PD - 97094A

IRF6644PbF
IRF6644TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
l RoHS Compliant  VDSS VGS RDS(on)
l Lead-Free (Qualified up to 260°C Reflow)
100V max ±20V max 10.3mΩ@ 10V
l Application Specific MOSFETs
l Ideal for High Performance Isolated Converter Qg tot Qgd Vgs(th)
Primary Switch Socket 35nC 11.5nC 3.7V
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques  DirectFET™ ISOMETRIC
MN
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH SJ SP MZ MN
Description
The IRF6644PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6644PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom
applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e 10.3
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e 8.3 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f 60
IDM Pulsed Drain Current g 82
EAS Single Pulse Avalanche Energy h 220 mJ
IAR Avalanche Current g 6.2 A
0.08 13
TA= 25°C
ID = 6.2A
(mΩ)
Typical R DS (on), (Ω)

VGS = 7.0V
0.06 12
DS(on)

VGS = 8.0V
0.04 11
Typical R

TJ = 125°C VGS = 10V

0.02 10

TJ = 25°C VGS = 15V

0.00 9
4 6 8 10 12 14 16 0 4 8 12 16 20
VGS, Gate-to-Source Voltage (V) ID, Drain Current (A)
Fig 1. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical On-Resistance Vs. Drain Current
Notes:
 Click on this section to link to the appropriate technical paper. „ TC measured with thermocouple mounted to top (Drain) of part.
‚ Click on this section to link to the DirectFET Website. … Repetitive rating; pulse width limited by max. junction temperature.
ƒ Surface mounted on 1 in. square Cu board, steady state. † Starting TJ = 25°C, L = 12mH, RG = 25Ω, IAS = 6.2A.
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Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 10.3 13 mΩ VGS = 10V, ID = 10.3A c
VGS(th) Gate Threshold Voltage 2.8 ––– 4.8 V VDS = VGS, ID = 150µA
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -10 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 15 ––– ––– S VDS = 10V, ID = 6.2A
Qg Total Gate Charge ––– 35 47
Qgs1 Pre-Vth Gate-to-Source Charge ––– 8.0 ––– VDS = 50V
Qgs2 Post-Vth Gate-to-Source Charge ––– 1.6 ––– nC VGS = 10V
Qgd Gate-to-Drain Charge ––– 11.5 17.3 ID = 6.2A
Qgodr Gate Charge Overdrive ––– 13 ––– See Fig. 15
Qsw Switch Charge (Qgs2 + Qgd) ––– 13.1 –––
Qoss Output Charge ––– 17 ––– nC VDS = 16V, VGS = 0V
RG Gate Resistance ––– 1.0 2.0 Ω
td(on) Turn-On Delay Time ––– 17 ––– VDD = 50V, VGS = 10Vc
tr Rise Time ––– 26 ––– ID = 6.2A
td(off) Turn-Off Delay Time ––– 34 ––– ns RG=6.2Ω
tf Fall Time ––– 16 –––
Ciss Input Capacitance ––– 2210 ––– VGS = 0V
Coss Output Capacitance ––– 420 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz
Coss Output Capacitance ––– 2120 ––– VGS = 0V, VDS = 1.0V, f=1.0MHz
Coss Output Capacitance ––– 240 ––– VGS = 0V, VDS = 80V, f=1.0MHz

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 10 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 82 integral reverse
(Body Diode)d p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 6.2A, VGS = 0V c
trr Reverse Recovery Time ––– 42 63 ns TJ = 25°C, IF = 6.2A, VDD = 50V
Qrr Reverse Recovery Charge ––– 69 100 nC di/dt = 100A/µs c

Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.

