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  • Lecture 6.4 Channel Length Modulation & PunchThrough

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    Debdatta Praharaj
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    This document discusses channel length modulation in n-channel MOSFETs operating in saturation mode and how it affects the transistor's I-V characteristics. It also covers punch through, which occurs when the depletion regions of the source and drain extend and merge under certain biases, and hot-carrier degradation, where high electric fields cause carriers to gain enough energy to damage the transistor.

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    This document discusses channel length modulation in n-channel MOSFETs operating in saturation mode and how it affects the transistor's I-V characteristics. It also covers punch through, which occurs when the depletion regions of the source and drain extend and merge under certain biases, and hot-carrier degradation, where high electric fields cause carriers to gain enough energy to damage the transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    12 views9 pages

    Lecture 6.4 Channel Length Modulation & PunchThrough

    Uploaded by

    Debdatta Praharaj
    This document discusses channel length modulation in n-channel MOSFETs operating in saturation mode and how it affects the transistor's I-V characteristics. It also covers punch through, which occurs when the depletion regions of the source and drain extend and merge under certain biases, and hot-carrier degradation, where high electric fields cause carriers to gain enough energy to damage the transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    of 9

    Channel Length

    Modulation &
    PunchThrough
    Lecture 6.4

    Dr. Gargi Raina VIT Chennai


    Channel Length Modulation

    Dr. Gargi Raina VIT Chennai


    Channel Length Modulation

    Channel length
    modulation in an
    n-channel MOSFET
    operation in
    saturation mode.

    It can be shown that

    Dr. Gargi Raina VIT Chennai


    I-V characteristics of an
    n-channel MOS
    transistor, including the
    channel length
    modulation effect.

    Dr. Gargi Raina VIT Chennai


    Punch Through &
    Hot-carrier degradation

    Dr. Gargi Raina VIT Chennai


    Dr. Gargi Raina VIT Chennai
    Dr. Gargi Raina VIT Chennai
    Dr. Gargi Raina VIT Chennai
    Dr. Gargi Raina VIT Chennai

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