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SKKT SKKH

1 05-04-2007 NOS © by SEMIKRON

RECTIFIER,DIODE,THYRISTOR,MODULE

Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp.

Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp.

Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp.

2 05-04-2007 NOS © by SEMIKRON

SKKT 250, SKKH 250 THYRISTOR BRIDGE,SCR,BRIDGE

Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp.

Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time

Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time

3 05-04-2007 NOS © by SEMIKRON

RECTIFIER,DIODE,THYRISTOR,MODULE

Fig. 9 Gate trigger characteristics

Dimensions in mm

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This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.

4 05-04-2007 NOS © by SEMIKRON