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 IRF6644PbF
Absolute Maximum Ratings
Parameter Max. Units
PD @TA = 25°C Power Dissipation c 2.8 W
PD @TA = 70°C Power Dissipation c 1.8
PD @TC = 25°C Power Dissipation f 89
TP Peak Soldering Temperature 270 °C
TJ Operating Junction and -40 to + 150
TSTG Storage Temperature Range

Thermal Resistance
Parameter Typ. Max. Units
RθJA Junction-to-Ambient cg ––– 45
RθJA Junction-to-Ambient dg 12.5 –––
RθJA Junction-to-Ambient eg 20 ––– °C/W
RθJC Junction-to-Case fg ––– 1.4
RθJ-PCB Junction-to-PCB Mounted 1.0 –––

100

D = 0.50
10 0.20
0.10
Thermal Response ( Z thJA )

0.05
1 0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.1
τJ τC 0.6784 0.00086
τJ τ
τ1 τ2
17.299 0.57756
τ3 τ4
τ1 τ2 τ3 τ4
0.01 17.566 8.94
Ci= τi/Ri 9.4701 106
SINGLE PULSE Ci i/Ri
0.001 ( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

t1 , Rectangular Pulse Duration (sec)

Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

Notes:
ƒ Surface mounted on 1 in. square Cu board, steady state. ‰ Mounted on minimum footprint full size board with metalized
„ TC measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink.
ˆ Used double sided cooling, mounting pad with large heatsink. Š Rθ is measured at TJ of approximately 90°C.

ƒ Surface mounted on 1 in. square Cu ‰ Mounted to a PCB with ‰ Mounted on minimum

board (still air). small clip heatsink (still air) footprint full size board with
metalized back and with small
clip heatsink (still air)
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IRF6644PbF
100 100
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

6.0V

VGS
6.0V VGS TOP 15V
TOP 15V 10V
10V 8.0V
10 8.0V
7.0V
10 7.0V
BOTTOM 6.0V
BOTTOM 6.0V

≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH

Tj = 25°C Tj = 150°C
1 1
0.1 1 10 100 0.1 1 10 100

VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics Fig 5. Typical Output Characteristics

100.00 2.0

TJ = 150°C ID = 10.3A
TJ = 25°C VGS = 10V
ID, Drain-to-Source Current(Α)

Typical R DS(on), (Normalized)

10.00 TJ = -40°C
1.5

1.00

1.0
0.10

VDS = 10V
≤ 60µs PULSE WIDTH
0.01
3.0 4.0 5.0 6.0 7.0 0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 6. Typical Transfer Characteristics Fig 7. Normalized On-Resistance vs. Temperature

100000 20
VGS = 0V, f = 1 MHZ
ID= 6.2A VDS = 50V
Ciss = Cgs + Cgd, Cds SHORTED
VDS= 20V
VGS, Gate-to-Source Voltage (V)

Crss = Cgd
16
10000 Coss = Cds + Cgd
C, Capacitance (pF)

Ciss 12
1000
Coss
8

Crss
100
4

10 0
1 10 100
0 20 40 60
VDS , Drain-to-Source Voltage (V) QG Total Gate Charge (nC)

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage Fig 9. Typical Total Gate Charge vs
Gate-to-Source Voltage
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 IRF6644PbF
1000.0 1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)

ID, Drain-to-Source Current (A)

ISD , Reverse Drain Current (A)

100.0 100

100µsec

10.0 TJ = 150°C 10
TJ = 25°C 1msec
TJ = -40°C
100msec
1.0 1
TA = 25°C 10msec
Tj = 150°C
VGS = 0V Single Pulse
0.1 0.1
0.0 1.0 2.0 3.0 4.0 5.0 0.01 0.10 1.00 10.00 100.00 1000.00
VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 10. Typical Source-Drain Diode Forward Voltage Fig11. Maximum Safe Operating Area

12 5.0
ID = 1.0A

Typical VGS(th) Gate threshold Voltage (V)

ID = 1.0mA
10 4.5
ID = 250µA
ID = 150µA
ID , Drain Current (A)

8 4.0

6 3.5

4 3.0

2 2.5

0 2.0
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

TA , Ambient Temperature (°C) TJ , Junction Temperature ( °C )

