jesolonOAss2iKiiTRAOUAKCREN RIOT DCI MTTA EM b * & Coven @) +28 Ci + If a forward bias V, > 0 is applied to the structure (+ ve on the metal side, and = ve on the semiconductor side) the potential barrier on the semiconductor side is decreased from V, to V\- V., * A-greater number of electrons can, therefore, flow fram the semiconductor into the metal. * On the other hand, the flow of electrons from the metal inte the semiconductor, |,.. femains constant because the potential barrier seen from the metal side, ®, is unchanged. As a result, a net electron current flow from the semiconducter into the metal is observed. aSchottky effect * The height of the potential barrier.on the metal side, is not exactly constant and is slightly affected by the applied voltage. An actual lowering of , is observed. It is due to a mirror charge produced in the metal by electrons in the semiconductor, When a charge is near a "perfect" condy2tor (metal) a mirror charge of same magnitude but opposite sign is created inside the conductor, ata depth equal te the distance between the initial charge and the conductor surface + Asa consequence, the charge is attracted by the metal,se jo 420i MDOMAROSCRZONLAK2OT Con ORO DS Fee SW sant pares ‘The height of the potential barrier on the metal side, is not exactly constant and is slightly affected by the applied voltage. An actual lowering of ®, is observed. It is due to a mirror charge produced in the metal by electrons in the semiconductor. When a charge is near a “perfect” conductor (metal) a mirror charge of same magnitude but opposite sign is created inside the conductor, at a depth equal to the distance between the initial charge and the conductor surface As a consequence, the charge is attracted by the metal, and in the case of the metal-semiconductor contact, the potential barrier is lowered. eee* The attraction exerted by the metal on an electron can be calculated as follows. Assuming the distance between the electron and the metal surface is x, the mirror charge bearing a charge +q is located at a distance -x inside the metal. + Therefore, the Coulomb attradion force between the two charges is equal to ee lone,THe Vin ~ oe * Assuming the distance between the electron and the metal surface is x, the mirror charge bearing a charge +q is located at a distance -x inside the metal. + Therefore, the Coulomb attraction force between the two charges is equal to T6ME ox? e Schottky expressions + The Electric field eSchottky expressions The Electric field The resulting potential energy of the electron is equal to 2 «q? Pix) =~ qV(x) = | -—— ak = 16MEggx? LORE ox The magnitude of the potential barrier lowering, which constitutes the Schottky effect Ng ar ec3 AD) = Wee Ved The resulting potential barrier height is equal to: Ph > ®p- 4%,OO RAS HS! DF * ===> @ Fle GaheeutmvOonon a 2 Tw yess oe Bon © + The resulting potential barrier height is equal to: Pp = Mp - Ady Schottky E-shifting devices thee interface state density ix moderate, such that the ‘ofthe potential barrier is somewhere between gp = Eg - gq tnd 9% = 49m ~ 1% Tnterfige statesIn actual devices the interface state density is moderate, such that the height of the potential bamer is somewhere between g@p = dy - gy sic ghy = Gm ~ 9% niet semicundactorAthen Desde BAIONIANY DU/TAROMAROSCHLANL ZONES Metal SC junction: Ohmic & Non-Ohmic Ce A potential barrier is formed when a metal and a ‘semiconductor are brought in contact just like in the case of p-n junction Current flow over stich barrier in_one direction and blocked in other direction -> rectifier in nature (Scholtky Barrier), Resistance is high in one direction But Taw mn-other direction ifthe ‘SC jn is non r¢ jing ‘.e. resistivity is same in both direction, itis called an ohmic contact. Current flow is same in both direction Nady ee Charge carriers do not face any potential barrier in either directionOhmic contact * An ohmic contact is a non-rectifying contact. * The current-voltage characteristics of the contact should obey Ohm's law V=/R and the resistance of the contactShould be as low as possible. + At the contact between the metal and the semiconductor Fermi levels on either sides are alignedbefore contact after contact* In this particular example E-y> Ey such that the energy bands of the N-type semicondiictor are bent downwards near the contact. 2 + The magnitude of the band bending and its extension into the semiconductor are very small. + Asa tesult there is virtually no potential b the metal and the semiconductor and eles freely through the contact. Such a contact is ohmic.Itis also possible to obtain an ohmic contact between a metal and a semiconductor that would a priori form a Schottky diode, stich as. a metal where E,, < E+ In practice a Schottky contact behaves as an ahmic contact if the impurity concentration in the semiconductor is high enough (e.g. Ny = 10% ems) The width of the depletion region in the semiconductor is given by Expression Wit AY ois HadP-N vs M-SC Junctions Width of the depletion region (Schottky diode) _ wi = oe -sottage characteristics (PN junction and Schottky, Current. [PN junction diode - (at ee 1 (em (Si Schonky diode Pha) Vy } I-A Pep [24 Le (&)-*] ee 1aulen()-1 1]