EE610: CMOS Analog

Circuits

L1: MOS Models-1 (29th july 2013)

B. Mazhari
Dept of EE,
Dept. EE IIT Kanpur

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 Opamp &
OTA

Current Mirror &

Reference

Differerential Amplifier

Basic Amplifier Stages

Fabrication &
Layout

Device Model
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 For an analog circuit designer, how important are
device models?

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Circuit Analysis

Analysis of a circuit involves transformation of it into a set of

mathematical equations and their solution

R I KVL, KCL
VD = ? VS  IR  VD

VS D models I
VD  nV
VT  ln(
l (  1)
IS

VD
D io d e M o d e l: I D  I S  {exp( )  1}
n VT

Mathematical equaions can be transformed into a circuit as well

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Analyze the following circuit and determine Vout

VDD=3.3V

RDS = 50K
VOUT  VDS  VDD  I DS RDS
VOUT
VGS  VBias  1.2
W/L=2/1
VBias =1.2V

To obtain VOUT, we need a relationship between current and

voltages of the MOS transistor (IDS vs. VGS) or in other words we
need a model of the MOS transistor

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What is a model?
“A model is a representation for a PURPOSE”

Depending on the purpose, an element can have several

different models

L R

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In general, there is a tradeoff between Accuracy and Complexity of
model
vd
iD  IS {exp( )  1}
VT
I

+ vd -

V rf
V > V

V < V
Simplicity
open circuit

V
Accuracy
V > V

V < V
open circuit

V>0

V<0
open circuit
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What is the use of a less accurate model?
R1 R

C
VS R2

L R

C1

R1 R1 L1

VS VS R2
R2 C2

L2
V2 R2

VS R1  R 2 V2 R 2  j L 2

VS j C 2 R 2   2 L 2 C 2  1
R 2  j  L 2  ( R1  j  L1 )
j  C 1 R1   2 L1 C 1  1
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Often accurate models are nonlinear making analysis difficult

vd
iD  IS {exp( )  1}
n VT
I S : R e v e rs e S a tu ra tio n C u rre n t
Vd
VT  kT / q  26m V at T  300K

R
VO = ?
I
I VS  IR  nVT  ln(  1)
VS D IS

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 Iterative Method Graphical Method: Method of
I
Load Line
VS  IR  VO VO  nV
VT  ln(
l (  1)
IS
I

Assume VO  0.6V
0 6V

VS  VO solution
Calculate I  VS/R
R

R
Re-calculate
l l t VO  nVT  ln(I IS  1)
VS VO
I
Convergence: 
I
•Analysis using a non-linear
non linear model is relatively difficult and time consuming.
consuming

•It also does not give a symbolic expression that can provide insight and help in the
d i off the
design th circuit.
i it

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B. Mazhari, IITK Need SIMPLER and LINEAR Device Models G-Number
1. A simpler model makes analysis easier and the results of
analysis
l i are easier
i tot understand
d t d

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2. A simpler analytical result is also essential for carrying out
design
g
R1
V2
V2
 0 .2 at 1kHz frequency VS R2
VS

Design with simple model

R1

R2 R1
VS  0 .2  4
R1  R 2
R2
R2

Try doing the design with the more accurate but complicated model:
V2 R 2  j L 2
C1 
VS j C 2 R 2   2 L 2 C 2  1
R1 L1
R 2  j  L 2  ( R1  j  L1 )
j  C 1 R1   2 L1C 1  1
VS R2
C2

L2 Note that design requires equations to be inverted

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Although a simpler model allows design to be carried out, the design
would be inaccurate and thus would not meet specifications !

Design: Determine the values of resistors R1 and R2 so that output

voltage is 0.15V.
0 15V

1  0 .7
VO   R1  0 .1 5  R 1  R 2
R1  R 2
Upon fabrication with R1=R2=1K, the output voltage in the circuit
was measured to be 0.209V !
The error is due to use of a simple diode model
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B. Mazhari, IITK Correct design: R1=R2=30 G-Number
Role of simple model in design cycle
Simple Models

Design meets Specs.

DESIGN Implement

SIMULATE

Accurate but complex

Models 14
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A method for obtaining a simple but not too inaccurate model is to develop a set of
models for different regions or modes of operation instead of a single model applicable
over the entire range of excitation.
excitation

In each region of operation, a different set of assumptions is used to obtain a simple

result.
result

IDS vs. VDS

As expected,
expected this sectioning of device operation into regions creates problems at the
boundaries by causing discontinuity in device characteristics
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Device Model: Summary

Since the purpose of a model is to predict the characteristics of the

transistor, a model should therefore be Accurate.

Accurate models are often complex. This makes analysis difficult. Even
if one could analyze the circuit,
circuit the result obtained would be so complex
that one would not get significant insight into the operation of the circuit.

Complex but accurate models are also not suitable for carrying out first
level of design.

• A less accurate but simple model is thus very useful for quick analysis,
for obtaining results that are easily comprehensible and can be easily
inverted to carry out the design.
•Accurate but complicated
p models are used with circuit simulators to
verify and tune the design obtained with simple models.
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Metal Oxide Semiconductor Field Effect Transistor:

MOSFET

Depletion Mode Enhancement Mode

N-Channel P-Channel N-Channel P-Channel

D D D D

G B B B
G G B G

S S S S
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Simplified Symbols
D D

G
G B

S/B
S

D D

G
G B

S/B
S

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Schematic: Enhancement Mode MOSFET
G D
S
VG > VTN
n+ ‐‐‐‐‐‐‐‐‐‐‐‐‐‐‐‐‐‐‐‐‐‐‐‐‐‐‐‐ n+

p-type

VTN
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 Does current flow below threshold voltage in a MOSFET?

What about current below cut-in voltage in a diode or a BJT?

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 IDS

Above threshold
VTN
VGS

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MOS Operating Regions

IDS vs.  V
vs VDS

saturation
Triode

VDSAT
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