PTAA/Si and PTAA/SiGe organic-inorganic

solar cell: Effect of interface and active

layer thickness on efficiency

Dr. Bablu K. Ghosh

Sr. Lecturer, UMS

Invited Speech
MATERIALS SCIENCE WORLD FORUM -21, Edinburgh, Scotland, UK

1 21 December 2021
MSWF-2021
 The key problem of the planet
now?

Climate change and global

warming
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 Problem and outcome
Fossil fuels are depleting rapidly

Huge CO2 emission

Global temperature rise

Sea levels rise

Rise of health risk

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 Key reason of Specific low cost renewable energy
usages and related problem solving
problems?

Energy consumption trends

and type of energy uses
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 Development and trend
of CO2 increment

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 450

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Green, M.A., 2019.. Progress
7
in Energy 21 December 2021
 Initiates to reduce CO2

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 Present trend of energy consumption

Ghosh, S.K. and Ghosh, B.K., Fossil Fuel Consumption Trend and
Global Warming Scenario: Energy Overview.
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 Green contributions

@ IEA 2021

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 Current renewable energy
generation trends

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 Energy demand and environment
balance!

Global PV research outcome!

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 @ Fraunhofer ISE

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 Core attention!

Cost Vs
efficiency

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Nayak PK, et al., Adv mat.2011 ; B K ghosh et al.,IJER, 2019 @ Wiley 21 December 2021
 ∗Processing technology Vs
efficiency –Low cost technology

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 Hypothesis and methodology
SCAPS simulation for low cost solar cell

Thin nSi and Ge doped nSiGe as active layer

High electrical and thermal conductive PTAA

as hole transport layer

SiO2 as interface layer as electron reflector and

induced high field effect

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 Wide band absorption scope

Huge absorption

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 Hypothesis and methodology
Device
layout and
schematic

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 nSi and nSiGe active layer thickness effect
on Voc, Jsc, FF and efficiency –without SiO2
nSi (300 K) nSiGe (300 K) nSi (300 K) nSiGe (300 K)
nSi (330 K) nSiGe (330 K) nSi (330 K) nSiGe (330 K)

0.8 6.00E+01

Jsc (mA/cm2)
0.6
4.00E+01
Voc (V)

0.4
2.00E+01
0.2
0 0.00E+00
0.5 0.7 0.9 1 3 5 10 30 50 80 100 0.5 0.7 0.9 1 3 5 10 30 50 80 100
Thickness (µm) Thickness (µm)

nSi (300 K) nSiGe (300 K) nSi (300 K) nSiGe (300 K)

nSi (330 K) nSiGe (330 K) nSi (330 K) nSiGe (330 K)

80.00 8
70.00 7
60.00 6
Fill Factor (%)

Efficiency (%)
50.00 5
40.00 4
30.00 3
20.00 2
10.00 1
0.00 0
0.5 0.7 0.9 1 3 5 10 30 50 80 100 0.5 0.7 0.9 1 3 5 10 30 50 80 100
Thickness (µm) Thickness (µm)

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 SiO2 barrier layer thickness effect on Voc, Jsc, FF
and efficiency – Optimum active layer thickness
n-Si (300 K) n-Si (330 K)
n-Si (300 K) n-Si (330 K)
n-SiGe (300 K) n-SiGe (330 K)
n-SiGe (300 K) n-SiGe (330 K)
0.5 50

Jsc (mA/cm2)
0.48 40
Voc (V)

0.46 30
0.44 20
0.42 10
0
0.4
0.002 0.003 0.004 0.005 0.006
0.002 0.003 0.004 0.005 0.006
Thickness (µm) Thickness (µm)

n-Si (300 K) n-Si (330 K) n-Si (300 K) n-Si (330 K)

n-SiGe (300 K) n-SiGe (330 K) n-SiGe (300 K) n-SiGe (330 K)
14

68 12

Efficiency (%)
66 10
Fill Factor (%)

64 8
62 6
60 4
58 2
56 0
0.002 0.003 0.004 0.005 0.006 0.002 0.003 0.004 0.005 0.006
Thickness (µm) Thickness (µm)

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 nSi and nSiGe active layer thickness effect on Voc,
Jsc, FF and efficiency at optimum 2 nm SiO2
nSi (300 K) nSiGe (300 K) nSi (300 K) nSiGe (300 K)
nSi (330 K) nSiGe (330 K)
nSi (330 K) nSiGe (330 K)
1 6.00E+01
5.00E+01

Jsc (mA/cm2)
0.8
4.00E+01
Voc (V)

0.6
3.00E+01
0.4
2.00E+01
0.2
1.00E+01
0 0.00E+00
0.5 0.7 0.9 1 3 5 10 30 50 80 100 0.5 0.7 0.9 1 3 5 10 30 50 80 100
Thickness (µm) Thickness (µm)

nSi (300 K) nSiGe (300 K) nSi (300 K) nSiGe (300 K)

nSi (330 K) nSiGe (330 K) nSi (330 K) nSiGe (330 K)

80.00 16
70.00 14
60.00 12
Fill Factor (%)

Efficiency (%)
50.00 10
40.00 8
30.00 6
20.00 4
10.00 2
0.00 0
0.5 0.7 0.9 1 3 5 10 30 50 80 100 0.5 0.7 0.9 1 3 5 10 30 50 80 100
Thickness (µm) Thickness (µm)

21 December 2021
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 SiO2 Barrier layer effect on
field development

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 Conclusion
SiO2 as interface layer induces high field effect

nSiGe greater barrier highest prompted higher field and

current density

Least thickness of SiO2 high is suitable for greater field

associated electrical conduction

Less barrier of nSi fill factor variation is least however,

significant fill factor improvement is realized for nSiGe
active layer cell

20 nm p-type organic PTAA - inorganic inverted solar

cell field effect has been analyzed

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 Q&A
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