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  • Xiner-Xnf15n60t C379741

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    Imran Aslam
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    This document provides information about the Xiner XNF15N60T 600V, 15A trench field-stop (FS) IGBT. It has features including low saturation voltage, positive temperature coefficient, fast switching, high input impedance, and Pb-free. Its applications include inverters, motor control, and intelligent power modules. Its key electrical characteristics are a 600V collector-emitter breakdown voltage, 1.9-2.3V typical saturation voltage, 4.0-6.5V gate threshold voltage, and a transconductance of 16.5S.

    Original Description:

    igbt datasheet 15n60t

    Original Title

    1912111437_XINER-XNF15N60T_C379741

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    This document provides information about the Xiner XNF15N60T 600V, 15A trench field-stop (FS) IGBT. It has features including low saturation voltage, positive temperature coefficient, fast switching, high input impedance, and Pb-free. Its applications include inverters, motor control, and intelligent power modules. Its key electrical characteristics are a 600V collector-emitter breakdown voltage, 1.9-2.3V typical saturation voltage, 4.0-6.5V gate threshold voltage, and a transconductance of 16.5S.

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    © All Rights Reserved
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    163 views1 page

    Xiner-Xnf15n60t C379741

    Uploaded by

    Imran Aslam
    This document provides information about the Xiner XNF15N60T 600V, 15A trench field-stop (FS) IGBT. It has features including low saturation voltage, positive temperature coefficient, fast switching, high input impedance, and Pb-free. Its applications include inverters, motor control, and intelligent power modules. Its key electrical characteristics are a 600V collector-emitter breakdown voltage, 1.9-2.3V typical saturation voltage, 4.0-6.5V gate threshold voltage, and a transconductance of 16.5S.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
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    of 1

    Xiner XNF15N60T

    600V，15A，Trench-FS IGBT

    Features
     Advanced Trench+FS (Field Stop) IGBT technology
     Low Collector-Emitter Saturation voltage, typical
    data is 1.9V @ 15A.
     Easy parallel switching capability due to positive
    Temperature coefficient in Vce.
     Fast switching
    Schematic Diagram
     High input impedance
     Pb- Free product

    Applications
     General general-purpose inverter
    TO-220F
     Motor control
     Intelligent power module.

    Electrical characteristics(TJ = 25°C unless otherwise noted)

    Symbol Parameter Test conditions Units Min. Typ. Max.


    Collector - Emitter breakdown
    V(BR)CES VGE = 0V, ID =250uA V 600 — —
    voltage
    VGE=15V,
    V — 1.9 2.3
    Collector-Emitter Saturation IC=15A,TC=25°C
    VCE(sat)
    voltage VGE=15V,
    V — 2.2 —
    IC=15A,TC=125°C
    VGE= VCE,
    VGE(th) Gate threshold voltage V 4.0 5.2 6.5
    Ic = 0.25mA

    Vf Diode forward voltage If=15A V — 1.9 2.5

    Gate to Emitter Forward


    IGES Vge=+30V — — 200
    Leakage
    nA
    Gate to Emitter reverse
    IGESR Vge=-30V -200 — —
    Leakage
    Zero gate voltage collector
    ICES VCE =600V uA — — 25
    current

    gfs Transconductance Vce=50V, Ic=15A S — 16.5 —

    Shenzhen Invsemi Co., Ltd

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