AO4932

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

SRFET TM

General Description Features

The AO4932 uses advanced trench technology to FET1 FET2
provide excellent R DS(ON) and low gate charge. The two VDS (V) = 30V V DS(V) = 30V
MOSFETs make a compact and efficient switch and ID = 9A I D=9A (V GS = 10V)
synchronous rectifier combination for use in DC-DC RDS(ON) < 15.8mΩ <15.8mΩ (VGS = 10V)
converters. A monolithically integrated Schottky diode in RDS(ON) < 19.6mΩ <23mΩ (V GS = 4.5V)
parallel with the synchronous MOSFET to boost
efficiency further. Standard Product AO4932 is Pb-free
(meets ROHS & Sony 259 specifications).
UIS TESTED!
Rg,Ciss,Coss,Crss Tested

SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max FET1 Max FET2 Units
Drain-Source Voltage VDS 30 30 V
Gate-Source Voltage VGS ±12 ±20 V
Continuous Drain TA=25°C 9.0 9.0
A
Current AF TA=70°C IDSM 7.2 7.2
Pulsed Drain Current B IDM 40 40 A
C
Avalanche Current IAR 16 16 A
C
Repetitive avalanche energy L=0.3mH EAR 38 38 mJ
TA=25°C 2.0 2.0
PDSM W
Power Dissipation TA=70°C 1.3 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C

Thermal Characteristics FET1

Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 74 90 °C/W
C
Maximum Junction-to-Lead Steady-State RθJL 32 40 °C/W

Thermal Characteristics FET2

Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 74 90 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 32 40 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4932

FET1 Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=1mA, VGS=0V 30 V
VDS=30V, V GS=0V 0.01 0.1
IDSS Zero Gate Voltage Drain Current mA
TJ=125°C 5 10
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 0.1 µA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 1.8 2.4 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 40 A
VGS=10V, ID=9A 13 15.8
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 20.2 25.2
VGS=4.5V, ID=7A 16 19.6 mΩ
gFS Forward Transconductance VDS=5V, ID=9A 64 S
VSD Diode Forward Voltage IS=1A,V GS=0V 0.4 0.6 V
IS Maximum Body-Diode + Schottky Continuous Current 4.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1450 1885 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 224 pF
Crss Reverse Transfer Capacitance 92 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.6 3.0 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 24 31
Qg(4.5V) Total Gate Charge 12.0 16 nC
VGS=10V, V DS=15V, ID=9A
Qgs Gate Source Charge 3.9 nC
Qgd Gate Drain Charge 4.2 nC
tD(on) Turn-On DelayTime 5.5 ns
tr Turn-On Rise Time VGS=10V, V DS=15V, R L=1.7Ω, 4.7 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 24.0 ns
tf Turn-Off Fall Time 4.0 ns
trr Body Diode Reverse Recovery Time IF=9A, dI/dt=300A/µs 10 12 ns
Qrr Body Diode Reverse Recovery Charge IF=9A, dI/dt=300A/µs 6.8 nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in
any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev 2: June 2007

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4932

FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 30
10V
4.5V VDS=5V
4V 25
60
20
ID (A)

3.5V

ID(A)
40 15

10
20
VGS=3V
5 125° 25°C
0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
DYNAMIC PARAMETERS
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

20 2
VGS=10V
VGS=4.5V ID=9A
1.8
Normalized On-Resistance

17
RDS(ON) (mΩ)

1.6

14 VGS=4.5V
1.4
ID=7A

11 1.2
VGS=10V

1
8
0 5 10 15 20 25 30 0.8
ID (A) 0 30 60 90 120 150 180
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature

45 1.0E+02

40 ID=9A 1.0E+01 125°C

35 1.0E+00
30 25°C
RDS(ON) (mΩ)

1.0E-01
IS (A)

125°C
25
1.0E-02
20
1.0E-03
15
1.0E-04
10 25°C
5 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

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AO4932

FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2500

8 2000 Ciss
VDS=15V

Capacitance (pF)
ID=9A
VGS (Volts)

6 1500

4 1000

2 Crss
500
Coss

0 0
0 5 10 15 20 25 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
DYNAMIC PARAMETERS

100.0 50
10µs

10.0 40 TJ(Max)=175°C
100µ TC=25°C
RDS(ON) 1ms
ID (Amps)

Power (W)

limited 30
1.0 10ms
DC
TJ(Max)=150°C 20
0.1 TA=25°C
10

0.0
0
0.1 1 10 100
VDS (Volts) 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E)
Ambient (Note E)

