FQP10N60-FQPF10N60

600V,10A N-Channel MOSFET

General Description Product Summary

The FQP10N60 & FQPF10N60 are fabricated using an VDS @ Tj,max 700V
advanced high voltage MOSFET process that is designed IDM 40A
to deliver high levels of performance and robustness in RDS(ON),max < 0.7Ω
popular AC-DC applications.By providing low RDS(on), Ciss
Qg,typ 23nC
and Crss along with guaranteed avalanche capability these
Eoss @ 400V 3.4µJ
parts can be adopted quickly into new and existing offline
power supply designs.

100% UIS Tested

100% Rg Tested

Top View
TO-220 TO-220F D

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol FQP10N60 FQB10N60 FQPF10N60 Units
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±30 V
Continuous Drain TC=25°C 10 10* 10*
ID
Current TC=100°C 6.6 6.6* 6.6* A
C
Pulsed Drain Current IDM 40
Avalanche Current C,J IAR 10 A
C,J
Repetitive avalanche energy EAR 50 mJ
Single pulsed avalanche energy G EAS 480 mJ
MOSFET dv/dt ruggedness 50
dv/dt V/ns
Peak diode recovery dv/dt 5
TC=25°C 208 43 32 W
PD
Power Dissipation B o
Derate above 25 C 1.7 0.34 0.26 W/ C
o

Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds TL 300 °C
Thermal Characteristics
Parameter Symbol FQP10N60 FQB10N60 FQPF10N60 Units
Maximum Junction-to-Ambient A,D RθJA 65 65 65 °C/W
Maximum Case-to-sink A RθCS 0.5 -- -- °C/W
Maximum Junction-to-Case RθJC 0.6 2.9 3.9 °C/W
* Drain current limited by maximum junction temperature.

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Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C 600
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=150°C 700 V
BVDSS Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V 0.55 V/ oC
/∆TJ
VDS=600V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
VDS=480V, TJ=125°C 10
IGSS Gate-Body leakage current VDS=0V, VGS=±30V ±100 nΑ
VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA 3 4 5 V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A 0.6 0.7 Ω
gFS Forward Transconductance VDS=40V, ID=5A 9 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 V
IS Maximum Body-Diode Continuous Current 10 A
ISM Maximum Body-Diode Pulsed Current C 40 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1346 pF
VGS=0V, VDS=100V, f=1MHz
Coss Output Capacitance 54 pF
Effective output capacitance, energy
Co(er) 40 pF
related H
VGS=0V, VDS=0 to 480V, f=1MHz
Effective output capacitance, time
Co(tr) 72 pF
related I
Crss Reverse Transfer Capacitance VGS=0V, VDS=100V, f=1MHz 10 pF
Rg Gate resistance f=1MHz 3.8 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 23 35 nC
Qgs Gate Source Charge VGS=10V, VDS=480V, ID=10A 6.9 nC
Qgd Gate Drain Charge 6.7 nC
tD(on) Turn-On DelayTime 37 ns
tr Turn-On Rise Time VGS=10V, VDS=300V, ID=10A, 60 ns
tD(off) Turn-Off DelayTime RG=25Ω 53 ns
tf Turn-Off Fall Time 35 ns
trr Body Diode Reverse Recovery Time IF=10A,dI/dt=100A/µs,VDS=100V 477 ns
Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V 6.7 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4A, VDD=150V, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. L=1.0mH, VDD=150V, RG=25Ω, Starting TJ=25°C.

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20 100

10V VDS=40V -55°C

16
7V
10
12
ID (A)

6.5V

ID(A)
8 125°C
1
6V
4 25°C
VGS=5.5V

0 0.1
0 5 10 15 20 25 30 2 4 6 8 10
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

2.0 3

Normalized On-Resistance
2.5
1.6
VGS=10V
2
ID=5A
RDS(ON) (Ω)

VGS=10V
1.2
1.5

0.8 1

0.5
0.4

0
0.0 -100 -50 0 50 100 150 200
0 5 10 15 20 25
Temperature (°C)
ID (A) Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage

1.2 1E+02

1E+01
BVDSS (Normalized)

1.1
1E+00
40 125°C
IS (A)

1
1E-01

25°C
1E-02
0.9

1E-03
0.8
-100 -50 0 50 100 150 200 1E-04
0.0 0.2 0.4 0.6 0.8 1.0
TJ (°C)
Figure 5:Break Down vs. Junction Temparature VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 10000

VDS=480V Ciss
12 ID=10A
1000

Capacitance (pF)
VGS (Volts)

9
100 Coss
6
Crss
10
3

0 1
0 8 16 24 32 40 0.1 1 10 100 1000
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

10 15

8 Current rating ID(A) 12

6 9
Eoss(uJ)

Eoss
4 6

2 3

0 0
0 100 200 300 400 500 600 0 25 50 75 100 125 150

VDS (Volts) TCASE (°C)

Figure 9: Coss stored Energy Figure 10: Current De-rating (Note B)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100

10µs 10µs
RDS(ON) RDS(ON)
10 limited 10 limited
100µs 100µs
ID (Amps)

ID (Amps)
1 DC 1ms 1 1ms

10ms 10ms
DC
0.1s
0.1 0.1
1s
TJ(Max)=150°C TJ(Max)=150°C
TC=25°C TC=25°C
0.01 0.01
1 10 100 1000 1 10 100 1000
VDS (Volts) VDS (Volts)
Figure 11: Maximum Forward Biased Safe Figure 12: Maximum Forward Biased Safe
Operating Area for AOT10T60 (Note F) Operating Area for AOTF10T60 (Note F)

100

10µs
RDS(ON)
10 limited
100µs
ID (Amps)

1 1ms

10ms
DC
0.1s
0.1
1s
TJ(Max)=150°C
TC=25°C
0.01
1 10 100 1000
VDS (Volts)
Figure 13: Maximum Forward Biased Safe
Operating Area for AOTF10T60L (Note F)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC
ZθJC Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RθJC=0.6°C/W
Thermal Resistance

0.1
PD
Single Pulse
0.01
Ton
T

0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 14: Normalized Maximum Transient Thermal Impedance for AOT10T60 (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC
ZθJC Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RθJC=2.9°C/W
Thermal Resistance

0.1
PD

0.01 Single Pulse

Ton
T

0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF10T60 (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC
ZθJC Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RθJC=3.9°C/W
Thermal Resistance

0.1
PD

0.01 Single Pulse Ton

T

0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance for AOTF10T60L (Note F)

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 Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ IRM
Vgs Vdd
VDC
Vdd
Ig
- Vds

Page 7 of 7