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Internal Memory 3rd
Internal Memory 3rd
Read-only
Masks
memory (ROM) Read-only
Not possible
memory
Programmable
ROM (PROM)
Electrically
Electrically Read-mostly
Electrically, byte-
Erasable PROM memory
level
(EEPROM)
Electrically, block-
Flash memory
level
Random Access Memory (RAM)
• The most common is referred to as random-access
memory (RAM).
• State 1:
▫ C1 high, C2 low
▫ T1 T4 off, T2 T3 on
• State 0:
▫ C2 high, C1 low
▫ T2 T3 off, T1 T4 on
• Hard Failure.
▫ Permanent defect.
• Soft Error
▫ Random, non-destructive.
▫ No permanent damage to memory.
• Detected using Hamming error correcting code.
Error Correcting Code Function
(Read(
(Write(
new code
M+K
old code bits
• Codes that operate in this fashion are referred to as error-
correcting codes.
• The bus includes 18 data lines (16 actual data, two parity)
cycling at twice the clock rate.