Basics of Electronics Engineering Lab

(EC-102)

Name: Ayushi Group: RollNo:2010991844

EXPERIMENT NO. 1
AIM: Plot and analyze the forward and reverse characteristics of PN
junction Si / Ge diode and determine the knee voltage.

THEORY:

Forward Bias occurs when a voltage is applied across the solar cell such
that the electric field formed by the P-N junction is decreased. It eases
carrier diffusion across the depletion region, and leads to increased
diffusion current.

FUNCTION OF A P-N JUCTION DIODE IN

FORWARD BIAS:
When a P-N junction diode is forward biased the electrons from the
negative end of the battery travel into the N side of the diode and cross over
to the P side and combine with the holes. Electrons are also emitted from
the P side into the positive terminal of the battery producing more free
holes that can travel over to the N side and combine with the electrons.
Thus, the depletion layer along with the barrier potential of the junction
decreases, decreasing the overall resistance of the diode.

Basics of Electronics Engineering Lab

(EC-102)
FUNCTION OF A P-N JUCTION DIODE IN
REVERSE BIAS:
When the diode is reverse biased, the battery attracts and pulls out the
majority charge carriers from each side of the junction diode, that is, holes
from the P side and electrons from the N side. The holes from the P side
enter the negative terminal of the battery and the electrons go into the
positive terminal of the battery. This widens the depletion region at the
junction and increases the barrier potential. Hence, it becomes more
difficult for current to pass through the diode and the resistance of the
diode increases very much.

Basics of Electronics Engineering Lab

(EC-102)
 CIRCUIT DIAGRAMS:
Forward-bias-si Diode

Reverse-bias-si Diode

Basics of Electronics Engineering Lab

(EC-102)
 Forward-Bias Ge Diode

Reverse-Bias Ge Diode

Basics of Electronics Engineering Lab

(EC-102)
Basics of Electronics Engineering Lab
(EC-102)
PROCEDURE:
Forward-Bias Si Diode:
1. Set DC voltage to 0.2 V .
2. Select the diode.
3. Set the resistor.
4. Voltmeter is placed parallel to Silicon diode and ammeter series with
resistor.
5. The positive side of battery to the P side(anode) and the negative of
battery to the N side(cathode) of the diode.
6. Now vary the voltage upto 5V and note the Voltmeter and Ammeter
reading for particular DC voltage .
7. Take the readings and note Voltmeter reading across Silicon diode
and Ammeter reading.
8. Plot the V-I graph and observe the change.
9. Calculate the dynamic resistance of the diode. rd=ΔV/ΔI
10.Therefore from the graph we see that the diode starts conducting
when the forward bias voltage exceeds around 0.6 volts (for Si diode).
This voltage is called cut-in voltage.

Graph:
Basics of Electronics Engineering Lab
(EC-102)
Basics of Electronics Engineering Lab
(EC-102)
Reverse-Bias Si Diode:
1. Set DC voltage to 0.2 V .
2. Select the diode.
3. Set the resistor.
4. Voltmeter is placed parallel to Silicon diode and ammeter series with
resistor.
5. The positive terminal of battery is connected to the N side(cathode)
and the negative terminal of battery is connected to the P side(anode)
of a diode.
6. Now vary the voltage upto 30V and note the Voltmeter and Ammeter
reading for DC voltage .
7. Take the readings and note Voltmeter reading across Silicon diode
and Ammeter reading.
8. Plot the V-I graph and observe the change.

Graph:
Basics of Electronics Engineering Lab
(EC-102)
Forward Bias Ge Diode:
1. Set DC voltage to 0.2 V .
2. Use the resistor of 1K ohms and a Germanium diode.
3. Voltmeter is placed parallel to Germanium diode and ammeter series
with resistor.
4. The positive terminal of battery is connected to the P side(anode) and
the negative terminal of battery is connected to the N side(cathode) of
the diode.
5. Now vary the voltage upto 30V and note the Voltmeter and Ammeter
reading for particular DC voltage .
6. Take the readings and note Voltmeter reading across Germanium
diode and Ammeter reading.
7. Plot the V-I graph and observe the change.
8. Therefore from the graph we see that the diode starts conducting
when the forward bias voltage exceeds around 0.3 volts (for Ge
diode). This voltage is called cut-in voltage.

Basics of Electronics Engineering Lab

(EC-102)
 Graph:

Reverse Bias Ge Diode:

1. Set DC voltage to 0.2 V .

2. Use the resistor of 1K ohms and a Silicon diode.

3. Voltmeter is placed parallel to Silicon diode and

ammeter series with resistor.

Basics of Electronics Engineering Lab
(EC-102)
4. The positive of battery to the N side(cathode) and the

negative of battery to the P side(anode) of a diode.

and Ammeter reading for DC voltage.

5. Now vary the voltage upto 30V and note the Voltmeter

6.Take the readings and note Voltmeter reading across

Silicon diode and Ammeter reading.

7. Plot the V-I graph and observe the change.

Graph:

Basics of Electronics Engineering Lab

(EC-102)
 Conclusion:
1. The change in current when voltage across diode is less than
knee voltage is increased during forward biasing.

2. The current increases when voltage across diode exceeds knee

voltage during forward biasing.

3. The value of peak inverse voltage across diode in reverse

biasing is zero.

Basics of Electronics Engineering Lab

(EC-102)
Basics of Electronics Engineering Lab
(EC-102)