TSP50N06M / TSF50N06M

60V N-Channel MOSFET

General Description Features

This Power MOSFET is produced using Truesemi‘s • 50A, 60V, RDS(on) = 0.023Ω @VGS = 10 V
advanced planar stripe DMOS technology. • Low gate charge ( typical 33nC)
This advanced technology has been especially tailored to • Fast switching
minimize on-state resistance, provide superior switching • 100% avalanche tested
performance, and withstand high energy pulse in the • Improved dv/dt capability
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.

{
D

◀ ▲
{G ●
●

TO-220 GD S
TO-220F
G DS
{S

Absolute Maximum Ratings TC = 25°Cunless otherwise noted

Symbol Parameter TSP50N06M TSF50N06M Units

VDSS Drain-Source Voltage 60 V
ID Drain Current - Continuous (TC = 25°C) 50 50* A
- Continuous (TC = 100°C) 30 30* A
IDM Drain Current - Pulsed (Note 1) 200 200* A
VGSS Gate-Source Voltage ± 20 V
EAS Single Pulsed Avalanche Energy (Note 2) 535 mJ
EAR Repetitive Avalanche Energy (Note 1) 12 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 120 47 W
- Derate above 25°C 0.8 0.31 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol Parameter TSP50N06M TSF50N06M Units
RθJC Thermal Resistance, Junction-to-Case 1.24 3.22 °C/W
RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
TSP50N06M / TSF50N06M
Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 60 V, VGS = 0 V -- -- 1 µA
Zero Gate Voltage Drain Current
VDS = 48 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 25 A -- 0.019 0.023 Ω
On-Resistance

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 1100 -- pF
Coss Output Capacitance f = 1.0 MHz -- 450 -- pF
Crss Reverse Transfer Capacitance -- 60 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 20 -- ns
VDD = 250 V, ID = 25A,
tr Turn-On Rise Time -- 100 -- ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 50 -- ns
(Note 4, 5)
tf Turn-Off Fall Time -- 55 -- ns
Qg Total Gate Charge VDS = 48 V, ID = 50 A, -- 33 - nC
Qgs Gate-Source Charge VGS = 10 V -- 8 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 12 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 200 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 50 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 50 A, -- 50 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs (Note 4) -- 70 -- µC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 250 uH, IAS = 50.0 A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 50.0 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Typical Characteristics

VGS
Top : 15.0 V
2 10.0 V 2
10 10
8.0 V
7.0 V
6.0 V
5.5 V

ID, Drain Current [A]

5.0 V
ID, Drain Current [A]

Bottom : 4.5 V

1
10 1
10

175℃

25℃
※ Notes :
※ Note :
1. 250µs Pulse Test 1. VDS = 30V
2. TC = 25℃ -55℃ 2. 250µ s Pulse Test
0
10 0
10
-1 0 1 2 4 6 8 10
10 10 10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

0.05
Drain-Source On-Resistance

2
10
0.04
IDR, Reverse Drain Current [A]

VGS = 10V
R DS(O N) [ Ω ],

0.03
VGS = 20V

1
0.02 10

0.01
※ Notes :
175℃ 25℃ 1. VGS = 0V
※ Note : TJ = 25℃
2. 250µs Pulse Test
0.00
0 50 100 150 200 10
0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

ID, Drain Current [A]
VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature

3500 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
3000 Crss = Cgd
10 VDS = 30V
VGS, Gate-Source Voltage [V]

2500 VDS = 48V

Coss 8
Capacitance [pF]

2000 ※ Notes :
1. VGS = 0 V
Ciss
2. f = 1 MHz 6
1500

4
1000
Crss

500 2
※ Note : ID = 50A

0 0
-1 0 1
10 10 10 0 5 10 15 20 25 30 35

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Typical Characteristics (Continued)

1.2 2.5
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.0
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
1.5

1.0
1.0

0.9 ※Notes :
1. VGS = 0 V 0.5 ※ Notes :
2. ID = 250 µA 1. VGS = 10 V
2. ID = 25.0 A

0.0
0.8 -100 -50 0 50 100 150 200
-100 -50 0 50 100 150 200
o
o TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

10
3 60

Operation in This Area

is Limited by R DS(on) 50
ID, Drain Current [A]
ID, Drain Current [A]

2 100µ s 40
10
1 ms
10 ms 30
DC

10
1
20

※ Notes :
o
1. TC = 25 C 10
o
2. TJ = 175 C
3. Single Pulse
0
10 0
10
-1
10
0
10
1 2
10 25 50 75 100 125 150 175

VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
for TSP50N06 vs. Case Temperature

0
10

D = 0 .5
Zθ JC(t), Thermal Response

0 .2 ※ N o te s :
1 . Z θ J C( t) = 1 .2 4 ℃ /W M a x .
0 .1 2 . D u ty F a c to r , D = t 1 /t 2
-1
3 . T J M - T C = P D M * Z θ J C( t)
10
0 .0 5
PDM
0 .0 2
t1
0 .0 1 t2
s in g le p u ls e

-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ]

Figure 11. Transient Thermal Response Curve

for TSP50N06
 Gate Charge Test Circuit & Waveform

VGS
SameType
50KΩ
asDUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

R
L V
DS
V
DS 9
0%

V V
DD
GS
R
G

1
0%
V
GS
1
0V D
UT
td
(on
)
tr td
(off) tf
to
n
to
ff

Unclamped Inductive Switching Test Circuit & Waveforms

L B V
1 DS S
V E
AS=---- LIAS2 --------------------
DS 2 B V DS S-V DD

B
VD SS
ID
IAS
R
G
V
DD ID(t)

1
0V D
UT V
DD V
DS(t)

tp
tp Tim
e
 Peak Diode Recovery dv/dt Test Circuit & Waveforms

D U T +

V D S

I S D
L

D r iv e r
R G
S am e T ype
as D U T V D D

V G S • d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d

G a te P u ls e W id th
V GS D = --------------------------
G a t e P u ls e P e r io d 10V
( D r iv e r )

IF M , B o d y D io d e F o r w a r d C u r r e n t
I S D
( D U T ) d i/d t

IR M

B o d y D io d e R e v e r s e C u r r e n t
V DS
( D U T ) B o d y D io d e R e c o v e r y d v / d t

V S D
V D D

B o d y D io d e
F o r w a r d V o lt a g e D r o p