Fig 12. Maximum Drain Current vs. Ambient Temperature Fig 13. Typical Threshold Voltage vs.
Junction Temperature
1000
EAS, Single Pulse Avalanche Energy (mJ)

ID
TOP 2.8A
800 3.3A
BOTTOM 6.2A

600

400

200

0
25 50 75 100 125 150

Starting TJ, Junction Temperature (°C)

Fig 14. Maximum Avalanche Energy Vs. Drain Current

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IRF6644PbF

Id
Vds

Vgs

L
VCC
DUT Vgs(th)
0
1K
S

Qgs1 Qgs2 Qgd Qgodr

Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform

V(BR)DSS
15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01Ω I AS

Fig 16b. Unclamped Inductive Test Circuit Fig 16c. Unclamped Inductive Waveforms

RD
VDS VDS
90%
VGS
D.U.T.
RG
+
- VDD 10%
VGS
10V
td(on) tr td(off) tf
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms
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 IRF6644PbF

Driver Gate Drive

D.U.T P.W.
Period D=
+ P.W. Period

ƒ *
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • di/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• ISD controlled by Duty Factor "D" - Inductor Current
Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 18. Diode Reverse Recovery Test Circuit for N-Channel

HEXFET® Power MOSFETs

DirectFET™ Substrate and PCB Layout, MN Outline

(Medium Size Can, N-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.

G = GATE
D = DRAIN
S = SOURCE

D D
S
G
S
D D

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IRF6644PbF
DirectFET™ Outline Dimension, MN Outline
(Medium Size Can, N-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.

DIMENSIONS
METRIC IMPERIAL
CODE MIN MAX MIN MAX
A 6.25 6.35 0.246 0.250
B 4.80 5.05 0.189 0.201
C 3.85 3.95 0.152 0.156
D 0.35 0.45 0.014 0.018
E 0.88 0.92 0.034 0.036
F 0.78 0.82 0.031 0.032
G 1.38 1.42 0.054 0.056
H 0.88 0.92 0.034 0.036
J 0.48 0.52 0.019 0.020
K 1.16 1.29 0.046 0.051
L 2.74 2.91 0.109 0.115
M 0.616 0.676 0.0235 0.0274
R 0.020 0.080 0.0008 0.0031
P 0.08 0.17 0.003 0.007

DirectFET™ Part Marking

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DirectFET™ Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts. (ordered as IRF6644TRPBF). For 1000 parts on 7"
reel, order IRF6644TR1PBF
REEL DIMENSIONS
STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000)
METRIC IMPERIAL METRIC IMPERIAL
CODE MIN MAX MIN MAX MIN MAX MIN MAX
A 330.0 N.C 12.992 N.C 177.77 N.C 6.9 N.C
B 20.2 N.C 0.795 N.C 19.06 N.C 0.75 N.C
C 12.8 13.2 0.504 0.520 13.5 12.8 0.53 0.50
D 1.5 N.C 0.059 N.C 1.5 N.C 0.059 N.C
E 100.0 N.C 3.937 N.C 58.72 N.C 2.31 N.C
F N.C 18.4 N.C 0.724 N.C 13.50 N.C 0.53
G 12.4 14.4 0.488 0.567 11.9 12.01 0.47 N.C
H 11.9 15.4 0.469 0.606 11.9 12.01 0.47 N.C

LOADED TAPE FEED DIRECTION

DIMENSIONS
METRIC IMPERIAL
CODE MIN MAX MIN MAX
A 7.90 8.10 0.311 0.319
B 3.90 4.10 0.154 0.161
C 11.90 12.30 0.469 0.484
D 5.45 5.55 0.215 0.219
E 5.10 5.30 0.201 0.209
F 6.50 6.70 0.256 0.264
G 1.50 N.C 0.059 N.C
H 1.50 1.60 0.059 0.063

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/06
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/