the Jield givena eladively shoa

canbe
avwalanche multibliecalion s Corincd toavey
heak s o thak
at tha n-Þ Juncion
n a a r o w Scgicn

The electrons moveinto thantacgLon and

he holes diit
to h e þt aagion uwitha
thaough the. Space-cha1ge Agien
silicon
constant veloit e abrut jot cmls - t o
The Taansit time ej a hole acADAs the cdAyt t-10gion L i

given b
T

The Avalanche Multiplicabion Jactor is given b

M
-(vvJ"
where

V= applicd vollage
V Avalonche Bacakdouon volage
n 3-6 0rslicon
P VaTL w unit aaca
The olP Powen is gnby o +04

Va-ampitude a c vollage
T - Diect uVenl

qualiy factoa (q) q aciLcuit is dgined as

marimum stanod eneaqg
G=
Aveiage Dii3ipaled poyer
 44)
LANCHE RASIT IME DEVICES
akd x Thesc dovices employ Avalancha and TAansit
time papealics

Semuconducton s t L c t u r O t o baoduce nogative e3isBan

a t LwaNe requencueg. amplijas
A0sislance is employed in- Lwave
x This negatie
and as illalors
TRANSIT TIME
DIODES CIM PAT T)
NCHE AND
MPACT AVALA
seersa
duodeis
h a e many z e m s
An- TH PATT
biasedL a b o r e thebraak
IM PATT DLOdes highdoburg
dousn vollege. The
( n--L-p* Aerel baoduce
Aagion. e d a u t
thin depletion
a
omaadsnagons

nt
i) n - i- Tha, cascading. e

t inlenaclion Lmbact Ionizaionere

as tha voMlagece
basic mechaniam
IEs Hence
TanitTime chaage carueNs.
Avalanche and. he
onccalled. IMPATT Diodos.
Diodes
Read Tybe as
Resislance
ethibiE nJerardiaL Negative
*These Divde3
olnus
biased, i n he depletion
is roverse
w h e n a p-n junclien toKa3 place.
Layon,
Avalanche B.AOaKdouun. Tadians.
the appliediold by ml2
Avalancha cusOont Jags nillL daiyt t
awalancha curent
Constituiting
T h e cauers electsode
eledaodes f ) holos to negative
the sbeclie
electaode
and electrons to boautive caaiea3 ale not
vaUuous
tavelled by the
Tho dislance caused by
but Lho
addilionall pha 3e shiE negalire
eguual to crcate a
casaio3
makos he
caries
daipt
ALisanco:
Taansit angle is
Resistanco. w. Nt»
The v a u a l i o n e/ Negaline
as h o u n bolour

Negatire
Reaiilano

12TT Padians
The gaaph shows that mazimum acsislanco is ouered
decr0ase3 apidly.
al - TT Above T, theAiiatanco.
aound. h e T Traniist anglel
xTheebeaung q u o n y
T T a n i t Tima
2T
Diyt velocitH mls)
f=VdL
2L L D i t length m)

t h e Tansit angle and is gven by

wL

*AE a gn aeq, the. m a olP poeroj a single Diade i s

umilod by semLcenduuctor malorials.
T o al uniyoam Avcalancho, maimum. volAage Lhat can be
appliod. acs0is tha. Dode is guwen by

PmEm L
whoro L- Depletion Length
Em- Mazimum Electaic ficld
The Marimum cunent is g e n by

Tm:Jm A
Lm = oEm A

In: ES EmA

Im Es Em A
L
. ' Tha ubber imit q tho powe input i guen by
Pm Vm Tm
Pn= E Es aA
 nd thc pleasma is etuacted Jom the Acgien
e s i d i u a chaage is Aemoed,
h e vollage uncaoasc
ASthe
Dode chaages again
u a h e and and maintains
Diode is chaaged tlly
J c m e þeinE h a douen
X AE while eurronl daoha
a c o n s t a n t voltoge acuis
it
Diode
TRA PATT
Veltage and cvent waforms o

chagin9
PLaamaJcrmalion
voltage Plaama zbarlion
and
Reidual extaadion
cuoont Changing
A G velloge

Cuent

Thus TRAPATT Diode can operate at ccmpailively Low-aeq

TYPICAL PARA METERS
Poe -|1-2 KW at l-1 GI HZ.

ENLcuen.cy 157. at o-6 GtZ.

>FAc9 ange -0:5 G1Hz to 5oGHz.

 4
EJicion n): Pac
Pac
Pae
n Va Ta

P-n juntlicn

TRAPATT DIoDES:

TRAPATT- TAnpped plaama Avalan.che Tiagenod. Taansd Did

xA 39u0suad pulse is usedt ezcte TRAMTT Diode.

*As s 0 o n as tho Diode s ezdted, the chaage is accumulLated
in ho Deplotion sogion at the iuncdion and eleclaie Jiold
acoors the jun dion vaouios linearly.
w h e n sulicient ca9ios aoo genealad, i t then. lepross
tho deplotion angion-, Caulng vetlage to Jall doun-
hioughout
this intvwal, Jonmalion blasma taxes place.
* Duning
conlinue t decacase to acsiduual value
* vollage and cwent