10
In descending order
ZθJA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

0.1

D=T on/T PD
0.01
TJ,PK=T A+PDM.ZθJA.RθJA
Ton
Single Pulse RθJA=62.5°C/W T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4932

FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.0E-01
1
0.9 20A
1.0E-02 0.8
VDS=24V 0.7
1.0E-03 0.6
IR (A)

VSD(V)
VDS=12V 0.5
10A
1.0E-04 0.4 5A
0.3
1.0E-05 0.2
IS=1A
0.1
1.0E-06 0
0 50100 150 200 0 50 100 150 200
Temperature (°C) Temperature (°C)
DYNAMIC Figure 12: Diode Reverse Leakage Current vs.
PARAMETERS Figure 13: Diode Forward voltage vs. Junction
Junction Temperature Temperature

30 12 12 3
di/dt=800A/us
25 125ºC 10 10 di/dt=800A/us 2.5
125ºC

20 8 8 2
trr
Qrr (nC)

trr (ns)
Irm (A)

25ºC 25ºC
15 6 6 1.5

S
Qrr 125ºC
10 4 4 25ºC 1
Irm S
5 25ºC 2 2 0.5
125ºC
0 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Is (A) Is (A)
Figure 14: Diode Reverse Recovery Charge and Figure 15: Diode Reverse Recovery Time and Soft
Peak Current vs. Conduction Current Coefficient vs. Conduction Current

25 10 15 2.5
125ºC Is=20A
20 8 12 2
Is=20A 125ºC
25ºC
15 6 9 1.5
Qrr (nC)

Irm (A)

25ºC
trr (ns)

trr
S

10 125º 4 6 25ºC 1

5 Qrr 25ºC 2
3 125ºC 0.5
S
0 Irm 0
0 0
0 200 400 600 800 1000
0 200 400 600 800 1000
di/dt (A) di/dt (A)
Figure 16: Diode Reverse Recovery Charge and Figure 17: Diode Reverse Recovery Time and Soft
Peak Current vs. di/dt Coefficient vs. di/dt

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AO4932

FET2 Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, V GS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 1.7 2.3 V
ID(ON) On state drain current VGS=10V, V DS=5V 40 A
VGS=10V, ID=9A 13 15.8
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 19 23
VGS=4.5V, ID=7A 18.6 23 mΩ
gFS Forward Transconductance VDS=5V, ID=9A 23 S
VSD Diode Forward Voltage IS=1A,V GS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 955 1250 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 145 pF
Crss Reverse Transfer Capacitance 112 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.5 0.85 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 17 22 nC
Qg(4.5V) Total Gate Charge 9 11.7 nC
VGS=10V, V DS=15V, ID=9A
Qgs Gate Source Charge 3.4 nC
Qgd Gate Drain Charge 4.7 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, V DS=15V, R L=1.7Ω, 6 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 19 ns
tf Turn-Off Fall Time 4.5 ns
trr Body Diode Reverse Recovery Time IF=9A, dI/dt=100A/µs 16.7 20 ns
Qrr Body Diode Reverse Recovery Charge IF=9A, dI/dt=100A/µs 6.7 nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in
any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev 2: June 2007

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4932

FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

45 35
10V
40
4.5V 4V
28 VDS=5V
35
30
21
25
ID (A)

ID(A)
3.5V 125°C
20
14
15
13.4 16
10 VGS=3V 25°C
7
5 22 26
0 0
0 1 2 3 4 5 1.5 2 2.5 30.76 3.5 4 4.5
VDS (Volts) VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

26 1.6
24 VGS=10V
VGS=4.5V ID=9A
Normalized On-Resistance

22 1.4
RDS(ON) (mΩ)

20
VGS=4.5V
18
1.2 ID=7A
16
VGS=10V
14
1
12

10
0 5 10 15 20 0.8
ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature

50 1.0E+01

1.0E+00
40
ID=9A 1.0E-01
RDS(ON) (mΩ)

125°C
IS (A)

30 1.0E-02
125°C
25°C
1.0E-03
20
25°C 1.0E-04

10 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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AO4932

FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1500
VDS=15V
ID=9A 1250
8
Ciss

Capacitance (pF)
1000
VGS (Volts)

6
750
4
500
Coss 13.4 16
2
250

Crss
22 26
0 0
0 4 8 12 16 20 0 5 10 15 20 25 30
0.76
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 50
10µs
40
10.0
100µs
RDS(ON) 1ms
ID (Amps)

Power (W)

limited 30
10ms TJ(Max)=150°C
1.0
TA=25°C
DC
20
TJ(Max)=150°C
0.1 TA=25°C
10

0.0
0
0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10 100
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=T on/T In descending order
TJ,PK=T A+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd. www.aosmd.com