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20 STERN AVE. TELEPHONE: (973) 376-2922
SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005
U.S.A. (973) 376-8960
BF 245 A AX
BF 245 B
IM-Channel Junction Field-Effect Transistors BF246C
BF 245 A, B, and C are N-channel junction field-effect transistors in plastic package similar
to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF
amplifiers.

2,5max DSG

LI— 12.7 mln -H —r I— —"i

f$b r*~
5,2 max 4,8 max
Approx. weight 0.25 g Dimension* in mm

Maximum ratings
Drain-source voltage ±VDS 30 V
Drain-gate voltage (/s * 0) +VDQ 30 V
Gate-source voltage (/o = 0) -VGS 30 V
Drain current ID 25 mA
Gate current /a 10 mA
Junction temperature 3 150 "C
Storage temperature range Trtg -65 to +160 °C
Total power dissipation (Tamb & 75°C)1) Ptot 300 mW

Thermal resistance
Junction to ambient air "thJA 5260 I K/W1)

Static characteristics (Tj - 25 °C)

Gate cutoff current
-/ess £5 nA
(-VGS " 20 V. vbs - 0, 7, - 1 25'C) -/QSS £500 nA
Gate-source breakdown voltage
'^BfllGSS 230 V
Drain-source short-circuit current
(Vbs=15V,V G s-0) BF245A: /oss 2.0 to 6.5 mA2>
BF245B: /DSS 6to15 mA
BF245C: /OSS 12 to 26 mA
Gate-source voltage
BF245A: -Vfes 0.4 to 2.2 vzi
BF 245 B: -VQS 1.6 to 3.8 V
BF245C: -VQS 3.2 to 7.5 V
Gate-source pinch-off voltage
(V/b s -16V,/D=10nA) -* 0.5 to 8.0 V

Dynamic characteristics (ramb = 25 °C)

Four-pole characteristics
( V b s * 1 6 V , V Q s - 0 , / = 1 kHz) 1X21 s| 3.0 to 6.5 mS
\y22d 25 US
(VDs " 15 V. VQS - 0, f = 200 MHz) 011 250 US
1/2151 8 mS
922s 40 us
(Vos " 20 V, -VQS = 1 V, f - 1 MHz) Ci j. 4.0
C12. 1.1 PF
C22, 1.6 PF
Cutoff frequency of
short-circuit forward transfer admittance1 >

Noise figure
^ 700 MHz

(V D s-1SV.V Q S »0 ( flj-1
f100MH»,r.mb-25l>C) WF 1.6 dB

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